• Title/Summary/Keyword: SIMS(Secondary ion Mass Spectrometry)

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Investigation of Nanostructures in Homopolymer and Copolymer Films by Surface Techniques

  • Kang, Minhwa;Lee, Jihye;Lee, Yeonhee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.276-276
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    • 2013
  • Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and Atomic Force Microscopy (AFM) are the useful instruments to measure nanostructures of material surfaces. Surface pattern formation in blending homopolymer and diblock copolymer films was investigated as a function of film thickness and annealing conditions. In this study, surface structures of blending homopolymer [deuterated polystyrene (Mn 20,000), poly (methyl methacrylate) (Mn 18,000)] and diblock copolymer [Poly (deuteratedstyrene(d8)-b-methyl methacrylate) (Mn 19,500-18,100)] films were observed. The AFM result indicated that the nanostructures and film thickness depended on temperature, concentration and solvent. TOF-SIMS depth profiling was obtained for the lamellar morphology of symmetric dPS-b-PMMA which is found to orient parallel to the surface of the substrate. Elemental and molecular depth profiles measured in the negative ion mode by a Cs+ primary ion beam demonstrate variations in hydrogen, deuterium, carbon, oxygen, hydrocarbons and deuterated hydrocarbons within the diblock copolymer according to the depth.

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Label-free NanoBio Imaging for New Biology and Medical Science

  • Moon, Dae Won
    • Applied Science and Convergence Technology
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    • v.24 no.6
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    • pp.203-214
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    • 2015
  • We have been developing a new label-free nanobio imaging platform using non-linear optics such as Coherent Anti-Stokes Raman Spectroscopy (CARS) and ion beam techniques based on sputtering and scattering such as Secondary Ion Mass Spectrometry (SIMS) and Medium Energy Ion Scattering Spectroscopy (MEIS), which have been widely used for atomic and molecular level analysis of semiconductors and nanomaterials. To apply techniques developed for semiconductors and nanomaterials for biomedical applications, the convergence of nano-analysis and biology were tried. Our activities on label-free nanobio imaging during the last decade are summarized in this review about non-linear optical 3D imaging, ellipsometric interface imaging, SIMS imaging, and TOF-MEIS nano analysis for cardiovascular tissues, collagen thin films, peptides on microarray, nanoparticles, and cell adhesion studies and finally the present snapshot of nanobio imaging and the future prospect are described.

Characterization of Surface Films Formed Prior to Bulk Reduction of Lithium in Rigorously Dried Propylene Carbonate Solutions

  • Chang, Seok Gyun;Lee, Hyo Jung;Gang, Heon;Park, Su Mun
    • Bulletin of the Korean Chemical Society
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    • v.22 no.5
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    • pp.481-487
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    • 2001
  • Surface films formed prior to bulk reduction of lithium have been studied at gold, platinum, and copper electrodes in rigorously dried propylene carbonate solutions using electrochemical quartz crystal microbalance (EQCM) and secondary ion mass spectrometry experiments. The results indicate that the passive film formation takes place at a potential as positive as about 2.0 V vs. Li/Li+ , and the passive film thus formed in this potential region is thicker than a monolayer. Quantitative analysis of the EQCM results indicates that electrogenerated lithium reacts with solvent molecules to produce a passive film consisting of lithium carbonate and other compounds of larger molecular weights. The presence of lithium carbonate is verified by SIMS, whereas the lithium compounds of low molecular weights, including lithium hydroxide and oxide, are not detected. Further lithium reduction takes place underneath the passive film at potentials lower than 1.2 V with a voltammetric current peak at about 0.6 V.

Surface Mass Imaging Technique for Nano-Surface Analysis

  • Lee, Tae Geol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.113-114
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    • 2013
  • Time-of-flight secondary ion mass spectrometry (TOF-SIMS) imaging is a powerful technique for producing chemical images of small biomolecules (ex. metabolites, lipids, peptides) "as received" because of its high molecular specificity, high surface sensitivity, and submicron spatial resolution. In addition, matrix-assisted laser desorption and ionization time-of-flight (MALDI-TOF) imaging is an essential technique for producing chemical images of large biomolecules (ex. genes and proteins). For this talk, we will show that label-free mass imaging technique can be a platform technology for biomedical studies such as early detection/diagnostics, accurate histologic diagnosis, prediction of clinical outcome, stem cell therapy, biosensors, nanomedicine and drug screening [1-7].

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Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_4$/Ar Plasma ($CF_4$/Ar 가스 플라즈마를 이용한 $YMnO_3$ 박막의 식각 반응연구)

  • 김동표;김창일;이철인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.959-964
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    • 2001
  • We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

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Study of Thermal Diffusion in the Copper Wire Using SIMS Depth Profiling (이차이온질량분석기의 깊이 분포도를 이용한 동선의 열적 확산에 대한 연구)

  • Park, Jong-Jin;Hong, Tae-Eun;Cho, Young-Jin;Seo, Young-Il;Moon, Byung-Sun;Park, Jong-Chan;Pak, Hyuk-Kyu;Lee, Jeong-Sik
    • Fire Science and Engineering
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    • v.22 no.5
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    • pp.43-47
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    • 2008
  • Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

SIMS Investigation of Black Cr Solar Selective Coatings (Black Cr 태양 선택흡수막의 SIMS 연구)

  • Lee, Kil-Dong
    • Journal of the Korean Solar Energy Society
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    • v.34 no.4
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    • pp.39-44
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    • 2014
  • The elemental composition of electro-deposited black Cr solar selective coatings before and after heating in air by using secondary ion mass spectrometry (SIMS) was investigated for optical property analysis. In addition, black Cr selective coating exposed by solar radiation for 5 months was compared with heated sample. SIMS investigation shows that $OH^+$ bearing ions were related to a near surface region of CrOH and CrO compound. The optical degradation of this coating after heating at $500^{\circ}C$ reveals that diffusion of the Cu and Ni elements in substrate material, the chemical interactions adjacent to the interface, and the interface width broadening.

Etching Characteristics of SBT Ihin Film in High Density Plasma (고밀도 플라즈마를 이용한 SBT의 식각 특성)

  • 김동표;이원재;유병곤;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.938-941
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    • 2000
  • SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

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Compositional SIMS Depth Profiling of CIGS film

  • Kim, Gyeong-Jung;Hwang, Hye-Hyeon;Jang, Jong-Sik;Jeong, Yong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.367-367
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    • 2011
  • CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.

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A Study on the Sodium and Moisture Gettering in PSG/SiO2 Passivated Al-1%Si Thin Film Interconnections (PSG/SiO2 보호막 처리된 Al-1%Si 박막배선에서의 Sodium과 수분 게터링에 관한 연구)

  • Kim, Jin Young
    • Journal of the Korean Vacuum Society
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    • v.22 no.3
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    • pp.126-130
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    • 2013
  • The sodium (Na) and moisture ($H_2O$) gettering phenomena were measured and analyzed in PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. PSG/$SiO_2$ passivation and Al-1%Si thin films were deposited by using APCVD (atmosphere pressure chemical vapor deposition) and DC magnetron sputter techniques, respectively. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of sodium and moisture throughout the PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. Both sodium and moisture peaks were observed strongly at the interfaces between layers rather than within the Al-1%Si thin film interconnections. Sodium peaks were observed at the interface between PSG and $SiO_2$ passivations, while moisture peaks were not observed.