• Title/Summary/Keyword: SPV

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Construction and Immunogenicity of Recombinant Swinepox Virus Expressing Outer Membrane Protein L of Salmonella

  • Fang, Yizhen;Lin, Huixing;Ma, Zhe;Fan, Hongjie
    • Journal of Microbiology and Biotechnology
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    • v.26 no.7
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    • pp.1173-1181
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    • 2016
  • Salmonella spp. are gram-negative flagellated bacteria that cause a variety of diseases in humans and animals, ranging from mild gastroenteritis to severe systemic infection. To explore development of a potent vaccine against Salmonella infections, the gene encoding outer membrane protein L (ompL) was inserted into the swinepox virus (SPV) genome by homologous recombination. PCR, western blot, and immunofluorescence assays were used to verify the recombinant swinepox virus rSPV-OmpL. The immune responses and protection efficacy of rSPV-OmpL were assessed in a mouse model. Forty mice were assigned to four groups, which were immunized with rSPV-OmpL, inactive Salmonella (positive control), wild-type SPV (wtSPV; negative control), or PBS (challenge control), respectively. The OmpL-specific antibody in the rSPV-OmpL-immunized group increased dramatically and continuously over time post-vaccination, and was present at a significantly higher level than in the positive control group (p < 0.05). The concentrations of IFN-γ and IL-4, which represent Th1-type and Th2-type cytokine responses, were significantly higher (p < 0.05) in the rSPV-OmpL-vaccinated group than in the other three groups. After intraperitoneal challenge with a lethal dose of Salmonella typhimurium CVCC542, eight out of ten mice in the rSPV-OmpL-vaccinated group were protected, whereas all the mice in the negative control and challenge control groups died within 3 days. Passive immune protection assays showed that hyperimmune sera against OmpL could provide mice with effective protection against challenge from S. typhimurium. The recombinant swinepox virus rSPV-OmpL might serve as a promising vaccine against Salmonella infection.

Surface Photovoltage Characterization of In0.49Ga0.51P/GaAs Heterostructures (In0.49Ga0.51P/GaAs 이종접합 구조의 표면 광전압 특성)

  • Kim, Jeong-Hwa;Kim, In-Soo;Bae, In-Ho
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.353-359
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    • 2010
  • We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.

Detection of invA and spvC in Salmonella spp. isolated from duck farms (오리 농장에서 분리한 Salmonella속 균에서 invA 및 spvC gene의 검출)

  • Cho, Jae-Keun
    • Korean Journal of Veterinary Service
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    • v.33 no.4
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    • pp.341-344
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    • 2010
  • Poultry and poultry products have been implicated as a major source of Salmonella infection in human, and infection due to Salmonella serotypes continue to be a major health problem. The presence of two virulence genes, invA and spvC, in 34 Salmonella isolates obtained from duck farms was investigated. All isolates contained the invA gene, and spvC gene was found in 20 (58.8%) of 34 Salmonella isolates : S. Typhimurium (n=8), S. Fyris (n=5), S. Enteritidis (n=3), S. Typhimurium var. copenhagen (n=1), S. Haardt (n=1) and S. Mbandaka (n=1). This study showed the presence of the spvC gene was widely distributed in between different Salmonella enterica isolates.

Failure Mode Effective Analysis for selection of Single Point Vulnerability in New type Nuclear Power Plant (신규노형 원전의 발전정지유발기기 선정을 위한 고장모드영향분석)

  • Hyun, Jin Woo;Yeam, Dong Un
    • Transactions of the Korean Society of Pressure Vessels and Piping
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    • v.10 no.1
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    • pp.31-36
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    • 2014
  • For decreasing an unexpected shutdown of Nuclear Power Plants, Korea Hydro & Nuclear Power co.(KHNP) has developed Single Point Vulnerability(SPV) of NPPs since 2008. SPV is the equipment that cause reactor shutdown & turbine trip or more than 50% power rundown due to its malfunction. New type Nuclear Power Plants need to develop the SPV list, so performed the SPV selection for about 1 year. To develop this, Failure Mode Effect Analysis(FMEA) methods are used. As results of FMEA analysis, about 700 equipment are selected as SPV. Thereafter those are going to be applied to new type Nuclear Power Plants to enhance equipment reliability.

Selection of Single Point Vulnerability through the Failure Mode Effect Analysis of Equipment in Newly built Nuclear Power Plant (신규원전의 기기별 고장분석을 통한 발전정지유발기기 선정)

  • Hyun, Jin-Woo;Yeom, Dong-Un;Song, Tae-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.4
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    • pp.509-512
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    • 2012
  • For decreasing an unexpected shutdown of Nuclear Power Plants, Korea Hydro & Nuclear Power co.(KHNP) has developed Single Point Vulnerability(SPV) of NPPs since 2008. SPV is the equipment that cause reactor shutdown & turbine trip or more than 50% power rundown due to its malfunction. Newly built Nuclear Power Plants need to develop the SPV list, so performed the job which analyse equipment failure effect for SPV selection for 1 year. To develop this, Failure Mode Effect Analysis(FMEA) and Fault Tree Analysis(FTA) methods are used. As results of this analysis, about 900 equipment are selected as SPV. Thereafter those are going to be applied to Nuclear Power Plants to enhance equipment reliability.

SOLAR PHOTOVOLTAICS IN INDIA : A STATUS REVIEW

  • DUTTA, VIRESH
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.130-133
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    • 2006
  • Solar Photovoltaics (SPV) In India has become an important renewable source of energy particularly for rural and remote areas. The vastness of the country and the requirements of electricity in far-flung villages makes SPV very attractive, with inherent technological advantages providing additional boost. This has been recognized very early by Govt. Of India and Ministry of Non-Conventional Sources of Energy (MNES) has been entrusted with promoting SPV usage in the country. Rural electrification through SPV systems is one of the programmes which is expected to provide fillip to PV industry in the country. PV Industry in India is very well established with capability of solar cell fabrication and module fabrication as well as Balance of System design and fabrication. There several R&D groups in the academic institutions who are involved in improving solar cells efficiency, thin film solar cells and PV instrumentation. Thus, India provides a ready market for large scale utilization of solar energy through SPV technology.

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Evaluation of Single Point Vulnerability on Korean Standard Nuclear Power Plants (국내 표준형 원전의 단일 고장 취약성(SPV) 평가)

  • Chi, Moon-Goo;Kim, Myung-Su
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.685-686
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    • 2008
  • For the purpose of reducing the plant trip/transient by the failure of a single component during plant operation or maintenance, the list of critical components with Single Point Vulnerability (SPV) on KSNP (Korean Standard Nuclear Power Plant), the standardized methodology of SPV evaluation and the plan to improve reliability of the equipment have been established. In addition, SPV component lists for the other domestic operating Nuclear Power Plants have been made, and the proper procedure for SPV management will be developed.

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A study on characteristics of ZnSe epilayer by using surface photovoltage (표면 광전압을 이용한 ZnSe 에피층의 특성 연구)

  • 최상수;정명랑;김주현;배인호;박성배
    • Journal of the Korean Vacuum Society
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    • v.10 no.3
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    • pp.350-355
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    • 2001
  • We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

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A study on surface photovoltage of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer ($Al_{0.24}Ga_{0.76}As/GaAs$ 에피층에서의 표면 광전압에 관한 연구)

  • 유재인;김도균;김근형;배인호;김인수;한병국
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.116-121
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    • 2000
  • We measured surface photovoltage (SPV) of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer grown by molecular beam epitixy (MBE). The band gap energies of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer, GaAs substrate and buffer layer obtained from SPV signals are 1.70, 1.40 and 1.42 eV, respectively. There results are in good agreements with photoreflectance (PR) measurement. The measured SPV intensity of GaAs substrate is three times larger than $Al_{0.24}Ga_{0.76}$Asepilayer by carrier mobility difference. The parameters of Varshni equation were determined from the SPV spectra as a function of temperature.

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Assessment of Cerebral Circulatory Arrest via CT Angiography and CT Perfusion in Brain Death Confirmation

  • Asli Irmak Akdogan;Yeliz Pekcevik;Hilal Sahin;Ridvan Pekcevik
    • Korean Journal of Radiology
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    • v.22 no.3
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    • pp.395-404
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    • 2021
  • Objective: To compare the utility of computed tomography perfusion (CTP) and three different 4-point scoring systems in computed tomography angiography (CTA) in confirming brain death (BD) in patients with and without skull defects. Materials and Methods: Ninety-two patients clinically diagnosed as BD using CTA and/or CTP for confirmation were retrospectively reviewed. For the final analysis, 86 patients were included in this study. Images were re-evaluated by three radiologists according to the 4-point scoring systems that consider the vessel opacification on 1) the venous phase for both M4 segments of the middle cerebral arteries (MCAs-M4) and internal cerebral veins (ICVs) (A60-V60), 2) the arterial phase for the MCA-M4 and venous phase for the ICVs (A20-V60), 3) the venous phase for the ICVs and superior petrosal veins (ICV-SPV). The CTP images were independently reviewed. The presence of an open skull defect and stasis filling was noted. Results: Sensitivities of the ICV-SPV, A20-V60, A60-V60 scoring systems, and CTP in the diagnosis of BD were 89.5%, 82.6%, 67.4%, and 93.3%, respectively. The sensitivity of A20-V60 scoring was higher than that of A60-V60 in BD patients (p < 0.001). CTP was found to be the most sensitive method (86.5%) in patients with open skull defect (p = 0.019). Interobserver agreement was excellent in the diagnosis of BD, in assessing A20-V60, A60-V60, ICV-SPV, CTP, and good in stasis filling (κ: 0.84, 0.83, 0.83, 0.83, and 0.67, respectively). Conclusion: The sensitivity of CTA confirming brain death differs between various proposed 4-point scoring systems. Although the ICV-SPV is the most sensitive, evaluation of the SPV is challenging. Adding CTP to the routine BD CTA protocol, especially in cases with open skull defect, could increase sensitivity as a useful adjunct.