Transactions of Materials Processing (소성∙가공)

The Korean Society for Technology of Plasticity and materials processing (한국소성∙가공학회)
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Maskless Pattern Fabrication on Si (100) Surface by Using Nano Indenter with KOH Wet Etching

나노인덴터와 KOH 습식 식각 기술을 병용한 Si(100) 표면의 마스크리스 패턴 제작 기술

  • 윤성원 (부산대 정밀기계공학부 대학원) ;
  • 신용래 (부산대 정밀기계공학부 대학원) ;
  • 강충길 (부산대 기계공학부)
  • Published : 2003.11.01
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Abstract

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

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References

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