• Journal of Science and Technology Studies
• /
• v.8 no.2
• /
• pp.57-81
• /
• 2008

This paper reviewed outline of Strategic Niche Management(SNM) and its usefulness and limits as policy tool. SNM is based on Multi Level Perspective(MLP) that traces technological innovation and makes transition of lock-in socio-technical system. This approach is one of systematical then traditional one, market failure approach. SNM had get a attention not only as a analytical frame of technological development, but also tool of radical innovation, although its limits of theoretical and empirical immaturity. SNM could provide a new perspective to analysis and action within urgent needs of alternative innovation policy for aging society, news energy policy for sustainable and disaster policy in danger society.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2000.11a
• /
• pp.416-419
• /
• 2000

A narrow slot in the broad wall of a rectangular waveguide is analysed using a Spatial Network Method[1] which takes account of the waveguide wall thickness. In essence, SNM is used to solve arbitrary shape and materials constant, derived from maxwell's equations to find the tangential electric fields on the upper and lower surfaces of the slot. In this paper, applying to the offset and length[2] which yield a zero equivalent shunt susceptance, analysing single and 4 array slot antenna. The current of the transient analysis shows each the times. Analysed result of SNM is verified by the method of moment and HFSS.

• Journal of Technology Innovation
• /
• v.20 no.2
• /
• pp.161-187
• /
• 2012

Recently, environmentally friendly technology are becoming important due to reconsideration about climate change and environmental pollution. In addition, as well as technical skills and social interaction through an analysis of the nonlinear transition management and policy implementation are emerging. This study of the development of photovoltaic industry in Korea 10 years analyze with strategic niche management (SNM) based on the theoretical and multi-layered perspective (MLP) is used as the analytical framework. Choose the gerverment-support project for niche technology, through a process of quantifying and alnalyze the phase transition to Regime with the numerical method and policy vision, learning effects, and network that key elements of SNM, MLP. Through the analysis of the photovoltaic industry technology-commercialization phase was investigated. This conventional overall and step-by-step model for technical management is proposed to replace exiting linear and narrow method and through the case study its validity was confirmed.

• The Journal of Korean Academic Society of Nursing Education
• /
• v.7 no.1
• /
• pp.113-125
• /
• 2001

The purpose of the study was to determine the convergent validity, discriminant validity and internal consistancy reliability of the social support and family support measuring tool. Two procedures were used : 1) Campbell and Fiske's multitrait-multimethod approach and item total correlation with Chronbach's $\alpha$. The result suggest that SNM, NSSQ, SNM/family, NSSQ/famliy is a valid and a reliable instrument for measuring social support. But PRQ part2 is low in convergent validity. The results further suggest that we have to more attention to a valid and reliable likert type scale for social support.

• Proceedings of the IEEK Conference
• /
• 2000.11a
• /
• pp.493-496
• /
• 2000

This paper presents a slotted leaky waveguide antenna using a rectangular waveguide for mobile reception of DBS (Direct Broadcasting Satellite). A slotted rectangular waveguide in leaky-wave operation can obtain a large beam-tilting angle of 45$^{\circ}$, which is an attractive candidate of mobile DBS receiving antennas because it can be installed horizontally. SNM is used to solve arbitrary shape and materials constant, derived from maxwell's equations. In this paper, analyze cross slot waveguide antenna using SNM. and verify by HFSS.

• Journal of Hydrogen and New Energy
• /
• v.22 no.2
• /
• pp.274-282
• /
• 2011

This paper overviews the concept of the strategic niche management, which emphasises the social aspects of new technologies and calls for relevant government policies for socio-technical transition. Hydrogen energy technologies remain in the niche level, thus the SNM perspective is appropriate to be applied. The reason why, and the way how to see hydrogen as a socio-technical niche are discussed, followed by an analytic argument on hydrogen policies and their SNM characteristics. Final part of the paper deals the design of the socio-technical experiment. It is expected that this paper would contribute to not only policy development but also improving understandings on the socio-technical nature of hydrogen energy of hydrogen community.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1670-1672
• /
• 2001

In compared with air insulated switchgear GIS has a high efficiency and confidence. Insulation method using $SF_6$ gas has a very excellent insulation characteristics for high voltage equipment but has a characteristics that insulation heredity is changed for internal unequal electric field. So analysis of electromagnetic field in GIS is very important basic data for structure design and trouble diagnosis process. In compared with established method, SNM in this paper observes variation of the electromagnetic field with real time and get result very similar to measurement. In order to know the variation of electromagnetic field distribution for transient response for time and position, variations are observed when metal particles are moving fast.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.2
• /
• pp.87-97
• /
• 2013

Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we analyze the impacts of NBTI and PBTI on SRAM $V_{MIN}$, and present a design solution for mitigating the impact of NBTI and PBTI on SRAM $V_{MIN}$. Two different types of SRAM $V_{MIN}$ (SNM-limited $V_{MIN}$ and time-limited $V_{MIN}$) are explained. Simulation results show that SNM-limited $V_{MIN}$ is more sensitive to NBTI while time-limited $V_{MIN}$ is more prone to suffer from PBTI effect. The proposed NBTI/PBTI-aware control of wordline pulse width and woldline voltage improves cell stability, and mitigates the $V_{MIN}$ degradation induced by NBTI/PBTI.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1992.02a
• /
• pp.17-18
• /
• 1992

SIMS is an indispensable surface analysis instrument in trace element depth p profiling because of high detection sensitivity and excellent depth r resolution, however, it requires standard sample to do quantitative analysis d due to matrix effect depending on the species of impurities and sample m matricies and on the sputtering rates. A Among the SNMS technology developed to supply the deficiency, we researched i into CsX+ SNMS which improved the resul t quanti tati vely wi thout any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate a analysis using Si02 layer etc. and adaptability to trace element c concentration analysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented s strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. d dynamic range were investigated. A After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.115-120
• /
• 1992

SIMS is an indispensable surface analysis instrument in trace element depth profiling because of high detection sensitivity and excellent depth resolution, however, it requires a standard sample to do quantitative analysis due to matrix effect depending on the species of impurities and sample matricies and on the sputtering rates. Among the SNMS technology developed to supply the deficiency, we researched into CsX+ SNMS which improved the result quantitatively without any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate analysis using Siq layer etc., and adaptability to trace element concentration alaysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. Also detection limit and dynamic range were investigated. After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.