• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• Journal of IKEEE
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• v.12 no.4
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• pp.255-262
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• 2008

In this paper, we proposed the novel IGBT with an additional n-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed IGBT are caused by an enhanced electron current injection efficiency which is caused by additional n-type MOS structure. In the simulation result, the proposed IGBT has the lower on state voltage of 2.65V and the shorter turn-off time of 4.5us than those of the conventional IGBT(3.33V, 5us).

• Journal of The Korean Association For Science Education
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• v.34 no.3
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• pp.197-206
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• 2014

The purpose of this study is to research pre-service chemistry teachers' inquiry ability and perception on inquiry by analyzing their argument structure. Nine graduating senior students have participated in this study. They have experimented with mass change during state change, which is included in 7th grade science textbook. We have analyzed pre-service teachers' experimental reports using Toulmin's argument model. Also, we have researched their views on science and experiments through questionnaires and semi-structured interviews. As results show, various factors have affected pre-services' argument structures; lack of science knowledge and inquiry ability, belief about error, and additive data. This study shows that pre-service teachers' inquiry abilities is insufficient, and it is necessary to review rearrangement of pre-service science teacher curriculum in order to offer inquiry experiments in teacher education program.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.311-316
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• 2015

This paper presents a design method for thin but wideband absorbers using resistive sheets. Its equivalent circuit consists of a series RLC resonant circuit and a short-terminated transmission line. Based on this equivalent circuit, we presented the three conditions for an electromagnetic absorber which has a thickness less than a quarter wavelength and wide absorption bandwidth at center frequency. By using an root-finding algorithm, the equivalent resistance, capacitance, and inductance of the absorbers are obtained. These equivalent circuit values for the absorber surface can be realized by a 2D periodic cross-shaped structure which has required surface resistance. Using the design method, we have designed the absorber which has 18.75 mm($67.5^{\circ}$ electrical length) thickness and 90 % absorption bandwidth of 116 % bandwidth at 3 GHz.

• Korean Journal of Environmental Biology
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• v.31 no.2
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• pp.105-112
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• 2013

Environmental parameters and phytoplankton community structure were investigated at four sites of Yeongsan River between April 2010 and December 2011. The standing crops of the phytoplankton ranged from $275cells{\cdot}mL^{-1}$ to $58,600cells{\cdot}mL^{-1}$ with an average of $5,850cells{\cdot}mL^{-1}$. The dominant species were Cyclotella sp., Stephanodiscus sp., Aulacoseira granulata, Scenedesmus quadricauda, Pediastrum biwae, Coelastrum sp., Aphnizomenon sp., and Oscillatoria sp.. The most dominant species was Stephanodiscus sp.. The concentration of chlorophyll-a ranged from $2.3mg{\cdot}m^{-3}$ to $164.2mg{\cdot}m^{-3}$. The phytoplankton community structure of the survey area was influenced by temperature and rainfall.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Journal of KIISE
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• v.41 no.11
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• pp.935-942
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• 2014

Today, it is very important issue to high quality of software issue on huge scale of code and time-to-market. In the industrial fields still developers focuses on Code based development. Therefore we try to consider two points of views 1) improving the general developer the bad development habit, and 2) maintenance without design, documentation and code visualization. To solve these problems, we need to make the code visualization of code. In this paper, we suggest how to visualize the inner structure of code, and also how to proceed improvement of quality with constructing the Tool-Chain for visualizing Java code's inner structure. For our practical case, we applied Object Code with NIPA's SW Visualization, and then reduced code complexity through quantitatively analyzing and visualizing code based on setting the basic module unit, the class of object oriented code.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.5 no.2
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• pp.51-57
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• 1985

In the design of civil engineering structures, the designers are invariably faced to the uncertainties and the randomness of the design parameters such as material properties and loads. Even when the structures are built, the actual geometries of the structures are also subject to their random variations from their nominal design values. Thus, the reliability of a structure in terms of these uncertainties and variations becomes a matter of great concern to the structural designers. This study employs the First Order Second Moment Method to evluate numerically the reliability of a simple tension member and discusses the influence on the final failure probability of that structure due to: 1) use of equivalent normal distribution in place of non-normal distribution, 2) linearization of non linear limit state equation. A discussion is also made on the necessity of fundamental studies on the distrubution characteristics of the strength of locally produced construction materials and those of the loads frequently encountered in the structural design.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.179-198
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• 2004

Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Recently, many fluorescent organic materials have been reported and the study on synthesis and application of new organic light-emitting materials has been demanded. This paper reports the optical and electrical characteristics of OLEDs using novel polymers containing biphenyl structure. First, Optical properties of novel light-emitting biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) and emitted blue, bluish green color, which is attributed to the overlap area between PL spectrum of host(PVK) and absorption spectra of guests(polymer). This is correspondent with F$\"{o}$rster energy transfer process in the blends. And, OLED devices were fabricated using poly (3,4-ethylenedioxy thiophene) (PEDOT) as a hole injection material and tris-(8-hydroxyquinoline) aluminum ($Alq_3$) as an electron transporting material. EL devices fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L chatacteristics and emitting efficiency of EL devices were examined. Finally, the drift mobility of PVK doped with biphenyl derivatives and $Alq_3$ were measured by TOF technique varying applied electric field. EL efficiency was increased as the ratio of hole mobility of PVK doped with biphenyl derivatives and electron mobility of $Alq_3$ was close to one.

• Journal of Korea Multimedia Society
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• v.13 no.7
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• pp.943-949
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• 2010

This paper presents some improvements on VLSI implementation of lifting-based 9/7 wavelet transform by optimization hardware multiplication. The proposed solution requires less logic area and power consumption without performance loss compared to previous wavelet filter structure based on lifting scheme. This paper proposes a better approach to the hardware implementation using Lefevre algorithm based on extensions of Pattern search methods. To compare the proposed structure to the previous solutions on full multiplier blocks, we implemented them using Verilog HDL. For a hardware implementation of the two solutions, the logical synthesis on 0.18 um standard cells technology show that area, maximum delay and power consumption of the proposed architecture can be reduced up to 51%, 43% and 30%, respectively, compared to previous solutions for a 200 MHz target clock frequency. Our evaluation show that when design VLSI chip of lifting-based 9/7 wavelet filter, our solution is better suited for standard-cell application-specific integrated circuits than prior works on complete multiplier blocks.