• Journal of Korea Foundry Society
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• v.22 no.4
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• pp.174-183
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• 2002

Twin-roll process is a relatively new continuous casting process which can produce high-quality strip products directly, and solidification rate can reach $10^3$ to $10^4$ K/s, leading to fine and uniform microstructures with enhanced mechanical properties. The strip casting condition for producing fine Al-Sn alloy strip was obtained experimentally, and defects appearing on the strip was examined. Crack formation and surface quality of the strip was found to depend mainly on process parameters such as melt temperature, roller gap and rolling speed. Sn structure of network type was observed in Al-20Sn and Al-40Sn alloy strips, and cell spacing of Al-40Sn alloy was smaller than that of Al-20Sn. Banding strength of the heat treated specimens increased with increasing of soaking time and temperature, and bonding strength of Al-20Sn alloy was more superior than that of Al-40Sn alloy. However wear resistance of Al-40Sn alloy contained large amount of soft Sn which possess good anti-friction characteristics was superior than that of Al-20Sn alloy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.294-305
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• 1994

The influence of deposition parameter on the electrical, optical andsurface morphology of $SnO_2(:F)$ films prepared by ultrasonic spray deposition using DBDA and $SnCl_4.5H_2O$ as a source material was studied. Resistivity was decreased sharply with increasing F/Sn ratio in solution up to 0.6. Depending on the source material, $SnCl_4.5H_2O$ shows lower resistivity than DBDA. When F/Sn ratio in solution was 1, optical transmittance was higher DBDA than $SnCl_4.5H_2O$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• Journal of Powder Materials
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• v.14 no.5
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• pp.287-291
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• 2007

Oxidation behavior and microstructural characteristics of nano-sized Sn powder were studied. DTA-TG analysis showed that the Sn powder exhibited an endothermic peak at $227^{\circ}C$ and exothermic peak at $560^{\circ}C$ with an increase in weight. Based on the phase diagram consideration of Sn-O system and XRD analysis, it was interpreted that the first peak was for the melting of Sn powder and the second peak resulted from the formation of $SnO_2$ phase. Microstructural observation revealed that the $SnO_2$ powder, heated to $1000^{\circ}C$ under air atmosphere, consisted of agglomerates with large particle size due to the melting of Sn powder during heat treatment. Finally, fine $SnO_2$ powders with an average size of 50nm can be fabricated by controlled heat treatment and ultrasonic milling process.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.97-102
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• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.

• Bulletin of the Korean Chemical Society
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• v.5 no.1
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• pp.3-16
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• 1984

The effect of solvent on the dipole moments for (chloromethyl) stannanes has been investigated by applying EHT calculation for the isomers of trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ and $Cl_n$Sn(Ⅳ) $(CH_2Cl)_{4-n}$, octahedral Sn(Ⅳ)$Cl_42X$ and $Cl_nSn$(Ⅳ)$(CH_2Cl)_{4-n}$ 2X type complexes in dioxane and ethylacetate solutions (X: dioxane or ethylacetate). For Sn(Ⅳ)$Cl_4$ in dioxane solution, the calculated dipole moment for the trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ type complex [isomer (b)] is closer to the experimental dipole moment than octahedral Sn(Ⅳ)$Cl_4X$2X type complexes. This calculated dipole moment suggests that Sn(Ⅳ)$Cl_4X$ may have the trigonal bipyramidal structure in dioxane solution. However, the calculated dipole moment for octahedral $Cl_3$Sn(Ⅳ) ($CH_2$Cl)2X type complex [Isomer (d)], ClSn(Ⅳ)(CH2Cl)32X type complex [Isomer(k)] and Cl2Sn(Ⅳ)(CH2Cl)22X type complex [Isomer(h)] are closer to the experimental dipole moments than other isomers for octahedral complexes and trigonal bipyramidal complexes. Such theoretical results indicate that $Cl_3Sn$(Ⅳ )($CH_2Cl$), ClSn(Ⅳ)$(CH_2Cl)_3$ and $Cl2Sn$(Ⅳ)$(CH_2Cl)_2$ complexes may have octahedral structures, Isomer(d), (k) and (h) in ethylacetate solution, respectively.

• Korean Journal of Metals and Materials
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• v.46 no.9
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• pp.585-592
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• 2008

Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.97-103
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• 2014

Among various lead-free solders, the Sn-58Bi solders have been considered as a highly promising lead-free solders because of its low melting temperature and high tensile strength. However, Sn-58Bi solder has the poor ductility. To enhance the mechanical property of Sn-58Bi solder, epoxy-enhanced Sn-58Bi solders have been studied. This study compared the microstructures and the mechanical properties of Sn-58Bi solder and Sn-58Bi epoxy solder with aging treatment. The solders ball were formed on the printed circuit board (PCB) with organic solderability preservative (OSP) surface finish, and then the joints were aged at 85, 95, 105 and $115^{\circ}C$ for up to 100, 300, 500 and 1000 hours. The shear test was conducted to evaluate the mechanical property of the solder joints. $Cu_6Sn_5$ intermetallic compound (IMC) layer grew with increasing aging time and temperature. The IMC layer for the Sn-58Bi epoxy solder was thicker than that for the Sn-58Bi solder. According to result of shear test, the shear strength of Sn-58Bi epoxy solder was higher than that of Sn-58Bi solder and the shear strength decreased with increasing aging time.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.770-777
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• 2000

Microstructure and mechanical properties of the $Cu_6Sn_5$-dispersed 63Sn-37Pb solder alloy, for which $Cu_6Sn_5$ powders less than $1{\mu\textrm{m}}$ size were fabricated by mechanical alloying, were characterizde and compared with those of the Cu-dispersed solder alloy. Compared to the $Cu_6Sn_5$-dispersed solder alloy, large amount of $Cu_6Sn_5$ and fast growth of $Cu_6Sn_5$ were observed in the Cu-dispersed alloy. The $Cu_6Sn_5$-dispersed solder alloy exhibited lower yield strength, but higher ultimate tensile strength than those of the Cu-dispersed alloy. With dispersion of 1~9 vol% $Cu_6Sn_5$ and Cu, the yield strength increased from 23 MPa and to 40 MPa, respectively. The ultimate tensile strength increased from 34.7 MPa to 45.3 MPa and to 43.1 MPa with dispersion of 5 vol% $Cu_6Sn_5$ and Cu, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.640-644
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• 2000

The microstructure, wettability, shear strength and aging effect of Sn-3.5Ag/Cu and Alloy42 lead-frame solder joints were measured for comparison. In the case of Sn-3.5Ag/Cu, Ag$_3$Sn and Cu$\sub$6/Sn$\sub$5/ phases in the matrix Sn and 1∼2$\mu\textrm{m}$ thick Cu$\sub$6/Sn$\sub$5/ Phase at the interface of solder/lead-frame were formed. In the case of Sn-3.5AAg/A11oy42, only Ag$_3$Sn Phase of low density in the matrix Sn and 0.5∼1.5$\mu\textrm{m}$ thick FeSn$_2$phase at the interface of solder/lead-frame were formed. Comparing to Cu, Alloy42 shear strength of Alloy 42 solder joints was smaller than that of Cu and all declined after aging. After aging at 180$^{\circ}C$ for 1 week, η-Cu$\sub$6/Sn$\sub$5/ layer was formed on Cu lead-frame, while AgSn$_3$ phase in the matrix and thickened FeSn$_2$at the interface were formed on Alloy42 lead-frame.