• Journal of Magnetics
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• v.17 no.2
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• pp.73-77
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• 2012

We investigate spin transfer torque (STT) in magnetic multilayer structures using micromagnetic simulations. We implement the STT contribution for magnetic multilayer structures in addition to the Landau-Lifshitz-Gilbert (LLG) micromagnetic simulators. In addition to the Sloncewski STT term, the zero, first, and second order field-like terms are also considered as well as the effects of the Oersted field due to the running current are addressed. We determine the switching current densities of the free layer with the exchange biased synthetic ferrimagnetic reference layers for various cases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.728-732
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• 2014

Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.22-27
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• 2009

Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.62.1-62.1
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• 2007

• Journal of Magnetics
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• v.15 no.4
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• pp.149-154
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• 2010

Synthetic antiferromagnets (SAFs) are used as free layer structures for various magnetic devices utilizing spintransfer torque (STT). Therefore, it is important to understand current-induced excitation of SAFs. By means of drift-diffusion and macrospin models, we studied the current-induced excitation of a SAF-free layer structure (NiFe/Ru/NiFe). The simulation results were compared with the previous experimental results [N. Smith et al., Phys. Rev. Lett. 101, 247205 (2008)]. We confirmed that a nonzero STT through the Ru layer is essential for explaining the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.179-184
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• 2016

For an industrial spin-transfer torque (STT) MRAM, low switching current and high thermal stability are required, simultaneously. For this point of view, it is essential to find magnetic materials which satisfy high spin polarization and strong perpendicular magnetocrystalline anisotropy (MCA). In this paper, we investigate electronic structures and MCA energies of perovskite $CoFeX_3$ (X = O, F, S, Cl). For X = F and Cl, spin polarization at the Fermi level are 97 % and 96 %, respectively, which are close to a half metal. Furthermore, Co-terminated 5-monolayer (ML) $CoFeX_3$ (X = O, F, S, Cl) films show perpendicular MCA. In particular, the MCA energy of the Co-terminated $CoFeCl_3$ is about 1.0 meV/cell which is three times larger than that of a 5-ML CoFe film. Therefore, we expect to realize a magnetic material with high spin polarization and strong perpendicular MCA energy by utilizing group 6 and 7 elements in the periodic table, and to contribute to commercializing of the STT-MRAM.

• IEMEK Journal of Embedded Systems and Applications
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• v.11 no.2
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• pp.67-78
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• 2016

The emerging Spin-Transfer Torque RAM (STT-RAM) is a promising component that can be used to improve the efficiency as a result of its high storage density and low leakage power. However, the state-of-the-art STT-RAM is not ready to replace SRAM technology due to the negative effect of its write operations. The write operations require longer latency and more power than the same operations in SRAM. Therefore, a hybrid cache with SRAM and STT-RAM technologies is proposed to obtain the benefits of STT-RAM while minimizing its negative effects by using SRAM. To efficiently use of the hybrid cache, it is important to place write intensive data onto the cache. Such data should be placed on SRAM to minimize the negative effect. Thus, we propose a technique that optimizes placement of data in main memory. It drives the proper combination of advantages and disadvantages for SRAM and STT-RAM in the hybrid cache. As a result of the proposed technique, write intensive data are loaded to SRAM and read intensive data are loaded to STT-RAM. In addition, our technique also optimizes temporal locality to minimize conflict misses. Therefore, it improves performance and energy consumption of the hybrid cache architecture in a certain range.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.4
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• pp.274-282
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• 2016

This paper proposes code optimization techniques to reduce energy consumption of complex multimedia applications in a hybrid memory system with volatile dynamic random access memory (DRAM) and non-volatile spin-transfer torque magnetoresistive RAM (STT-MRAM). The proposed approach analyzes read/write operations for variables in an application. Based on the profile, variables with a high read operation are allocated to STT-MRAM, and variables with a high write operation are allocated to DRAM to reduce energy consumption. In this paper, to optimize code for real-life complicated applications, we develop a profiler, a code modifier, and compiler/link scripts. The proposed techniques are applied to a Fast Forward Motion Picture Experts Group (FFmpeg) application. The experiment reduces energy consumption by up to 22%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.