• Journal of Microbiology and Biotechnology
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• 제26권7호
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• pp.1173-1181
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• 2016

Salmonella spp. are gram-negative flagellated bacteria that cause a variety of diseases in humans and animals, ranging from mild gastroenteritis to severe systemic infection. To explore development of a potent vaccine against Salmonella infections, the gene encoding outer membrane protein L (ompL) was inserted into the swinepox virus (SPV) genome by homologous recombination. PCR, western blot, and immunofluorescence assays were used to verify the recombinant swinepox virus rSPV-OmpL. The immune responses and protection efficacy of rSPV-OmpL were assessed in a mouse model. Forty mice were assigned to four groups, which were immunized with rSPV-OmpL, inactive Salmonella (positive control), wild-type SPV (wtSPV; negative control), or PBS (challenge control), respectively. The OmpL-specific antibody in the rSPV-OmpL-immunized group increased dramatically and continuously over time post-vaccination, and was present at a significantly higher level than in the positive control group (p < 0.05). The concentrations of IFN-γ and IL-4, which represent Th1-type and Th2-type cytokine responses, were significantly higher (p < 0.05) in the rSPV-OmpL-vaccinated group than in the other three groups. After intraperitoneal challenge with a lethal dose of Salmonella typhimurium CVCC542, eight out of ten mice in the rSPV-OmpL-vaccinated group were protected, whereas all the mice in the negative control and challenge control groups died within 3 days. Passive immune protection assays showed that hyperimmune sera against OmpL could provide mice with effective protection against challenge from S. typhimurium. The recombinant swinepox virus rSPV-OmpL might serve as a promising vaccine against Salmonella infection.

• 한국진공학회지
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• 제19권5호
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• pp.353-359
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• 2010

Metal-organic chemical vapour deposition (MOCVD) 법으로 성장된 $In_{0.49}Ga_{0.51}P$/GaAs 이종접합 구조의 특성을 표면 광전압(surface photovoltage; SPV) 분광법으로 조사하였다. SPV 측정은 입사광의 세기, 변조 주파수, 온도의 함수로 수행하였다. 상온에서 시료의 띠간격 에너지(band gap energy)는 GaAs와 $In_{0.49}Ga_{0.51}P$는 각각 1.400 및 1.893 eV이었다. 광세기를 증가시킴에 따라 SPV 크기는 증가하는 반면에, 변조 주파수를 증가시킴에 따라 SPV 크기는 감소하였다. 그리고 SPV 스펙트럼의 온도 의존성으로부터 GaAs와 $In_{0.49}Ga_{0.51}P$의 띠간격 에너지의 변화를 Varshni 및 Bose-Einstein 표현에 의해 분석하였다.

• 한국동물위생학회지
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• 제33권4호
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• pp.341-344
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• 2010

Poultry and poultry products have been implicated as a major source of Salmonella infection in human, and infection due to Salmonella serotypes continue to be a major health problem. The presence of two virulence genes, invA and spvC, in 34 Salmonella isolates obtained from duck farms was investigated. All isolates contained the invA gene, and spvC gene was found in 20 (58.8%) of 34 Salmonella isolates : S. Typhimurium (n=8), S. Fyris (n=5), S. Enteritidis (n=3), S. Typhimurium var. copenhagen (n=1), S. Haardt (n=1) and S. Mbandaka (n=1). This study showed the presence of the spvC gene was widely distributed in between different Salmonella enterica isolates.

• 한국압력기기공학회 논문집
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• 제10권1호
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• pp.31-36
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• 2014

For decreasing an unexpected shutdown of Nuclear Power Plants, Korea Hydro & Nuclear Power co.(KHNP) has developed Single Point Vulnerability(SPV) of NPPs since 2008. SPV is the equipment that cause reactor shutdown & turbine trip or more than 50% power rundown due to its malfunction. New type Nuclear Power Plants need to develop the SPV list, so performed the SPV selection for about 1 year. To develop this, Failure Mode Effect Analysis(FMEA) methods are used. As results of FMEA analysis, about 700 equipment are selected as SPV. Thereafter those are going to be applied to new type Nuclear Power Plants to enhance equipment reliability.

• 전기학회논문지
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• 제61권4호
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• pp.509-512
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• 2012

For decreasing an unexpected shutdown of Nuclear Power Plants, Korea Hydro & Nuclear Power co.(KHNP) has developed Single Point Vulnerability(SPV) of NPPs since 2008. SPV is the equipment that cause reactor shutdown & turbine trip or more than 50% power rundown due to its malfunction. Newly built Nuclear Power Plants need to develop the SPV list, so performed the job which analyse equipment failure effect for SPV selection for 1 year. To develop this, Failure Mode Effect Analysis(FMEA) and Fault Tree Analysis(FTA) methods are used. As results of this analysis, about 900 equipment are selected as SPV. Thereafter those are going to be applied to Nuclear Power Plants to enhance equipment reliability.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.130-133
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• 2006

Solar Photovoltaics (SPV) In India has become an important renewable source of energy particularly for rural and remote areas. The vastness of the country and the requirements of electricity in far-flung villages makes SPV very attractive, with inherent technological advantages providing additional boost. This has been recognized very early by Govt. Of India and Ministry of Non-Conventional Sources of Energy (MNES) has been entrusted with promoting SPV usage in the country. Rural electrification through SPV systems is one of the programmes which is expected to provide fillip to PV industry in the country. PV Industry in India is very well established with capability of solar cell fabrication and module fabrication as well as Balance of System design and fabrication. There several R&D groups in the academic institutions who are involved in improving solar cells efficiency, thin film solar cells and PV instrumentation. Thus, India provides a ready market for large scale utilization of solar energy through SPV technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.685-686
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• 2008

For the purpose of reducing the plant trip/transient by the failure of a single component during plant operation or maintenance, the list of critical components with Single Point Vulnerability (SPV) on KSNP (Korean Standard Nuclear Power Plant), the standardized methodology of SPV evaluation and the plan to improve reliability of the equipment have been established. In addition, SPV component lists for the other domestic operating Nuclear Power Plants have been made, and the proper procedure for SPV management will be developed.

• Anatomy and Cell Biology
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• 제56권2호
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• pp.200-204
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• 2023

Although in counterpart, the sphenopalatine artery (SPA), has been well described in the medical literature, the sphenopalatine vein (SPV) has received scant attention. Therefore, the present anatomical study was performed. Additionally, we discuss the variations, embryology, and clinical significance of the SPV. Adult cadaveric specimens underwent dissection of the SPV. In addition, some specimens were submitted for histological analysis of this structure. The SPV was found to drain from the sphenoidal sinus and nasal septum. Small tributaries traveled through the nasal septum with the posterior septal branches of the SPA and nasopalatine nerve. The SPA and SPV were found to travel through the sphenopalatine foramen and another tributary was found to perforate the medial plate of the pterygoid process and to connect to the pterygoid venous plexus which traveled lateral to the medial plate of the pterygoid process. The vein traveled through the posterior part of the lateral wall of the nasal cavity with the posterior lateral nasal branches of the SPA and the lateral superior posterior nasal branches of the maxillary nerve. To our knowledge, this is the first anatomical study on the SPV in humans. Data on the SPV provides an improved anatomical understanding of the vascular network of the nasal cavity. Developing a more complete picture of the nasal cavity and its venous supply might help surgeons and clinicians better manage clinical entities such as posterior epistaxis, cavernous sinus infections, and perform endoscopic surgery with fewer complications.

• 한국진공학회지
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• 제10권3호
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• pp.350-355
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• 2001

반절연성 GaAs 위에 분자선 에피택시(MBE)법으로 성장된 ZnSe 에피층의 특성을 표면 광전압(SPV)법을 이용하여 연구하였다. 측정으로는 증가하는 광세기 및 변조 주파수에 따라 시행하였다. 미분한 표면 광전압(DSPV) 신호로부터 ZnSe 에피층의 띠간 에너지는 결정되었다. 실온의 표면 광전압 신호로부터 5개의 준위들이 관측되었는데, 이러한 준위들은 성장시 계면에서 형성되는 불순물 및 결함과 관계된다. 관측된 준위들은 입사광 세기에 따른 외인성 전이의 경향을 보여주었다. 실온에서 관측되지 않은 1s와 2s 엑시톤 흡수와 관계된 신호가 80 K에서 측정한 표면 광전압 스펙트럼에서 두 개의 피크로 분리되어 나타났다. 변조 주파수 의존성으로부터 시료의 접합콘덕턴스 및 용량을 구하였다.

• 한국진공학회지
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• 제9권2호
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• pp.116-121
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• 2000

Molecular beam epitaxy(MBE)로 성장시킨 $Al_{0.24}Ga$$_{0.76}As/GaAs$ 에피층 구조의 표면 광전압을 측정하였다. 측정된 신호로부터 구한 $Al_{0.24}Ga$$_{0.76} As/GaAs$ 에피층, GaAs 기판 그리고 GaAs 완충층의 밴드갭 에너지는 각각 1.72, 1.40 그리고 1.42 eV이다. 이는 phoareflectance(PR) 측정 결과와 잘 일치하였다 그리고 $Al_{0.24}Ga $_{0.76} As/GaAs$ 에피층이 GaAs기판의 표면 광전압세기 보다 약 3배 정도 작게 나타났는데 이는 캐리어의 이동도 차이로 나타나는 현상으로 해석된다. 또한 표면 광전압의 온도 의존성으로부터 Varshni 식의 계수들을 구하였다.