• 전자공학회논문지D
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• 제36D권10호
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• pp.1-8
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• 1999

본 논문은 두께가 각각 다른 습식 산호막의 정전류 스트레스에 따른 SILC를 측정하여 SILC의 전도 mechanism 및 발생원인을 조사하였다. $N_2O$ 어닐링한 산화막의 SILC 특성도 조사하였다. 또한, 60A 두께의 $N_2O$ 어닐링한 터널링 산호막을 갖는 ,flash memory cell을 $0.25{\mu}m$ 설계규칙에 따라 제작하여 그 특성을 측정하였다. 그 결과, SILC의 발생 원인은 전기적 스트레스 인가에 따른 산호막내에 생성된 트랩 때문이며, SILC의 전도 mechanism은 전기장 세기가 8MV/cm 이하일 때 산호막 트랩을 경유한 modified F-N 터널링이 8MV/cm 이상일 때 전형적인 F-N터널링이 주도적임을 알 수 있었다. 60A의 $N_2O$ 어닐링한 산화막은 SILC에 대한 내성 측면에서 큰 개선 효과가 있음을 알 수 있었다. 또한 이 막을 flash memory cell의 터널링 산호막으로 이용할 경우, $10^6$회의 endurance와 10년 이상의 드레인 disturb가 보장되고 8V-프로그래밍이 가능한 특성을 얻을 수 있었다.

• 한국정보시스템학회지:정보시스템연구
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• 제22권3호
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• pp.59-75
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• 2013

Although information communication technology (ICT) has been one of the most important infrastructures for our societies, it is still considered as a kind of black box having a barrier to be accepted and being not easily understood. Nevertheless, there are no proper research models or theories for explaining older adults' ICT uses. The objective of this study is to suggest a direction for studying older adults' ICT using behaviors. For this purpose, based on the review and analysis of current studies, main research issues are discussed and a new research framework for the research of older adults' ICT use, Silver ICT users Life Cycle(SILC), is suggested.

• 한국농공학회지
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• 제61권3호
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• pp.2-6
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• 2019

• 한국농공학회지
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• 제59권3호
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• pp.43-49
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• 2017

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.1-8
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• 2004

두께가 3nm인 게이트 산화막을 사용한 n-MOSFET에 정전압 스트레스를 가하였을 때 관찰되는 SILC 및 soft breakdown 열화 및 이러한 열화가 소자 특성에 미치는 영향에 대해 실험하였다. 열화 현상은 인가되는 게이트 전압의 극성에 따라 그 특성이 다르게 나타났다. 게이트 전압이 (-)일 때 열화는 계면 및 산화막내 전하 결함에 의해 발생되었지만, 게이트 전압이 (＋)일 때는 열화는 주로 계면 결함에 의해 발생되었다. 또한 이러한 결함의 생성은 Si-H 결합의 파괴에 의해 발생할 수 있다는 것을 중수소 열처리 및 추가 수소 열처리 실험으로부터 발견하였다. OFF 전류 및 여러 가지 MOSFET의 전기적 특성의 변화는 관찰된 결함 전하(charge-trapping)의 생성과 직접적인 관련이 있다. 그러므로 실험 결과들로부터 게이트 산화막으로 터널링되는 전자나 정공에 의한 Si 및 O의 결합 파괴가 게이트 산화막 열화의 원인이 된다고 판단된다. 이러한 물리적 해석은 기존의 Anode-Hole Injection 모델과 Hydrogen-Released 모델의 내용을 모두 포함하게 된다.

• Journal of Minimally Invasive Surgery
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• 제21권4호
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• pp.168-176
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• 2018

Purpose: Robotic-associated minimally invasive surgery is a novel method for overcoming some limitations of laparoscopic surgery. This study aimed to evaluate the outcomes (postoperative pain, cosmesis, surgeon's workload) of single-incision robotic cholecystectomy (SIRC) vs. single-incision laparoscopic cholecystectomy (SILC) vs. conventional three-port laparoscopic cholecystectomy (3PLC). Methods: 134 patients who underwent laparoscopic or robotic cholecystectomy at a single center during 2016~2017 were enrolled. Prospectively collected data included demographics, operative outcomes, questionnaire regarding pain and cosmesis, and NASA-Task Load Index (NASA-TLX) scores for surgeon's workload. Results: 55 patients underwent SIRC, 29 SILC, and 50 3PLC during the same period. 3PLC patient group was older than the others (SIRC vs. SILC vs. 3PLC: 48.1 vs. 42.2 vs. 54.1 years, p<0.001). Operative time was shortest with 3PLC (44.1 vs. 38.8 vs. 25.4 min, p<0.001). Estimated blood loss, postoperative complications, and postoperative stay were similar among the groups. Pain control was lowest in the 3PLC group (98.2% vs. 100% vs. 84.0%, p=0.004), however, at 2 weeks postoperatively there were no differences among the groups (p=0.374). Cosmesis scores were also worst after 3PLC (17.5 vs. 18.4 vs. 13.3, p<0.001). NASA-TLX score was highest in the SILC group (21.9 vs. 44.3 vs. 25.2, p<0.001). Conclusion: Although SIRC and SILC take longer than 3PLC, they produce superior cosmetic outcomes. Compared with SILC, SIRC is more ergonomic, lowering the surgeon's workload. Despite of higher cost, SIRC could be an alternative for treating gallbladder disease in selected patients.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.429-432
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• 1998

The impact of hot carrier induced gate leakage current on the refresh time of memory devices has been examined. The maximum allowable supply voltage for cell transistor has been determined form the degradation of the refresh time. The desing guideline for cell capacitors and refresh circuits has been suggested.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.37.2-37
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• 2003

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.17-20
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• 2002

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

• 한국간담췌외과학회지
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• 제27권4호
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• pp.372-379
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• 2023

Backgrounds/Aims: While single-incision laparoscopic cholecystectomy (SILC) has advantages in cosmesis and postoperative pain, its utilization has been limited. This study raises the possibility of expanding its indication to acute cholecystitis with the novel method of solo surgery under retrospective analysis. Methods: We compared the outcomes of SILC (n = 58) to those of three-incision laparoscopic cholecystectomy (TILC; n = 117) for acute cholecystitis, being performed from March 2014 to December 2015. Results: Intraoperative results, including the operation time, did not differ significantly, except for drain catheter insertion (p = 0.004). Each group had 1 case of open conversion due to common bile duct injury. There was no significant difference in the length of hospital stay. Either group by itself was not a risk factor for complications, but in preoperative drainage for intraoperative perforation, 3 factors of intraoperative perforation, biliary complication, and history of upper abdominal operation for additional port, only American Society of Anesthesiology (ASA) scores for postoperative complication of Clavien-Dindo grades III and IV were significant risk factors. Conclusions: Our study findings showed comparative outcomes between both groups, providing evidence for the safety and feasibility of SILC for acute cholecystitis.