• 제목/요약/키워드: SIMS

검색결과 484건 처리시간 0.029초

A New Approach to Surface Imaging by Nano Secondary Ion Mass Spectrometry

  • 홍태은;변미랑;장유진;김종필;정의덕
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.105.1-105.1
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    • 2016
  • Many of the complex materials developed today derive their unique properties from the presence of multiple phases or from local variations in elemental concentration. Simply performing analysis of the bulk materials is not sufficient to achieve a true understanding of their physical and chemical natures. Secondary ion mass spectrometer (SIMS) has met with a great deal of success in material characterization. The basis of SIMS is the use of a focused ion beam to erode sample atoms from the selected region. The atoms undergo a charge exchange with their local environment, resulting in their conversion to positive and negative secondary ions. The mass spectrometric analysis of these secondary ions is a robust method capable of identifying elemental distribution from hydrogen to uranium with detectability of the parts per million (ppm) or parts per billion (ppb) in atomic range. Nano secondary ion mass spectrometer (Nano SIMS, Cameca Nano-SIMS 50) equipped with the reactive ion such as a cesium gun and duoplasmatron gun has a spatial resolution of 50 nm which is much smaller than other SIMS. Therefore, Nano SIMS is a very valuable tool to map the spatial distribution of elements on the surface of various materials In this talk, the surface imaging applications of Nano SIMS in KBSI will be presented.

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SIMS Protein imaging with nanoparticle tagged antibody for simultaneous omic imaging

  • 이선영;문대원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.230.1-230.1
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    • 2015
  • One of the major problems of biological ToF-SIMS imaging is the lack of protein and peptide imaging. Most of biological story telling is mianly based on proteins. The biological implication of lipid ToF-SIMS imaging would be much higher if protein imaging is provided together. Utilizing high secondary ion yields of metals, proteins can be ToF-SIMS imaged with nanoparticle tagged proteins. Nanoparticles such as Fe3O4, SiO2, PbS were used for imaing NeuN, MCH, Orexin A, ${\alpha}$ synucline, TH(Tryosine Hydroxylase) in mouse tissues with a spatial resolution of ${\sim}2{\mu}m$ using a TOF-SIMS. Lipids and neurotransmitters images obtained simultaneously with protein images were overlayed for more deeper understanding of neurobiology, which is not allowed by any other bioimaging technqiues. The protein images from TOF-SIMS were compared with confocal fluorescence microscopy and NanoSIMS images. A new sample preparation method for imaging single cell membranes in a tissue using the vibrotome technique to prepare a tissue slice without any fixation and freeze drying will be also presented briefly for Hippocampus and Hypothalamus tissues.

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학교정보관리시스템의 효용성 제고 - 제 문제와 개선방안 - (Usability Improvements in the School Information Management System - Issues and Suggestions -)

  • 김창용;배재학
    • 산업경영시스템학회지
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    • 제28권3호
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    • pp.42-57
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    • 2005
  • The National Education Information System(NEIS) has been utilized in primary and secondary schools. In this paper, we consider the NEIS should be used not only for educational administration affairs, but also for a lifelong management of national human resource. The current School Information Management System(SIMS), including the NEIS, is unsatisfactory due to the insufficiency of actual field suitability and end-user's conveniency. To this, we have devised improvements of the SIMS in the seven problem areas: ) The core business process of the school should be analyzed sufficiently and reflected in SIMS. (2) We should fully utilize groupware functions which activate the learning organization. (3) We might apply and use the CRM techniques of enterprises in SIMS. (4) The SIMS should be easy to make necessary school assessment data. (5) We should complement functions of the SIMS for a lifelong healthcare information management of national human resource. (6) The SIMS should support the school lunch management. (7) We should bring BOM and work-flow concepts into the SIMS.

비휘발성 기억소자를 위한 NO/$N_2O$ 질화산화막과 재산화 질화산화막의 특성에 관한 연구 (Characteristics of the NO/$N_2O$ Nitrided Oxide and Reoxidized Nitrided Oxide for NVSM)

  • 이상은;서춘원;서광열
    • 한국진공학회지
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    • 제10권3호
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    • pp.328-334
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    • 2001
  • 초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 NO/$N_2$O 질화산화막 및 재산화질화산화막의 특성을 D-SIMS(dynamic secondary ion mass spectrometry), ToF-SIMS(time-of-flight secondary ion mass spectrometry), XPS(x-ray Photoelectron spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2$O 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록 하였다. D-SIMS 분석결과 질소의 중심은 초기산화막 계면에 존재하며 열처리 공정에서 NO에 비해서 $N_2$O의 경우 질소의 분포는 넓게 나타났다. 질화산화막내 존재하는 질소의 상태를 조사하기 위하여 ToF-SIMS 및 XPS 분석을 수행한 결과 SiON, $Si_2$NO의 결합이 주도적이며 D-SIMS에서 조사된 질소의 중심은 SiON 결합에 기인한 것으로 예상된다. 재산화막/실리콘 계면근처에 존재하는 질소는 $Si_2$NO 결합형태로 나타나며 이는 ToF-SIMS로 얻은 SiN 및 $Si_2$NO 결합종의 분포와 일치하였다.

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SIMS와 GDMS를 이용한 구리와 탄탈 박막내의 주요불순물 분석 (Analysis of dominant impurities in Cu and Ta films using SIMS and GDMS)

  • 임재원
    • 한국진공학회지
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    • 제13권2호
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    • pp.79-85
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    • 2004
  • 본 논문은 구리와 탄탈 박막내에 불순물로써 함유되기 쉬운 수소와 탄소, 그리고 산소 원소에 대해 이차이온 질량분석기(secondary ion mass spectrometry)와 글로우방전 질량분석기(glow discharge mass spectrometry)를 이용하여 분석하였고, 이들의 분석결과에 대해서 고찰하였다. 구리와 탄탈 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V(구리 박막) 또는 -125 V(탄탈 박막)의 기판바이어스를 걸은 상태에서 증착하였다. 세슘 이온빔을 이용하여 분석한 SIMS 결과에서, 기판 바이어스를 걸지 않은 경우, 상당히 많은 피크들이 강하게 관찰되었는데 이는 위의 주요불순물들의 결합에 의한 상태로 검출된 것으로 이들 주요불순물들의 조합에 의해 가능한 질량번호를 산출하여 SIMS 결과의 모든 피크들을 해석할 수 있었다. 또한, 박막 내의 주요불순물들의 정량적인 GDMS 분석에 의해 SIMS 결과와의 일치성을 확인할 수 있었다.

Conversion from SIMS depth profiling to compositional depth profiling of multi-layer films

  • Jang, Jong-Shik;Hwang, Hye-Hyen;Kang, Hee-Jae;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.347-347
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    • 2011
  • Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

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Quantification of $Cu(In_xGa_{1-x})Se_2$ Solar Cell by SIMS

  • Jang, Jong-Shik;Hwang, Hye-Hyen;Kang, Hee-Jae;Min, Hyung-Sik;Han, Myung-Sub;Suh, Jung-Ki;Cho, Kyung-Haeng;Chung, Yong-Duck;Kim, Je-Ha;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.275-275
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    • 2012
  • The relative composition of $Cu(InGa)Se_2$ solar cells is one of the most important measurement issues. However, quantitative analysis of multi-component alloy films is difficult by surface analysis methods due to severe matrix effect. In this study, quantitative depth profiling analysis of CIGS films was investigated by secondary ion mass spectrometry (SIMS). The compositions were measured by SIMS using the alloy reference relative sensitivity factors derived from the certified compositions and the total counting numbers of each element. The compositions measured by SIMS were linearly proportional to those by inductively coupled plasma-mass spectrometry (ICP-MS) using isotope dilution method. In this study, the quantification measured by ICP-MS method is compared with the composition calculated by SIMS depth profiles with AR-RSFs obtained from the reference. The SIMS depth profile of CIGS thin films according to the manufacturing condition was converted into compositional depth profile.

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Generation of Water Droplet Ion Beam for ToF-SIMS Analysis

  • Myoung Choul Choi;Ji Young Baek;Aram Hong;Jae Yeong Eo;Chang Min Choi
    • Mass Spectrometry Letters
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    • 제14권4호
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    • pp.147-152
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    • 2023
  • The increasing demand for two-dimensional imaging analysis using optical or electronic microscopic techniques has led to an increase in the use of simple one-dimensional and two-dimensional mass spectrometry imaging. Among these imaging methods, secondary-ion mass spectrometry (SIMS) has the best spatial resolution using a primary ion beam with a relatively insignificant beam diameter. Until recently, SIMS, which uses high-energy primary ion beams, has not been used to analyze molecules. However, owing to the development of cluster ion beams, it has been actively used to analyze various organic molecules from the surface. Researchers and commercial SIMS companies are developing cluster ion beams to analyze biological samples, including amino acids, peptides, and proteins. In this study, a water droplet ion beam for surface analysis was realized. Water droplets ions were generated via electrospraying in a vacuum without desolvation. The generated ions were accelerated at an energy of 10 keV and collided with the target sample, and secondary ion mass spectra were obtained for the generated ions using ToF-SIMS. Thus, the proposed water droplet ion-beam device showed potential applicability as a primary ion beam in SIMS.

Decision of Interface and Depth Scale Calibration of Multilayer Films by SIMS Depth Profiling

  • Hwang, Hye-Hyun;Jang, Jong-Shik;Kang, Hee-Jae;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.274-274
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    • 2012
  • In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

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Black Cr 태양 선택흡수막의 SIMS 연구 (SIMS Investigation of Black Cr Solar Selective Coatings)

  • 이길동
    • 한국태양에너지학회 논문집
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    • 제34권4호
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    • pp.39-44
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    • 2014
  • The elemental composition of electro-deposited black Cr solar selective coatings before and after heating in air by using secondary ion mass spectrometry (SIMS) was investigated for optical property analysis. In addition, black Cr selective coating exposed by solar radiation for 5 months was compared with heated sample. SIMS investigation shows that $OH^+$ bearing ions were related to a near surface region of CrOH and CrO compound. The optical degradation of this coating after heating at $500^{\circ}C$ reveals that diffusion of the Cu and Ni elements in substrate material, the chemical interactions adjacent to the interface, and the interface width broadening.