• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1146-1158
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• 1993

In this paper, parallel scrambling techniques are considered for practical use in the SDH transmission and the ATM transmission. In the ATM transmission, there are two ways of transmitting ATM cells - the SDH-based and the cell-based - and the corresponding scrambling techniques differ accordingly. For the SDH transmission and the SDH-based ATM transmission, the FSS (frame synchronous scrambling) is applied to the STM frames : while for the cell-based ATM trans-mission, the DSS(distributed sample scrambling) is used on the ATM cell stream. The parallel scrambling techniques are examined for the FSS and the DSS, and applied to achieve the parallel FSSs for use in the SDH and the SDH-based ATM transmission along with the parallel DSS applicable to the cell-based ATM transmission. The resulting(8, 4) PSRG(parallel shift resister generator) and (8, 16) PSRG based parallel scramblings are directly applicable for the STM-1 rate processing of the STM-4 and STM-16 scramblings, respectively. Likewise, the resulting (1, 8)PSRG and double-sampling-double-correction based parallel scrambling techniques can be practically used for a low-rate processing of the SDH-based and the cell-based ATM signal scrambling respectively.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.101.2-103
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• 1997

• 전기의세계
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• v.41 no.1
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• pp.19-22
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• 1992

최근 개개 원자들의 움직임을 조절할 수 있는 scanning tunnelling microscope(STM)의 유용성을 입증할만한 가공할 발명은 원자 한개로 ON-OFF 상태를 구현 할 수 있는 원자 스위치의 발명이라 할 수 있다. 이 원자 스위치는 원자를 조정하는 STM의 scanning용 침으로 부터 원자 하나를 니켈 기판위에 전달 할 수 있게 함으로써 가능하게 되었다. STM의 Xenon침과 기판 사이를 Xenon원자 하나가 이동함으로써 스위치 작용이 이루어 지는데 이 스위치 작용이란 높은 전도 상태의 침으로부터 낮은 전도 상태의 기판으로 원자가 이동함으로써 침과 기판 사이에 이루어지는 전기적 전도 현상을 말한다 이러한 전기적 전도 상태는 마이크로 회로에서 중추적인 역할을 수행하는 ON-OFF의 2진 소자나, 스위치 소자로써 사용할 수가 있다.

• Computers and Concrete
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• v.13 no.1
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• pp.135-147
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• 2014

Strut-and-tie model (STM) has been recommended by many codes and standards as a rational model for discontinuity regions in structural members. STM has been adopted in ACI building code for analysis of reinforced concrete (RC) deep beams since 2002. However, STM recommended by ACI 318-11 is only applicable for analysis of ordinary RC deep beams. This paper aims to develop the STM for CFRP strengthened RC deep beams through the strut effectiveness factor recommended by ACI 318-11. Two sets of RC deep beams were cast and tested in this research. Each set consisted of six simply-supported specimens loaded in four-point bending. The first set had no CFRP strengthening while the second was strengthened by means of CFRP sheets using two-side wet lay-up system. Each set consisted of six RC deep beams with shear span to effective depth ratio of 0.75, 1.00, 1.25, 1.50, 1.75, and 2.00.The value of strut effectiveness factor recommended by ACI 318-11 is modified using a proposed empirical relationship in this research. The empirical relationship is established based on shear span to effective depth ratio.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.4
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• pp.624-632
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• 1994

In this paper, we implement modulator of 155Mbps 64QAM RF MODEM, CCITT G. 707 SDH(Synchronous Digital Hierachy) 1 level, for DMR(DIgital Microwave Radio) STM-1 transmission, PSF(Pulse Shaping Filter) plays an important role to analyze modulator. We use 7 orders elliptic filter instead of Chebychev filter(roll-off facter a=0.5)in this paper. we obtain that roll-off factor, a is 0.33, group delay is less than 10nsec using this filter. Also we get -20dBm output level after passing the PSF, and 0dBm output level after passing the IF amplifier.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1822-1828
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• 2004

Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

• Journal of the Korean Society of Physical Medicine
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• v.4 no.3
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• pp.149-156
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• 2009

Purpose：The hamstring muscle has an important role in standing, walking and other functions related to daily living. Most people with Cerebral Palsy(CP) have muscle tightness, especially in the hamstring, which may cause abnormal alignment in the lower extremities. To investigate an effective treatment for hamstring muscle tightness by observing the effects of heat pack or Soft tissue mobilization(STM) on hamstring muscles. Methods：Thirteen-two volunteers with CP aged between 9 and 13 years($M\pmSD$: $11\pm1.46$), were recruited and divided into four groups of four: (1) the STM for people with Spastic CP group, (2) the heat pack(HP) for people with Spastic CP group, (3) the STM for people with Mixd CP group, and (4) the heat pack for people with Mixed CP group. All received treatment three times per week for six weeks. A inclinometer was used to measure for hip flexion & knee extension joint range motion(ROM). Results：The ROM of hip flexion & knee extension were improved at the STM and HP for people with Spastic CP groups. The ROM and hip flexion were improved at the STM and HP for people with Mixed CP groups. The amount of increase ROM are differenced by the types of CP. Conculusion：STM and heat pack, both are effective for people with CP especially for Spastic CP.

• Polymer Science and Technology
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• v.15 no.3
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• pp.363-373
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• 2004

1980년대 초, IBM의 과학자들에 의해 양자역학 현상에 기초한 새로운 현미경이 발명되었다. 뾰족한 금속 팁에 전압을 걸고 전도성 시료의 표면에 접근시키면, 팁이 표면에 접촉하기 직전에 터널링에 의한 전류가 흐르게 된다. 이 전류는 거리에 매우 민감해서 고체 표면에 배열된 원자들에 의해 형성되는 표면 굴곡 (surface corrugation)이 분간 가능하였다. 이 기계가 바로 STM (Scanning Tunneling Microscope)이다 (그럼 1). 이 발명이 있기까지의 약 2세기 가량의 시간 동안 "누구에 의해서도 결코 감지된 적 없는" (H. J. Robinson, Physics Today, March, 24, 1984.) 원자와 분자는 과학자들의 논리 속에 이론상으로 존재할 뿐이었다. STM의 발명으로 인해 인류는 바야흐로 개개의 원자와 분자를 직접적으로 감지할 수 있게 되었던 것이다. 처음으로 STM을 이용하여 원자해상도로 본 표면은 실리콘의 안정한 표면인 Si (111)-7${\times}$7 표면이었는데, 이러한 실리콘 표면의 STM 사진의 예를 그림 2에 나타내었다. (중략)타내었다. (중략)

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.6B
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• pp.1074-1079
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• 1999

A high performance CMOS receiver for 155.52 Mbps STM-1 digital communication has been designed and fabricated. The ASIC operates properly with 155.52 MHz clock frequency in case of the data loss due to some system error such as transmission line open or data transfer fail. Also it operates properly in case the system starts after the power failure or system maintenance. The designed circuit has especially PLL based self oscillation loop which operates on abnormal environment which is added to main oscillation loop. The measured results show that the circuit operates well with 153.52 MHz clock frequency not only on normal environment but also on abnormal environment. Rms jitter of the PLL loop is about 23 ps.