• Title/Summary/Keyword: SIO

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A Bibliometric Study on R&D Performance of Ocean Research Institutes (국내.외 해양연구기관 연구성과의 계량적 분석 - 연구생산성 및 국가간 연구협력을 중심으로 -)

  • Han, Jong Yup
    • Journal of Korean Library and Information Science Society
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    • v.44 no.4
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    • pp.209-231
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    • 2013
  • This study is a comparative analysis of R&D performance and research collaboration relationship among ten ocean research institutes in the Republic of Korea and foreign nations through analyzing SCI publications from 2008 to 2012. The result indicated that SIO, WHOI, and NOC had the highest number of publications, while research institutes in East Asian nations including NFRDI, KIOST, IOCAS, and JAMSTEC had the notable growth in publication. In terms of number of publication per researcher, SIO, WHOI, and NOC had relatively high number. In terms of publication per research budget (1 billion KRW), number of publication was high in the order of IOCAS, NOC, GEOMAR, SIO. The number of Citations Per Publications (CPP) was high among WHOI, SIO, NOC, GEOMAR, JAMSTEC, and IFREMER, which are North American, European and Japanese institutes. The average Impact Factor (IF) of journal submission per publication for IFREMER, KIOST and JAMSTEC was relatively increasing, while the number was fluctuating in other institutes. The analysis of research collaboration among institutes around the globe showed that the collaboration in Asia was relatively closed, whereas it was more open in Europe. In the case of Europe and Asia, higher number of research collaboration among nations also increased the quality of submitted articles.

The Design and Implementation of the SRTPIO Module for a Real-time Multimedia Data Transport (실시간 멀티미디어 데이타 전송을 위한 SRTPIO 모듈 설계 및 구현)

  • Nam, Sang-Jun;Lee, Byung-Rae;Kim, Tai-Woo;Kim, Tai-Yun
    • Journal of KIISE:Information Networking
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    • v.28 no.4
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    • pp.621-630
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    • 2001
  • Recently, users' demands for multimedia service are increasing. But, server systems offer inefficient multimedia data service to users. In this paper, to transport multimedia data in the server system more efficiently, we propose the SRTPIO(Special RTP Input/Output) module that process the RTP(Real-time Transport Protocol) data in the kernel with the SIO(Special Input/Output) Mechanism. The SIO mechanism improve a transfer speed because it reduces overheads associated with data copying and context-switching between the user mode and the kernel mode occured in general server system in the kernel-level. The SRTPIO module, integrating the SIO mechanism and the RTP data processing in the kernel, support efficient multimedia data transfer architecture.

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Study on the Bonding Interface in Directly Bonded Si-Si and Si-$SiO_2$ Si Wafer Pairs (직접 접합된 Si-Si, Si-$SiO_2$/Si기판쌍의 접합 계면에 관한 연구)

  • Ju, Byeong-Gwon;Bang, Jun-Ho;Lee, Yun-Hui;Cha, Gyun-Hyeon;O, Myeong-Hwan
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.127-135
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    • 1994
  • We investigated the bonding interfaces of directly-bonded Si-Si and $Si-Sio_{2}$/Si wafer pairs. By the angle lapping-delineation, anisotropic etching, and (FIR)-TEM observation methods, we studied on the interface defects and the transient region originated from the interface stress, the various types of voids, the formation and stability of interfacial oxide. We also compared the interface image of the bonded $Si-Sio_{2}$ with that of a typically grown $Si-Sio_{2}$.

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Study the effect of machining process and Nano Sio2 on GFRP mechanical performances

  • Afzali, Mohammad;Rostamiyan, Yasser
    • Structural Engineering and Mechanics
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    • v.76 no.2
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    • pp.175-191
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    • 2020
  • In this study, the effect of Nano silica (SiO2) on the buckling strength of the glass fiber reinforced laminates containing the machining process causes holes were investigated. The tests have been applied on two status milled and non-milled. To promote the mechanical behavior of the fiber-reinforced glass epoxy-based composites, Nano sio2 was added to the matrix to improve and gradation. Nano sio2 is chosen because of flexibility and high mechanical features; the effect of Nanoparticles on surface serenity has been studied. Thus the effect of Nanoparticles on crack growth and machining process and delamination caused by machining has been studied. We can also imply that many machining factors are essential: feed rate, thrust force, and spindle speed. Also, feed rate and spindle speed were studied in constant values, that the thrust forces were studied as the main factor caused residual stress. Moreover, entrance forces were measured by local calibrated load cells on machining devices. The results showed that the buckling load of milled laminates had been increased by about 50% with adding 2 wt% of silica in comparison with the neat damaged laminates while adding more contents caused adverse effects. Also, with a comparison of two milling tools, the cylindrical radius-end tool had less destructive effects on specimens.

Design and Implementation of I/O Sub-System based on Multimedia Packet Transfer (멀티미디어 패킷 전송에 적합한 I/O 서브시스템 설계 및 구현)

  • Nam, Sang-Jun;Lee, Byung-Rae;Kim, Tai-Yun
    • Proceedings of the Korea Information Processing Society Conference
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    • 2000.10b
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    • pp.1145-1148
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    • 2000
  • 최근 멀티미디어 데이터에 대한 요구는 사용자가 증가함에 따라 데이터 양도 증가하고 있다. 이에 반해 서버시스템이나 네트워크의 대역폭은 이러한 서비스 요구를 충족시키기에 미흡하다. 본 논문에서는 리눅스 환경에서 일반적인 UDP(User Datagram Protocol) 전송 메커니즘을 SIO(Special Input/Output) 시스템 콜을 커널 내부에 추가하였다. UDP전송을 커널 내부에서 수행함으로써, 사용자 모드와 커널 모드사이의 데이터 복사의 횟수와 문맥 교환을 줄였다. 커널 내부에서 수행하게 SIO 시스템 콜을 설계하고 구현함으로써 일반적인 리눅스 환경보다 약 31%의 성능향상을 보았다. 본 논문에서는 SIO와 같은 효과적인 커널 내부의 전송 시스템 콜을 사용함으로써 멀티미디어 관련 서버에 적응할 수 있도록 하였다.

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플라스틱 기판위의 buffer layer와 island density가 stress분포에 미치는 영향 분석

  • Han, Jin-Woo;Seo, Dae-Shik;Kim, Yong-Hoon;Moon, Dae-Gyu;Kim, Won-Keun;Han, Jeong-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1089-1091
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    • 2004
  • 본 연구에서는 fiexible 기판에 e-beam으로 sio2를 증착 한 후 R.F 스퍼터링으로 ito 박막을 증착한 경우와 polyimide를 스핀 코팅한 후 ito를 증착한 경우로 나누어서 실험 하였다. SIO2 박막은 ITO증착을 위해 증착온도 $100^{\circ}C$에서 증착 하였으며 ITO 박막은 투과율을 향상 시키기 위해서 Ar/O2 혼합가스를 이용하였다. SIO2 와 ITO 박막의 두께는 각각 500nm, 200nm로 증착하였다. Stress 분포는 bending test를 통해 발생하는 island의 crackt 수로 측정 하였다. 그 결과 crack 분포는 buffer layer의 young's modulus 크기와 island density 영향이 지배적임을 확인 하였다.

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A study of the crystallinity and microstructure of the $Si_{1-X}Ge_X$ alloys deposited on the $SiO_2$at various temperatures ($SiO_2$위에 증착된 $Si_{1-X}Ge_X$합금의 증착온도 변화에 따른 결정성 및 미세구조에 관한 연구)

  • Kim, Hong-Seung;Lee, Jeong-Yong;Lee, Seung-Chang;Gang, Sang-Won
    • Korean Journal of Materials Research
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    • v.4 no.4
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    • pp.416-427
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    • 1994
  • The changes of crystallinity and microstructure and the $Si_{1-x}Ge_x/Sio_2$ interfaces of $Si_{1-x}Ge_x$ alloys deposited on amorphous $SiO_{2}$ were studied as a function of deposition temperature. The crystallinity, microstructure, and compositional uniformity of $Si_{1-x}Ge_x$ alloys deposited on the SiOl at different temperature were investigated by X-ray diffraction and transmission electron microscopy. And $Si_{1-x}Ge_x/Sio_2$ interface were investigated by high-resolution transmission electron microscopy. The $Si_{0.7}Ge_{0.3}/Sio_2$ films were deposited on amorphous $SiO_{2}$ at $300^{\circ}C,400^{\circ}C,500^{\circ}C,600^{\circ}C,$ and $700^{\circ}C$ by Si-MBE. In the film deposited at $300^{\circ}C$, only amorphous phase were observed. In the film deposited at $400^{\circ}C$, both amorphous and polycrystalline films were observed. Both phases were deposited simultaneously, but, at initial film growth, amorphous phase prevailed over polycrystalline phase. As the film thickness increased, the fraction of polycrystalline phase increased. At $500^{\circ}C$, thin amorphous layer was observed at lOnm from $SiO_{2}$ surface. In the films deposited at higher than $600^{\circ}C$, only crystalline phase were observed. Polycrystalline films had columnar structure. Compositional uniformity for deposited films were good regardless of deposition temperature. The interfaces of $Si_{1-x}Ge_x/Sio_2$ were flat, whatever polycrystal or amorphous was deposited on $SiO_{2}$.

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