• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.143-144
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• 2007

낮은 포논 에너지를 가지는 대표적인 비정질 광소재인 Ge-Ga-Sb-Se 조성의 셀레나이드 유리에 CsI를 첨가한 찰코할라이드 유리 샘플을 제작하고 CsI 함량에 따른 소재의 광 특성 및 첨가된 $Pr^{3+}$ 이온의 광 특성 변화를 조사하였다. 안정한 비정질 상태를 유지하는 CsI의 함량은 약 7.5 몰%로 제한되었으며, 첨가량에 비례하여 단파장 흡수단 파장이 짧아지는 경향을 보였으나 weak absorption tail이 증가 하였다. $Pr^{3+}$ 이온으로부터 발생하는 1.6 ${\mu}m$대역 형광의 제반특성은 CsI의 첨가와 비교적 무관한 것으로 밝혀졌으며 1.06 ${\mu}m$장에서 측정한 비선형 흡수 계수 역시 CsI의 첨가에 영향을 거의 받지 않는 것으로 판명되었다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1287-1288
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• 2008

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.183-191
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• 1996

For the fabrication of semiconducting BaTiO3 ceramics at lower sintering temperature BN was selected as a sintering aid and the microsturcture of semiconducting BaTiO3 ceramics and PTCR characteristics by their microstructural changes were investigated. by adding BN to 0.1 mol% Sb2O3-doped BaTiO3 ceramics the sintering temperature showing semiconducting BaTiO3 ceramics was reduced by 16$0^{\circ}C$ from 130$0^{\circ}C$ to 114$0^{\circ}C$ and the specific resistivity ratio was increased as the amount of BN was increased.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.454-456
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• 2009

N-Type $SbI_3$ doped $95%Bi_2Te_3+5%\;Bi_2Se_3$ compounds were newly fabricated by the combination of gas atomization process and Magnetic Pulsed Compaction process. The thermoelectric properties of the MPCed bulks according to consolidation temperatures were investigated by a combination of microscopy, XRD and thermoelectric property testing. The microstructure of MPCed bulk shows homogeneous and fine distribution through consolidated bulks due to the high solidification of compound powders. The research presented the challenges toward the successful consolidation of thermoelectric powder using magnetic pulsed compaction (MPC) and analysis of thermoelectric properties of the consolidated bulks.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.83-88
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• 1996

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.459-460
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• 2006

N-type $Bi_2Te_3-Sb_2Te_3$ solid solutions doped with 1$CdCl_2$ was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from $400^{\circ}C$ to $500^{\circ}C$, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of $3.88Kgf/mm^2$. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at $500^{\circ}C$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.525-527
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• 2008

N-Type $SbI_3$-doped $95%{Bi_2}{Te_3}-5%{Bi_2}{Se_3}$ compounds were prepared by a gas atomization and Magnetic Pulsed Compaction process. The dynamic recrystallization and thermoelectric properties of the MPCed bulks with consolidation temperatures and times were investigated by a combination of microscopy, XRD and thermoelectric property testing. The microstructure of MPCed bulk shows homogeneous and fine distribution through consolidated bulks due to dynamic recrystallization during hot MPC. This research presented the challenges toward the successful consolidation of thermoelectric powder using magnetic pulsed compaction (MPC).

• Bulletin of the Korean Chemical Society
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• v.10 no.1
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• pp.30-32
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• 1989

Traces of nine elements, gold, arsenic, cobalt, chromium, copper, europium, hafnium, sodium and antimony in commercially available silicon crystals were determined by the instrumental neutron activation analysis using the single comparator method. The values of the concentrations of these elements in both single and polycrystals were found to decrease significantly to a low limiting level by simply washing and etching surface contaminants having been introduced during various steps of sample preparation and irradiation. However, the chromium levels in polycrystals were not easily decreased, these depending upon the cutting tools employed. The Sb-doped content in each semiconductor has been compared with the associated quantities such as the concentration and the conductivity range given by the sample donor. Uncertainty in the sodium analysis due to the fission neutron reaction by silicon itself was discussed.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.418-427
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• 1997

The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_3＋0.84PbZroO_3＋0.4Wt%MnO_2$ (=0.05PSS ＋0.11PT＋0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS＋0.11PT＋0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.