Optimization of 1.2 kV 4H-SiC MOSFETs with Vertical Variation Doping Structure (Vertical Variation Doping 구조를 도입한 1.2 kV 4H-SiC MOSFET 최적화)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- 제37권3호
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- pp.332-336
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- 2024