• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 추계학술대회 논문요약집
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• pp.251-251
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• 2003

• 한국진공학회지
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• 제12권4호
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• pp.288-292
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• 2003

Air hole 구조를 갖는 2차원 고분자 광결정 도파로를 나노 임프린트 방법으로 제작하기 위하여, e-beam lithography와 ICP etching 공정을 이용하여 기둥 구조를 갖는 실리콘 나노 마스터를 제작하였다. Air hole 구조를 갖는 광결정 구조를 얻기 위해, 실리콘 마스터 기둥의 형태를 4각형, 6각형, 12각형 및 원으로 설계하였다. 제작된 기둥의 직경과 구조를 CD-SEM과 SPM-AFM을 이용하여 측정하였으며, dose가 432 $\mu$C/$\textrm{cm}^2$일 때 최적의 dose임을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.699-702
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• 2004

Next generation lithography technologies, such as EBL(Electron Beam Lithography), X-ray lithography, SPL(Scanning Probe Lithography), have been studied widely for getting over line width limitation of photolithography. Among the next generation lithography technologies, SPL has been highlighted because of its high resolution advantage. But is also has problem which are slow processing time and sample size limitation. The purpose of this study is complement of present SPL system. Brand new SPL system was made. SPL test was performed with the system in ultra thin PMMA(polymethlymethacrylate) film.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.330-333
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• 2005

The fabrication of mold fur nano imprint lithography (NIL) is experimentally reported using the scanning probe lithography (SPL) technique, instead of the conventional I-beam lithography technique. The nanometer scale patterning structure is fabricated by the localized generation of oxide patterning on the silicon (100) wafer surface with a thin oxide layer, The fabrication method is based on the contact mode of scanning probe microscope (SPM) in air, The precision cleaning process is also performed to reach the low roughness value of $R_{rms}=0.084 nm$, which is important to increase the reproducibility of patterning. The height and width of the oxide dot are generated to be 15.667 nm and 209.5 nm, respectively, by applying 17 V during 350 ms.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1048-1051
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• 2003

주사탐침현미경 (Scanning Probe Microsope, SPM)을 이용하여 직접 패터닝을 함으로써 hexanedithiol 분자의 임의 패턴을 금 표면에 형성하였다. 또한, hexanedithiol 분자는 양단에 thiol 그룹이 존재하여 금과 안정화 화학결합을 이룰 수 있으므로, 금 표면과결합을 이루고 있지 않는 상단의 thiol 그룹에 금 나노 입자를 고정함으로써 나노입자의 패턴을 제작하였다. SPM을 이용한 직접 패터닝 방법은 분자활성을 유지한 채로 임의 패턴을 수십 nm의 선폭으로 구현하는 것이 가능하므로, 나노입자 배열뿐만 아니라, 생화학물질의 패터닝을 통한 바이오 기술연구, 레지스트용 분자 패터닝과 시각 및 흡착 등의 계속적인 공정을 통한 다양한 나노구조 제작 등에 폭넓게 활용될 수 있다.

• 제어로봇시스템학회논문지
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• 제14권5호
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• pp.420-425
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• 2008

PMMA light guiding plate with nano-sized pattern was fabricated using anodized aluminum oxide membrane as a template for nano imprint lithography. Nano-sized pore arrays were prepared by the self-organization processes of the anodic oxidation using the aluminum plate with 99.999% purity. Since the aluminum plate has a rough surface, the aluminum plate with thickness of 1mm was anodized after the pre-treatments of chemical polishing, and electrochemical polishing. The surface morphology of the alumina obtained by the first anodization process was controlled by the concentration of electrochemical solution during the first anodization. The surface morphology of the alumina was also changed according to temperature of the solution during chemical polishing performed after first anodization. The pore widening process was employed for obtaining the one-channel with flat surface and height of the channel because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. It is shown from SPM results that the nano-sized pattern on PMMA light guiding plate fabricated by nano imprint lithography method was well transferred from that of anodized aluminum oxide template.

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.169-172
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• 2008

We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

• 소성∙가공
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• 제13권4호
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• 소성∙가공
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• 제12권7호
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• pp.640-646
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• 2003

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.81.1-81.1
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• 2012

나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.