• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.126-127
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• 2007

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.647-651
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• 2006

A new class of compounds in the form of skutterudite structure, Fe doped $CoSb_3$ with a nominal composition of $Fe_xCo_{4-x}Sb_{12}$ ($0{\leq}x{\leq}2.5$), were synthesized by mechanical alloying of elemental powders followed by vacuum hot pressing. Nanostructured, single-phase skutterudites were successfully produced by vacuum hot pressing using as-milled powders without subsequent heat-treatments for the compositions of $x{\leq}1.5$. However, second phase was found to form in case of $x{\geq}2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties including thermal conductivity from 300 to 600 K were measured and discussed. Lattice thermal conductivity was greatly reduced by introducing a dopant up to x=1.5 as well as by increasing phonon scattering in nanostructured skutterudite, leading to enhancement in the thermoelectric figure of merit. The maximum figure of merit was found to be 0.32 at 600 K in the composition of $Fe_xCo_{4-x}Sb_{12}$.

• Advances in nano research
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• v.13 no.6
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• pp.513-525
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• 2022

In this study, it was aimed to evaluate direct oxidation of aqueous solution containing cefalexin antibiotic with new generation Sn/Sb/Ni: 500/8/1 anode. The fact that there is no such a study on treatment of cefalexin with these new anode made this study unique. According to the operating parameters evaluation COD graphs showed clearer results compared to TOC and CLX and thus, it was it was chosen as major parameter. Furthermore, pseudo-first degree kd values were calculated from CLX results to show more accurate and specific results. Experimental results showed that after 60 min of electrochemical oxidation, complete removal of COD and TOC was accomplished with 750 mg L^-1 KCl, at pH 7, 50 mA cm^-2 current density and 1 cm anode-cathode distance. Also, the stability of the Sn/Sb/Ni anode was evaluated by taking SEM and AFM images and XRD analysis before and after of electrochemical oxidation processes. According to the results, it was not occurred too much change on the anode surface even after 300 h of electrolysis. Thus, it was thought that the anode material was not corroded to a large extent. Furthermore, the removal efficiencies were very high for almost all the time and conditions. According to the results of the study, electrochemical oxidation with new generation Sn/Sb/Ni anodes for the removal of cefalexin antibiotic was found very successful and applicable due to require less reaction time complete mineralization and doesn't require pH adjustment step compared to other studies in literature. In future studies, different antibiotic types should be studied with this anode and maybe with real wastewaters to test applicability of the process in treatment of pharmaceutical wastewaters containing antibiotics, in a better way.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.307-310
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Solar Energy
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• v.18 no.2
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• pp.137-144
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• 1998

Tin oxide films deposited by spray pyrolysis have defects and preferred orientations according to the temperature of substrate. The growth of crystalline deposits began at the substrate temperature of $300^{\circ}C$. With increasing substrate temperature the plane (200) groved preferentially and above $400^{\circ}C$, planes of higher indices. Grain size increased with increasing substrate temperature up to $400^{\circ}C$. Undoped film is composed of Sn and O, and contains oxygen vacancies. Film doped with antimony has defects such as oxygen vacancies, antimony substituted on Sn and chlorine on oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.205-209
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• 2016

In this paper, piezoelectric ceramics with the composition of $(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.8975}Sb_{0.065}Ta_{0.0375})O_3+0.3wt%\;CoO+x\;CuO$ ($0.005{\leq}x{\leq}0.025$) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling $factor(k_p)=0.415$, piezoelectric constant $(d_{33})=166pC/N$ and piezoelectric figure of merit $d_{{33}*}g_{33}=5.47pm^2/N$ were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at $1,000^{\circ}C$ for 3 h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.229-233
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• 2015

In this paper, in order to develop outstanding Pb-free piezoelectric composition ceramics, the $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.3wt%Bi_2O_3+0.4wt%Fe_2O_3+xwt%CuO$ (x= 0~0.8 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effects of CuO-doping on the structure and electrical properties of the NKL-NST ceramics were systematically studied. The results show that the ceramics exhibit a pure perovskite structure with orthorhombic phase at room temperature, and secondary phase was found in the ceramics. The 0.4 wt%CuO added ceramics sintered at $950^{\circ}C$ showed the optimum properties of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient(kp) and mechanical quality factor(Qm) : $d_{33}=213$[pC/N], kp= 0.43, Qm= 423,respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.867-872
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• 2012

In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric actuators application, $Li_{0.04}(Na_{0.50}K_{0.50})_{0.96}[(Nb_{0.86}Ta_{0.10}Sb_{0.04})_{0.994}Co_{0.015}]O_3+0.0025SrO+0.15\;wt%K_2CO_3+x\;wt%Nb_2O_5$ (x = 0 - 0.5 wt%) (abbreviated as LNKNTSCS-xN) ceramics were fabricated by a conventional sintering technique. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the $Nb_2O_5$ content. High electrical properties of $d_{33}$=234 pC/N, kp=0.392, ${\varepsilon}_r$=1,395, ${\rho}=4.70g/cm^3$ were obtained from the specimen with x=0.4 wt%, which suggests that the composition ceramics is a promising lead-free piezoelectric material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.630-634
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• 2014

$(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.9975}Sb_{0.065}Ta_{0.0375})O_3+0.3 wt%CoO$ ceramics were fabricated as a function of CuO addition by traditional solid state sintering process in order to develop excellent lead-free piezoelectric ceramics composition. The addition of CuO in the LNKNTS composition ceramics can effectively enhance the densification of the ceramics, resulting in the oxygen vacancies as hardening effect. The excellent piezoelectric properties of electromechanical coupling factor($k{\small}_P$) of 0.378, piezoelectric constant($d_{33}$) of 152 pC/N were obtained from the 1.0 mol% CuO doped LNKNTS ceramics sintered at $1,020^{\circ}C$ for 3 h.