• 제목/요약/키워드: Sb2O3

검색결과 457건 처리시간 0.028초

Pb(Sn1/2Sb1/2)O3-PZT계 세라믹스의 초전특성 (Pyroelectric Properties on Pb(Sn1/2Sb1/2)O3 Modified PZT Ceramics)

  • 정형진;손정호;윤상옥;김현재
    • 한국세라믹학회지
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    • 제26권6호
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    • pp.755-762
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    • 1989
  • A pyroelectric ceramic material based on Pb(Sn1/2Sb1/2)O3 modified PZT system is studied as a function of the amount of Pb(Sn1/2Sb1/2)O3 and PbTiO3. With increasing the Pb(Sn1/2Sb1/2)O3 amount the dielectric constant increases up to 10mol% and then decreases, but the pyroelectric coefficient decreases and as the PbTiO3 contents increase in the 10mol% added PZT system, the dielectric constant increases but the infrared sensitivity decreases. The good pyroelectric material has low dielectric constant and no pyrochlore phase, but does not depend in the amount of remanent dipole, and its composition sites around ferroelectric-to-antiferroelectric phase boundary.

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Cr을 첨가한 ZnO-Bi2O3-Sb2O3계의 소결과 전기적 특성 (Sintering and Electrical Properties of Cr-doped ZnO-Bi2O3-Sb2O3)

  • 홍연우;신효순;여동훈;김진호
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.942-948
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    • 2010
  • In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

ZnO-Bi2O3-Sb2O3 세라믹스의 전기적 특성 (Electrical Properties of ZnO-Bi2O3-Sb2O3 Ceramics)

  • 홍연우;신효순;어동훈;김종희;김진호
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.738-748
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    • 2008
  • In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

ZnO 바리스터의 하소과정에서 $Sb_2O_3$의 거동 (Behavior of $Sb_2O_3$ in the Calcination Process of ZnO Varistor)

  • 최진석;마재평;백수현
    • 대한전자공학회논문지
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    • 제24권3호
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    • pp.433-438
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    • 1987
  • The current-voltage characteristics of the ZnO varisor with and without Sb2O3 which were fabricated with the various calcination and sintering temperature were discussed by comparing the results of SEM-microstructures and X-ray diffraction analysis. The samples were calcined at the temperature up to 800\ulcorner for 2 hours and they were sintered at 1200-1300\ulcorner for 1 hour. Then, we applied the power up to dc 200 volt to the samples and measured the output current up to 100mA. The samples without Sb2O3 had lower nonlinear resistances at the all calcination and sintering temperatures due to the large grains because of not forming Spinel phase. The other samples contained Sb2O3 could form Pyrochlore and Spinel phases at the all calcination temperatures by X-ray diffraction phase analysis. We found that the Spinel phases which were formed at the calcination process inhibit growth of ZnO grain and give rise to the change of nonlinear resistances by SEM-microstructures. And we found that the base of ZnO grain growth control is strongly dependent on the behavior of Sb2O3 in calcination process.

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다양한 첨가물에 의한 고전압 ZnO 바리스터의 미세구조 (Microstructure of High Voltage ZnO Varistors by Various Addition.)

  • 오수홍;기현철;장동환;홍경진;김태성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.185-189
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    • 2000
  • ZnO varistor has many merits as compared with SiC varistor. But, because of leakage current and non-linear coefficient, it has unstable function properties. For the purpose of improvement of ZnO varistor properties, ZnO varistor is studied according to sintering condition and mixing condition. ZnO varistor, $ZnO-Bi_2O_2-Y_2O_3-MnO-Cr_2O_3-Sb_2O_3$ series, is fabricated with $Sb_2O_3$ mol ratio(0.5-4[mol%]) and sintered at $1250[^{\circ}C]$ In accordance with $Sb_2O_3$ mol ratio and sintering temperature, grain size and non-linear coefficient are measured. The specimen, $Sb_2O_3$ mol ratio is 1[mol%], has small grain size. It has best properties because of its liquid phase shape. When $Sb_2O_3$ mol ratio is 1[mol%], grain size is decreased.

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용융(熔融) Bi-Pb-Sb계(系) 합급(合金)의 산화(酸化)에 의한 Sb과 Pb 제거(除去) (The Selective Removal of Sb and Pb from Molten Bi-Pb-Sb Alloy by Oxidation)

  • 김세종;손인준;손호상
    • 자원리싸이클링
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    • 제21권4호
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    • pp.53-59
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    • 2012
  • 본 연구에서는 비철제련의 공정 부산물에서 얻어진 Bi-Pb-Sb 3원계 합금 용탕의 산화반응에 따른 Sb과 Pb의 제거거동에 대하여 조사하였다. $N_2+O_2$ 가스를 침지 노즐을 통해 1173 K의 합금 용탕 중에 취입하여 Sb을 산화물과 금속상의 혼합물로 분리 회수할 수 있었다. 그리고 923 K의 Bi-Pb 2원계 용탕에 $N_2+O_2$ 가스를 취입하면 Pb가 산화되어 슬래그상으로 제거될 수 있으나, Bi도 동시에 산화되어 Bi를 정제할 수 없었다.

Effects of Sb-Incorporation on the 2223 Phase in the Superconducting Bi-Pb-Sr-Ca-Cu-O System

  • Seong Han Kim;Dong Hoon Lee;Jong Sik Park;Seung Koo Cho;Sung Han Lee;Keu Hong Kim
    • Bulletin of the Korean Chemical Society
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    • 제15권2호
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    • pp.115-118
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    • 1994
  • Samples of ($Bi_{2-x}Sb_x)PbSr_2Ca_2Cu_3O_y$, compositions with x=0.0, 0.1, and 0.2 were prepared by solid-state reaction. The solubility of Sb into the 2223 phase is lower than 0.05 for the ratio of Sb/Bi. The lack of stability of the Sb-substituted $Bi_2O_2$ double layers is likely to cause the solubility low. There is no great dependence of lattice parameters on the Sb-content, and bonds around the square-pyramidal Cu atom are not affected by the $Sb^{3+}$ ion substituted. The superconducting transition temperature of this system is decreased gradually with increase of Sb, which is tentatively attributable to the perturbation of the Bi 6p-O 2p band and/or to the low volume fraction of the 2223 phase.

$SiO_2$ barrier에 따른 $SnO_2$ : Sb 투명전도막의 특성고찰 (Properties Evaluation of $SnO_2$ : Sb transparent conductive films by $SiO_2$ barrier)

  • 김범석;김창열;임태영;오근호
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.190-190
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    • 2003
  • 여러원소 (Sb, F 등)를 도핑한 SnO$_2$ 투명전도막은 여러 가지 훌륭한 특성으로 Solar cell, heat mirrors, gas sensors, liquid crystal displays, thick film resistor 등과 같이 넓은 범위에서 응용되고 있다. 본 연구에서는 Sb 도핑된 Tin Oxide films이 Sol-gel dip coating법에 의해 준비되었다. SnO$_2$:Sb 용액은 SnC1$_2$ 와 SbC1$_3$ Power를 알코올에 용해하여 Ethylene glycol 와 Citric acid를 첨가하여 합성하였다. 막의 상형성은 XRD와 SEM(Scanning electron microscope)에 의해서 분석되었으며, 특성분석은 투과율(UV/VIS Spectrophotometer)과 표면전기저항(four point probe)으로 분석되었다. SiO$_2$ barrier이 SnO$_2$:Sb 막의 특성에 미치는 영향을 확인하기 위하여 XPS(X-ray photoelectron spectroscopy) 분석이 적용되었다.

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$Sb_2O_3$와 ZnO를 첨가한 Barium Titanate의 유전성 (Dielectric Properties of Barium Titanate with $Sb_2O_3$ and ZnO)

  • 윤기현;김종우;송효일
    • 한국세라믹학회지
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    • 제21권2호
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    • pp.121-126
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    • 1984
  • The dielectric properties of $BaTiO_3$ containing 0~0.3mol% and ZnO respectively as additives were investigated as a function of temperature from $25^{\circ}C$ to 14$0^{\circ}C$ and frequency from 24 KHz to 15MHz. The density of sintered $BaTiO_3$ was increased with addition of increasing to 0.15mol% amounts of $Sb_2O_3$ and the dielectric constant was also increased. This is due to space charge polarization with Ba vacancies. Above 0.15mol% $Sb_2O_3$ the density was decreased and the dielectric constant was also decreased due to occuring the discharge through voids. The density of sintered $BaTiO_3$ was decreased with addition of increasing to 0.15mol% amounts of ZnO and the dielectric constant was decreased due to occuring the discharge through voids. Above 0.15mol% ZnO the density was increased and the dielectric constant was also increased.

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Crystal Structure of Pentapotassium Disodium Hexatungstoantimonate(V) Dodecahydrate, $K_5Na_2[SbW_6O_{24}]\cdot12H_2O$

  • Lee, Uk;Sasaki, Yukiyoshi
    • Bulletin of the Korean Chemical Society
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    • 제8권1호
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    • pp.1-3
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    • 1987
  • The crystal structure of $K_5Na_2[SbW_6O_{24}]{\cdot}12H_2O$ has been determined. Final R = 0.081 for 890 observed independent reflections collected by diffractometry. Crystal data as follows; trigonal, space group R3m, a = 9.794(1) ${\AA},\;{\alpha}$ = 84.72$(1)^{\circ}$, Z = 1. The heteropolyanion has a structure with point symmetry $D_{3d}$ (3m), of the ideal Anderson-type heteropolyanion. The Sb-W and W-W distances are 3.259(2) and 3.259(3) ${\AA}$. Three types of W-O ($W-O_t,\;W-O_b\;and\;W-O_c$) distances are 1.73(2), 1.95(4) and 2.20(3) ${\AA}$. The Sb-O distance is 1.97(3) ${\AA}$.