• 센서학회지
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• 제24권1호
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• pp.35-40
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• 2015

Electrospinning method has easy preparation of nanofibers with a simple and versatile technique. Electrospun nanofiber is widely used by the simple approach and have great potentials in the numerous applicaitons of medicine, photonics, catalysts, sensors, etc. including advantage of their specific characteristics such as large surface to volume ratio. This paper focused on the fabrication of cobalt electrospun nanofibrer for applications such as electronic, optical and mechanical devices by metal based material. We fabricated cobalt nanofibers on aluminum foil by an electrospinning method. The electrospinning process was performed at a high voltage, 8 kV. The distance between the needle tip and the solution surface in the bath was 5 cm. The PVB - cobalt based nitrate solution was filled in a 10 mL syringe connected to a 22 gauge needle. We confirmed electrospun cobalt nanofiber after annealing process by SIMS (Secondary Ion Mass Spectrometry) analysis. The concept design, fabrication and results of mapping measurements are reported.

• 한국세라믹학회지
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• 제38권9호
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• pp.782-786
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• 2001

Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

• 한국산학기술학회논문지
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• 제4권1호
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• pp.17-21
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• 2003

산업용 뿐만 아니라 보석용으로 가치가 있는 합성 및 천연사파이어를 인위적으로 청색발색효과를 높이기 위해 확산 처리한 경우, 종래 육안감정에 의해서는 확산처리 유무 및 불순물 주입 정도에 따른 광학적 특성의 감정이 어려운 문제가 있었다. 비파괴적이고 빠른 시간안에 정량적인 분석을 위해 FTIR(Fourier transformation infra-red) 분석을 이용하여 해결할 수 있음을 확인하였다. 기존의 고가 SIMS(secondary ion mass spectrometry) 등 고가 진공분석장비에 비하여 획기적으로 3분 이내의 분석을 통하여 경제적, 비파괴적인 분석이 가능하여, 관련 업체에 도입되는 경우 제안된 전용 FTIR 설비를 이용하여 처리사파이어의 정밀감정이 가능하였다.

• 한국표면공학회지
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• 제50권3호
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• 한국표면공학회지
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• 제51권2호
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• pp.110-115
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• 2018

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.397-397
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• 2010

Bone is considered as hierarchically organized biocomposites of organic (collagen) and inorganic (hydroxyapatite) materials. The precise structural dependence between hydroxyapatite (HAp, $Ca_{10}(PO_4)_6(OH)_2)$ crystals and collagen fibril is critical to unique characteristics of bone. To meet those conditions and obtain optimal properties, it is essential to understand and control the initial growth mechanisms of hydroxyapatite at the molecular level, such as other nano-structured materials. In this study, collagen fibrils were prepared by adsorbing native type I collagen molecules onto hydrophobic surface. Hydrophobicity was introduced on the Si wafer surface by using PECVD (plasma enhanced chemical vapor deposition) method and cyclohexane as a precursor. Biomimetic nucleation and growth of HAp on the self-assembled collagen nanofibrils were occurred through incubation of the sample in SBF (simulated body fluid). Chemical and morphological evolution of HAp nanocrystals was investigated by surface-sensitive analytical techniques such as ToF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) and AFM (Atomic Force Microscopy) in the early growth stages (< 24 hrs). The very initial stages (< 12 hrs) of mineralization could be clearly demonstrated by ToF-SIMS chemical mapping of surface. In addition to ToF-SIMS and AFM measurement, scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction analysis were conducted to characterize the HAp layer in the late stages. This study is of great importance in the growth of real bone-like materials with a structure analogous to that of natural bones and the development of biomimetic nanomaterials.

• 한국재료학회지
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• 제1권4호
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• pp.214-220
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• 1991

실리콘 산화막을 $CHF_{3/}C_2F_6$ 혼합가스를 사용하여 반응성이온 건식식각을 행할 때 실리콘 표면에 형성되는 잔류막과 손상층을 X-선 광전자 분광기(XPS)와 이차이온 질량 분석기(SIMS)를 사용, 연구하였다. 실리콘, 탄소, 산소 및 불소의 angle-resolved XPS분석기술을 이용한 비파괴적 화학결합상태의 깊이분포 분석을 통하여 잔류막의 표면부에 O-F 결합이 존재하며 잔류막은 주로 탄소와 불소의 결합체인 C-F 플리머로 구성되어져 있고 Si-O, Si-C 및 Si-F 결합 등이 존재함을 알았다. 손상층은 실리콘 표면에서 약 60nm 깊이까지 탄소와 불소의 침투에 의해 형성되어져 있음을 알았다.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• 전자공학회논문지A
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• 제30A권1호
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• 한국진공학회지
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• 제5권1호
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• pp.39-47
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• 1996

The segregation of S in electrotransport-purified polycrystaline $\alpha$-Ti and Ti-aluminide alloys has been studied by Auger electron spectroscopy(AES), Ion scattering spectroscopy(ISS) and Secondary ion mass spectrometry(SIMS) in the temperature range extending from 20 to $1000^{\circ}C$. The chemisorbed oxygen and carbon on Ti were observed to disappear at T>$400^{\circ}C$ after which the S signal increased to levels approaching 0.5 monolayer. At lower temperatures the presence of the surface oxygen and carbon appeared to inhibit the segregation, presumably because there were no available surfaces sites for the S emerging from the bulk. The activation energy for the S segregation in pure polycrystaline Ti was determined to be 16.7 kcal/mol, which, when compared to S segretation from single-crystal Ti, is quite small and suggests grain boundary or defect diffusion segregation kinetics. In the Ti-aluminide alloys, the presence of Al appeared to enhance the retention of surface oxygen which, in turn, substantially reduced the S segretation. The $\gamma$ alloy, with its high Al content, exhibited the greatest retention of surface oxygen and the smallest quantity of the S segregation(T$\simeq1000^{\circ}C$).