• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.383-389
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• 2001

We report on the design, fabrication, and characterization of 0.35${\mu}{\textrm}{m}$-gate AIGaAs/InGaAs PHEMTs for millimeter-wane applications. The epi-wafer structures were designed using ATLAS for optimum DC and AC characteristics, 0.351m-gate AIGaAs/rnGaAs PHEMTs having different gate widths and number of fingers were fabricated using electron beam lithography Dependence of RF characteristics of PHEMT on gate finger with and number of gate fingers have been investigated. PHEMT haying two 0.35$\times$60${\mu}{\textrm}{m}$$^2$ gate fingers showed the knee voltage, pinch-off voltage, drain saturation current density, and maximum transconductance of 1.2V, -1.5V, 275㎃/mm, and 260.17㎳/mm, respectively. The PHEMT showed fT(equation omitted)(current gain cut-off frequency) of 45㎓ and fmax(maximum oscillation frequency) of 100㎓. S$_{21}$ and MAG of the PHEMT were 3.6dB and 11.15dB, respectively, at 35㎓

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.121-122
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.1-8
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• 2015

When the line and switchgear of the substation system are disconnected, ferro-resonance can occur. This happens even if the capacitive reactance and inductive reactance are not equal, which are not common resonance conditions. Resonance conditions vary depending on the busbar configuration environment. Although the damping resistance method applying the existing saturable reactor to cope with ferro-resonance has been successfully applied on site, there can be loss of normal function during long-term operation. The reason is because the rise in the operating frequency of saturable reactors means the saturation number is increased. Therefore, it can no longer function as saturable reactor since the resistor having inadequate capacity is burned out. To address this problem, in this paper, an EMTP-based simulation test was performed by designing and applying a dual reactor method, which adds an extended divergence reactor to the 1st side of the VT. The test result confirms that when the divergence reactor is inserted, the voltage and current values obtained at the 1st side and 2nd side of the VT as well as current values of divergence reactor part were stabilized from the transient phenomena and return to normal values. When compared with existing measures, although this method is similar in adding having a reactor added to a system regarding ferro-resonance, it has the advantage of being able to prevent ferro-resonance in advance since the reactor is added before the system is saturated. In addition, because it does not use damping resistance, it can extend the equipment life and stabilize its operation. Therefore, there are a lot of differences in terms of its operating characteristics and achivement of goal between the conventional method and new divergence reactor method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• The Korean Journal of Food And Nutrition
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• v.34 no.4
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• pp.372-380
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• 2021

In this study, data from the 7th (2016~2018) and 8th (2019) Korea National Health and Nutrition Examination Surveys were used, which included 5,325 subjects. Health behavior, dietary and nutrient intake status, physical measurement and biochemical characteristics, and risk factors for elderly related chronic diseases were classified and analyzed according to the changing composition of single households and other households in the current society. As a result, the ratio of current smokers and drinkers in young adult single households, walking less than 30 minutes per day, subjective health status was poor, breakfast rate less than three times per week, eating out frequency more than once a day, lipid intake ratio to total calories, saturation fatty acid intake were significantly higher. In addition, waist circumference, and diastolic blood pressure were significantly higher. However, dietary fiber intake level was significantly lower. The results for hypertension, which is the representative chronic disease that causes old age-related chronic diseases, were significantly higher in single households (ORs=1.400 (95% CI: 1.095, 1.791), p=0.007). Although young adults may not have showed particularly serious health problems yet, education is believed as important to recognize and prevent age-related disease risk factors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.241-245
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• 2022

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.17 no.2
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• pp.45-58
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• 2012

For the development of reference values and evaluation of water quality in various environmental conditions, we divided the coastal region around Korean peninsular into 5 distinctive ecological regions based on the influence of surface current, depth, tidal range, turbidity, and climate condition. We used national marine environment monitoring data collected by National Fisheries Research & Development Institute(NFRDI) from 2000-2009. For the reference values, we used maximum seasonal mean from 2000 to 2007 for DIN, DIP, and chlorophyll-a and minimum seasonal mean for secchi depth measured at stations without the influence of river runoff in each ecological regions. For the reference value of bottom dissolved oxygen saturation, we used minimum mean value of 90% calculated from minimal riverine influence stations of whole regions. We calculated enrichment score for each assessment criteria. The enrichment score of DIN, DIP, and Chlorophyll-a was 1 (=< reference value), 2 (< 110% of reference value), 3 (< 125% of reference value), 4 (< 150% of reference value), and 5 (> 150% of reference value). The enrichment score of DO saturation and Secchi depth was 1 (> reference value), 2 (> 90% of reference value), 3 (>75 % of reference value), 4 (> 50% of reference value), and 5 (< 50% of reference value). We calculated water quality index using weighted linear combination of five enrichment score for the comparison of whole regions. From the water quality index distribution calculated from all stations between 2000 and 2007 period, we classified into 5 grade based on the standard deviation calculated from total water quality index. We assigned grade very good(I), good(II), moderate(III), bad(IV), and very bad(V) when the water quality index was less than 23, minimum + 1 sd, +2 sd, +3 sd, and grater than minium+ 3 sd, respectively.