• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.845-848
• /
• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

• Korean Journal of Materials Research
• /
• v.23 no.1
• /
• pp.7-12
• /
• 2013

The $Cu_2ZnSnS_4$ (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of $300^{\circ}C$ without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to $1{\mu}m$. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.3
• /
• pp.183-187
• /
• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.355-355
• /
• 2016

There has been an explosive development of nanocrystal (NC) synthesis and application due to their composition-dependent specific properties. Despite the composition, shape, and size of NCs foremost determine their physicochemical properties, the surface state and molecule conjugation also drastically change their characteristics. To make practical use of NCs, it is a prerequisite to understand the NC surface state and the degree to which they have been modified because the reaction occurs on the interface between the NCs and the surrounding medium. We report in here an analysis method to identify conjugated ligands and their binding states on semiconductor nanocrystals based on their molecular information. Surface science techniques, such as time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and FT-IR spectroscopy, are adopted based on the micro-aggregated sampling method. Typical trioctylphosphine oxide-based synthesis methods of CdSe/ZnS quantum dots (QDs) have been criticized because of the peculiar effects of impurities on the synthesis processes. Since the ToF-SIMS technique provides molecular composition evidence on the existence of certain ligands, we were able to clearly identify the n-octylphosphonic acid (OPA) as a surface ligand on CdSe/ZnS QDs. Furthermore, the complementary use of the ToF-SIMS technique with the FT-IR technique could reveals the OPA ligands' binding state as bidentate complexes.

• Journal of the Mineralogical Society of Korea
• /
• v.18 no.2
• /
• pp.127-134
• /
• 2005

Although the bulk composition of materials is one of the major considerations in extractive metallurgy and environmental science, surface composition and topography control surface reactivity, and consequently play a major role in determining metallurgical phenomena and pollution by heavy metals and organics. An understanding of interaction mechanisms of different chemical species at the mineral surface in an aqueous media is very important in natural environment and metallurgical processing. X-ray photoelectron spectroscopy (XPS) has been used as an ex-situ analytical technique, but the material to be analyzed can be any size from $100\;{\mu}m$ up to about 1 cm. It can also measure mixed solids powders, but it is impossible to ascertain the original source of resulting x-ray signals where they were emitted from, since it radiates and scans the macro sample surface area. The study demonstrated the ability of TOF-SIMS to detect individual organic species on the surfaces of mineral particles from plant samples and showed that the TOF-SIMS techniques provides an excellent tool for establishing the surface compositions of mineral grains and relative concentrations of chemicals on mineral species.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.18 no.4
• /
• pp.608-613
• /
• 2017

We proposed a pyrometallurgical process to achieve gold alloy with an Au content of more than 80wt% from low grade (<35wt%) gold alloys. We performed the heat treatment at a temperature of $1200^{\circ}C$ for 5 hrs using Au35wt%-Ag5wt%-Cu60wt% gold alloys mixed with 1/2 weighed PbO and CaO flux by varying the ratio of PbO/(PbO+CaO) from 0 to 1. We investigated the change in content of the samples with energy dispersive X-ray spectroscopy (EDS) and time of flight secondary ion mass spectrometry (ToF-SIMS). The EDS results showed that the Au content increased from 35.0wt% in the PbO-only sample to 86.7wt% (in the PbO/(PbO+CaO) 1:1 sample), while the other samples achieved more that 84wt%. In addition, the 2/3 flux ratio sample showed the lowest Ag loss into the flux. In the ToF-SIMS results, the PbO only and CaO only fluxes had Au+ peak intensities of 349 and 37, respectively. Although the CaO-only flux might be more favorable considering the loss of Au into the flux, we concluded that the amount of Au lost into the flux could be ignored. Our results imply that that the pyrometallurgical process using a mixed flux is an effective hydrometallurgical process.

• Journal of the Korean Vacuum Society
• /
• v.13 no.1
• /
• pp.1-8
• /
• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Korean Journal of Materials Research
• /
• v.29 no.2
• /
• pp.97-105
• /
• 2019

In the current steel structures of high-rise buildings, high heat input welding techniques are used to improve productivity in the construction industry. Under the high heat input welding, however, the microstructures of the weld metal (WM) and heat-affected zone (HAZ) coarsen, resulting in the deterioration of impact toughness. This study focuses mainly on the effects of fine TiN precipitates dispersed in steel plates and B addition in welding materials on grain refinement of the HAZ microstructure under submerged arc welding (SAW) with a high heat input of 200 kJ/cm. The study reveals that, different from that in conventional steel, the ${\gamma}$ grain coarsening is notably retarded in the coarse grain HAZ (CGHAZ) of a newly developed steel with TiN precipitates below 70 nm in size even under the high heat input welding, and the refinement of HAZ microstructure is confirmed to have improved impact toughness. Furthermore, energy dispersive spectroscopy (EDS) and secondary-ion mass spectrometry (SIMS) analyses demonstrate that B is was identified at the interface of TiN in CGHAZ. It is likely that B atoms in the WM are diffused to CGHAZ and are segregated at the outer part of undissolved TiN, which contributes partly to a further grain refinement, and consequently, improved mechanical properties are achieved.

• Korean Journal of Veterinary Service
• /
• v.35 no.3
• /
• pp.197-205
• /
• 2012

Despite of a long history of the sulfur on the disease healing effect, there were limited ways of applying sulfur to animal and human. We have developed the detoxified sulfur (non toxic sulfur) method to make it practical and mass production possible through laboring for many years. This study practiced scanning electron microscope (SEM), Energy dispersive X-ray spectrometer (EDS) and secondary ion mass spectrometry (SIMS) analysis to investigate the physicochemical aspect of detoxified sulfur. We also performed the oral toxicity experiment to mice, and anti-bacterial test of the detoxified sulfur. Based on the SEM, EDS and SIMS results, the united particles in the mass form with the similar component intensity with the raw sulfur were observed, and hydrogen sulfide ion (HS-) component which is regarded as a toxic matter, was decreased after detoxification. Indeed, toxicity test on the mice (10 males, 10 females) showed no clinical, histopathological changes with the 5 times amount (2,500 mg/kg) of the actual doses. However, the male-mice showed decreased in body weight by 23.6%, 24.3% in the 7th, 14th day, respectively, after detoxified sulfur. Moreover, the female-mice administered the detoxified sulfur showed decreased in body weight by 28.7% (P<0.05) than that in the control group on the 14th day. The result of antibacterial test on the detoxified sulfur showed antibacterial effect (27%) to inhibit the growth of Staphylococcus aureus. It is shown that detoxified sulfur can be used as feed additive and has an affect on the farm perfomance.

• Applied Chemistry for Engineering
• /
• v.30 no.4
• /
• pp.499-503
• /
• 2019

Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.