• Journal of the Korean Magnetics Society
• /
• v.25 no.5
• /
• pp.156-161
• /
• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Journal of the Korean Ceramic Society
• /
• v.49 no.5
• /
• pp.448-453
• /
• 2012

Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.

• Journal of Welding and Joining
• /
• v.31 no.3
• /
• pp.17-21
• /
• 2013

Sn whiskers are one of the serious causes of the failure of electronics. Sn whiskers grow spontaneously from Sn-based, lead-free finished surfaces, even at room temperature. A primary factor of these Sn whiskers growth is compressive stress, which enhances the diffusion of Sn or other elements. The sources of compressive stress are the growth of non-uniform large intermetallic compounds along the interface between the Sn grain boundary and Cu substrate. Recent studies revealed the methods for reducing Sn whisker growth. This paper gives an overview about recent researches for mitigation methods of Sn whisker growth during nearly room temperature storage.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.16 no.4
• /
• pp.32-35
• /
• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Journal of Sensor Science and Technology
• /
• v.14 no.5
• /
• pp.297-301
• /
• 2005

Nanocrystalline SnO and $SnO_{2}$ powder have been prepared by hydrazine method. Sn-Hydrazine complex was formed by the reduction between aqueous $SnCl_{2}$ solution and hydrazine monohydrate. $SnO_{2}$ nano powder was prepared by the decomposition of Sn-Hydrazine complex at $450^{\circ}C$. When NaOH was added to Sn-hydrazine complex, SnO powder with nano-sheet morphology could be prepared. This can be attributed to the role of $OH^{-}$ ion as a reducing agent.

• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.3
• /
• pp.43-47
• /
• 2001

Sn-3Ag-8Bi-5In was developed for the intermediate melting point solder. Although In-contained solder is expensive, its melting point is lower than these of Sn-Ag-Cu alloys. Sn-3Ag-8Bi-5In solder used for this research has a melting range of 188~$204^{\circ}C$. On this study wetting characteristics of Sn-3Ag-8Bi-5In were evaluated in order to investigate its availability as a Pb-free solder. Wettabilities of Sn-37Pb and Sn-3.5Ag solders were also studied to compare these of the Sn-3Ag-8Bi-5In. Experimental results showed that the zero-cross-time and wetting time at $240^{\circ}C$ for the Sn-3Ag-8Bi-5In were 1.1 and 2.2 second respectively. These values are a little better than these of Sn-37Pb and Sn-3.5Ag solders. The equilibrium wetting farce of the Sn-3Ag-8Bi-5In was 5.8 mN at $240^{\circ}C$, and it was tuned out to be a little higher than that of Sn-3.5Ag and lower than that of Sn-37Pb.

• Korean Journal of Materials Research
• /
• v.10 no.9
• /
• pp.636-641
• /
• 2000

The effects of Fe and V content on the characteristics of $\beta$ to $\alpha$ phase transformation for Zr-0.8Sn alloys were studied by optical and transmission electron microscopy. With increasing V content, $\beta{\rightarrow}\alpha+\beta$ transformation temperature decreased, thus allowing the width of $\alpha$-lath to be fine air-cooled Zr-0.8Sn-xV alloys. The width of $\alpha$-lath, however, was slightly increased with Fe content. While the $\beta$ to $\alpha$ transformed microstructures of water-quenched Zr-0.8Sn, Zr-0.8Sn-0.1Fe, Zr-0.8Sn-0.2Fe, Zr-0.8Sn-0.4Fe, Zr-0.8Sn-0.1V and Zr-0.8Sn-0.2V were mainly slipped martensite, that of water-quenched Zr-0.8Sn-0.4V was predominantly twinned martensite. The transition of slipped martensite to twinned martensite in Zr-0.8Sn-Xv was thought to be due to the decrease of $M_S$ temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.5
• /
• pp.191-198
• /
• 2018

SnSb alloy powders with excess Sn or Sb are fabricated by the high energy ball-milling of pure Sn and Sb powders with different Sn/Sb molar ratios, and then their material properties and lithium electrochemical performances are investigated. It is revealed by X-ray diffraction that SnSb alloys are successfully synthesized, and the powder size is decreased via ball-milling. Charge-discharge test using a coin-cell shows that the best result, in terms of the cyclability and the capacity after 50 cycles, comes from the electrode composed of Sn : Sb = 4 : 6, i.e. the capacity of $580mAh\;g^{-1}$ after 50 cycles. When the electrode is composed of Sn : Sb = 3 : 7, however, the capacity is noticeably decreased by the restrained Sn reaction with Li-ion. The pure SnSb alloy powders (Sn : Sb = 5 : 5) results in the second best performance. In the case of Sn-rich SnSb alloys, the initial capacity is relatively high, but the capacity is quickly fading after 20 cycles.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.4
• /
• pp.163-169
• /
• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.2
• /
• pp.39-43
• /
• 2002

The eutectic solder Sn-37Pb and the lead free solder alloys with the compositions of Sn-0.7Cu, Sn-3.5Ag, Sn-3.5Ag-0.75Cu, Sn-2.0Ag-0.7Cu-3.0Bi were applied to the 48 BGA packages, and then it was discussed for the shear strength at the solder joints as the hardness and the composition of the small solder ball. As a result of experiments, the high degree of hardness with the displacement of 0.043 mm was obtained in Sn-2.0Ag-0.7Cu-3.0Bi. The shear strength of the lead free solder was higher than that of Sn-37Pb solder, and it can be obtained the maximum value of about 52% in Sn-2.0Ag-0.7Cu-3.0Bi.