• 제목/요약/키워드: SOLAR cell

검색결과 3,153건 처리시간 0.03초

롤투롤 공정의 인쇄 후 구간에서 변형률과 인쇄한 패턴의 전기 전도도와의 관계에 대한 연구 (A study on the Relation between Strain & Conductivity of the Printed Pattern in Post-Printing Section of Roll to Roll process)

  • 최재호;이창우;신기현
    • 제어로봇시스템학회논문지
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    • 제15권9호
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    • pp.877-880
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    • 2009
  • A curing process in post-printing section of R2R process is required for an electrical property of the printed pattern when devices such as RFID, Solar cell are printed. PEN as well as heat-stabilized PET which is used as a plastic substrate would be deformed at high temperature due to change of its elastic modulus. And crack in the printed pattern, which is on the plastic substrate is occurred due to the deformation of the substrate. The occurrence of crack causes electrical resistance to increase and the quality of the device to deteriorate. In case of RFID antenna, the range of reading distance is shortened as the electrical resistance of the antenna is increased. Therefore, the deformation of the plastic substrate, which causes the occurrence of crack, should be minimized by setting up low operating tension in R2R process. In low tension, slippage between a moving substrate and a roller would be generated when the operating speed is increased. And scratch would be occurred when slippage is generated due to an air entrainment, which is related to the thickness of the air film. The thickness of the air film is increased when operating speed is increased as shown by simulation based on mathematical model. The occurrence of scratch in conductive pattern printed by roll to roll process is a critical damage because it causes degradation or failure of electrical property of it.

Study of the Kinetic Effects on Relativistic Unmagnetized Shocks using 3D PIC Simulations

  • 최은진;민경욱;최청림
    • 천문학회보
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    • 제37권2호
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    • pp.101.2-101.2
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    • 2012
  • Shocks are ubiquitous in astrophysical plasmas: bow shocks are formed by the interaction of solar wind with planetary magnetic fields, and supernova explosions and jets produce shocks in interstellar and intergalactic spaces. The global morphologies of these shocks are usually described by a set of magnetohydrodynamic (MHD) equations which tacitly assumes local thermal equilibrium, and the resulting Rankine-Hugoniot shock jump conditions are applied to obtain the relationship between the upstream and downstream physical quantities. While thermal equilibrium can be achieved easily in collisional fluids, it is generally believed that collisions are infrequent in astrophysical settings. In fact, shock widths are much smaller than collisional mean free paths and a variety of kinetic phenomena are seen at the shock fronts according to in situ observations of planetary shocks. Hence, both the MHD and kinetic equations have been adopted in theoretical and numerical studies to describe different aspects of the physical phenomena associated with astrophysical shocks. In this paper, we present the results of 3D relativistic particle-in-cell (PIC) simulations for ion-electron plasmas, with focus on the shock structures: when a jet propagates into an unmagnetized ambient plasma, a shock forms in the nonlinear stage of the Weibel instability. As the shock shows the structures that resemble those predicted in MHD systems, we compare the results with those predicted in the MHD shocks. We also discuss the thermalization processes of the upstream flows based on the time evolutions of the phase space and the velocity distribution, as well as the wave spectra analyses.

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24시간 장기체공 전기 동력 무인항공기 주익 구조 개발 (Development of Main Wing Structure of Long Endurance Electric Powered UAV)

  • 박상욱;신정우;박일경;이무형;우대현;김성준;안석민
    • 항공우주기술
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    • 제12권1호
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    • pp.1-9
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    • 2013
  • 태양전지 및 전기동력을 이용한 장기 체공 무인기의 체공 효율을 증가시키기 위해서는 구조 경량화가 필수적이다. 본 논문에서는 24시간 장기체공 전기동력 무인항공기인 EAV-2H의 주익 경량화 및 구조 건전성 확보를 위하여 Mylar Film과 섬유강화 복합재료로 구성된 주익을 설계하였다. 보이론 해석을 이용하여 주익 Spar의 형상 선정 및 구조 사이징을 수행하였다. EAV-2H 임무를 고려하여 하중해석을 수행하고 주익의 주요 구성품에 대해 유한요소해석을 수행하였다. 마지막으로 주익의 정적구조시험을 통해 주익의 구조 건전성을 확인하였다. 본 연구를 통하여 개발된 EAV-2H 주익은 이전 모델인 EAV-2에 비교하여 Span 기준 42%의 중량이 감소되었으며, 설계극한하중을 부가하는 정적구조시험을 통과하였다.

산화물 나노튜브 구조체 제작 방법 및 그 응용 (Nanotubular Structures of Oxides and Their Applications)

  • 유현준;배창득;김현철;윤영진;김명준;신현정
    • 한국진공학회지
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    • 제19권2호
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    • pp.105-113
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    • 2010
  • 일차원 나노튜브는 구조는 높은 비표면적, 내부의 빈 공간 및 특유의 물리적 특징을 제공한다. 1차원 산화물 나노튜브 구조물의 합성 방법에 따라 나누어 정리하여 논의하였다. 나노 기판을 이용한 나노튜브 합성은 고른 물리적 구조를 가지는 나노튜브를 대량으로 합성하는데 있어서 이상적인 방법으로서 기판의 형태를 상대적으로 용의하게 조절함으로써 1차원 나노튜브 구조물의 특성을 극대화하였다. 극대화된 특성을 이용한 여러 응용 분야에 대한 연구를 정리하여 제시하였다.

Ti-Ga 합금 위에 형성된 산화티타늄 피막의 광 전기분해 특성에 관한 연구 (Photoelectrochemical Behaviour of Oxide Films on Ti-Ga2O3 Alloy)

  • 박성용;조병원;윤경석;이응조
    • 한국수소및신에너지학회논문집
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    • 제3권2호
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    • pp.25-33
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    • 1992
  • With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

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수소 스테이션의 연구개발 동향 및 단위공정 기술 (R&D Trends and Unit Processes of Hydrogen Station)

  • 문동주;이병권
    • Korean Chemical Engineering Research
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    • 제43권3호
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    • pp.331-343
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    • 2005
  • 연료전지와 수소를 사용하는 연료전지 자동차의 상용화를 위해서는 수소 공급용 수소 스테이션(hydrogen station)의 개발이 중요한 핵심 기반기술이다. 일반적으로 수소 스테이션은 탈황반응, 개질반응(reforming), 수성가스전환(WGS) 반응 및 수소분리(PSA) 장치로 구성된 수소제조 공정과 압축, 저장 및 분배 장치로 구성된 후처리(post-treatment) 공정으로 구성되어 있다. 본 총설에서는 수소 경제(hydrogen economy) 사회로의 진입을 위해 국내외에서 연구개발 중인 수소 스테이션에 대한 연구 개발 동향과 전망을 고찰하였다. 그리고 향후 풍력 및 태양열 등 재생 가능 에너지(renewable energy)원으로부터 물의 분해에 의한 수소제조 기술이 확립되기 전까지는 화석연료의 개질 반응이 수소를 제조하는 핵심기술이 될 것으로 판단된다. 따라서 화석연료의 탈황반응, 화석연료의 개질 반응에 의한 수소제조, CO 농도 저감을 위한 수성가스 전환반응 및 수소의 분리기술 등 수소 스테이션의 상용화에 필수적인 단위공정개발에 대한 최근의 연구동향을 정리하였다.

보안등에 적용하기 위한 태양전지의 특성 분석 (THE CHARACTERISTIC OF SOLAR CELL FOR GUARD LAMP)

  • 강병복;지운석;임중열;김석종;;차인수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 B
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    • pp.1489-1491
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    • 2004
  • A guard lamp system has been installed at the PV positive center, located at Gwangju in Korea. Digital environment that is represented to internet is displacing business way of industry and business achievement way with the fast speed being giving great change on life whole, improve existence business process utilizing internet and Web connection technology, information superhighway to tradition industrialist manufacture and e-transformation's propulsion that wish to maximize productivity and administration efficiency is spread vigorously. In this paper, we wish to accomplish generation equipment's heighten stability and believability through remote monitoring and control of guard lamp system. This paper describes the design of the monitoring system for the sensing data and indirect controlling of the guard lamp system. Most of the conventional monitoring systems depend on the special hardware and software. The essential design of monitoring system is to provide the convenience for the user and the portability for the system. In order for the system to fulfill its requirements, it was designed using Labview GUI facility based on the Windows 2000 environment of IBM PC compatible and Add-oncard based on the TCP/IP Protocol. Advantage of the monitoring system are a personnel expenses curtailment effect, of the place restriction and unmanned system of the generationplants, etc..

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Boost Type ZVS-PWM Chopper-Fed DC-DC Power Converter with Load-Side Auxiliary Resonant Snubber and Its Performance Evaluations

  • Ogura, Koki;Chandhaket, Srawouth;Ahmed, Tarek;Nakaoka, Mutsuo
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제3B권3호
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    • pp.147-154
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    • 2003
  • This paper presents a high-frequency boost type ZVS-PWM chopper-fed DC-DC power converter with a single active auxiliary edge-resonant snubber at the load stage which can be designed for power conditioners such as solar photovoltaic generation, fuel cell generation, battery and super capacitor energy storages. Its principle operation in steady-state is described in addition to a prototype setup. The experimental results of boost type ZVS-PWM chopper proposed here, are evaluated and verified with a practical design model in terms of its switching voltage and current waveforms, the switching v-i trajectory and the temperature performance of IGBT module, the actual power conversion efficiency, and the EMI of radiated and conducted emissions, and then discussed and compared with the hard switching scheme from an experimental point of view. Finally, this paper proposes a practical method to suppress parasitic oscillation due to the active auxiliary resonant switch at ZCS turn-off mode transition with the aid of an additional lossless clamping diode loop, and can be reduced the EMI conducted emission.

박막트랜지스터 응용을 위한 고온 결정화된 다결정실리콘의 특성평가 (The Characteristics of High Temperature Crystallized Poly-Si for Thin Film Transistor Application)

  • 김도영;심명석;서창기;이준신
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권5호
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    • pp.237-241
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    • 2004
  • Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

전자빔 층착으로 제조한 $CuInS_2$ 박막의 구조적 및 광학적 특성 (Structural and optical properties of $CuInS_2$ thin films fabricated by electron-beam evaporation)

  • 박계춘;정운조
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.193-196
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    • 2001
  • Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

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