• Journal of information and communication convergence engineering
• /
• v.3 no.4
• /
• pp.167-171
• /
• 2005

In this paper, the resonance characteristics of SMR-type FBAR devices annealed by three different annealing methods are investigated and compared. The resonance characteristics could be effectively improved by the proposed efficient annealing method which optimizes the annealing conditions. It seems very useful for improving the performance of the SMR-type FBAR devices as a cost-effective way.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.2
• /
• pp.320-324
• /
• 2005

In this paper, the resonance characteristics of SMR-type FBAR devices annealed by three different annealing methods are investigated and compared. The resonance characteristics could be effectively improved by the proposed efficient annealing method which can optimize the annealing conditions. It seems very useful for improving the performance of the SMR-type FBAR devices in a cost-effective way.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.2
• /
• pp.159-163
• /
• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1263-1269
• /
• 1999

An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.630-632
• /
• 2003

In this paper, we present the fabrication and performance of FBAR filters with ladder and stacked crystal filter (SCF) types. The structure of the unit resonator in our work is the solidly mounted resonator (SMR) with W/SiO$_2$ multi-layer reflectors, the return loss of of which show -24dB at resonant frequency of -2.0GHz. The $K^2$eff, Q$_{s}$, and Q$_{p}$, indicating the performance of resonator were 3.24%, 6,363 and 6,749 and were calculated for the resonator with the resonance area of 21200${\mu}{\textrm}{m}$$^2$. Based on this unit resonator, FBAR filters with ladder and SCF types were fabricated and compared. The sizes of filters were 800$\times$2000(${\mu}{\textrm}{m}$$^2$) for the ladder type and 600$\times$500(${\mu}{\textrm}{m}$$^2$) for the SCF type.e..

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.7
• /
• pp.308-314
• /
• 2005

The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.2
• /
• pp.164-168
• /
• 2005

Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.377-378
• /
• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.5
• /
• pp.905-909
• /
• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• ETRI Journal
• /
• v.38 no.5
• /
• pp.988-995
• /
• 2016

In this paper, we present a new specific and customized interface tool with parameter identification of Modified Butterworth-Van Dyke models for ladder bulk acoustic wave filters. The aforementioned tool is easy to use and flexible because it allows simulations and reengineering to be conducted in an application. A modular design approach is applied to simplify the extension of the proposed tool for different topologies. The proposed tool was validated using measurements from an aluminum-nitride based ladder BAW filter dedicated to the frequency ranges of the Universal Mobile Telecommunications Service and standards and Wideband Code Division Multiple Access.