• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.57-66
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• 2012

When typical Z-source DC/AC inverter(ZSI) is operated in high voltage gain area, because of its high duty ratio, voltage and current stress in Z-network of typical ZSI are increased. This paper proposes a new switched trans ZSI(STZSI) with two switched trans cells which consist of one trans and two diodes. To confirm the operation performance of the proposed system, the PSIM simulation is performed for typical ZSI, switched inductor ZSI and the proposed STZSI. Voltage / current stress and transient state characteristics of each method are compared under the condition of DC input voltage 100[V] and output phase voltage 66[Vrms]. As a result, we confirmed that transient state of the proposed STZSI is short compared with the conventional ZSI because the high voltage gain is obtained using the same duty ratio, also a low duty ratio is required for the same output voltage. Finally, we could know the proposed system have low voltage and current stress in Z-network compared with the conventional ZSI.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.123-130
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• 2013

This paper proposes the switched trans Z-source inverter(STZSI) which combined the characteristics of the trans Z-source inverter(TZSI) and the switched inductor Z-source inverter(SLZSI). The proposed STZSI has the same performance compared with the SLZSI which is improved the voltage boost performance of the conventional typical X-shaped ZSI, and it has advantage that circuit structure of Z-impedance network is more simple. And, in order to step up the voltage boost factor under the condition of the same duty ratio, unlike the SLZSI adding the inductors and diodes, the proposed method is dune by changing the turn ratio of trans primary winding of Z-impedance network. To confirm the validity of the proposed method, PSIM simulation and a DSP(TMS320F28335) based experiment were performed using trans with turn ratio 1 and 2 under the condition of the input DC voltage VI=50V, duty ratio D=0.1 and D=0.15. As a result, under the same input/ouput condition, the inverter arm voltage stress of the proposed method is reduced to about 15%-22% as compared with typical X-shaped ZSI, and the elements in Z-impedance network of the proposed method is reduced as compared with the SLZSI.

• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.209-210
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• 2012

본 연구에서는 종전의 X자형 임피던스 망을 갖는 Z-소스 인버터(X-ZSI)에 비해 부스트 성능을 향상시킨 변압기를 이용한 ZSI(X-STZSI)의 임피던스 망을 설계하였다. 사용된 변압기는 이상적인 변압기에 자화 인덕턴스를 고려한 모델을 이용하였다. 따라서 임피던스 망을 구성하는 변압기의 자화 인덕턴스와 커패시터 용량을 산정하는 방법을 함께 설명하고 PSIM 시뮬레이션을 통해 검증하였다.