• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.1-8
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• 1999

In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0.25{\mu}m$ design rule, and measured the characteristics of the cell. As a result, we have found that the origin of SILC is due to the trap formed inside of the oxide layer by electrical stress. And we reached the conclusion that the transport mechanism of SILC is ruled by the modified F-N tunneling if the electric field is lower than 8MV/cm or typical F-N tunneling if the electric field is higher than 8MV/cm. We could also confirm the fact that $N_2O$ annealed oxide of 60Athick have an improved resistance effect against SILC. In case that we apply $N_2O$ annealed oxide of 60Athick to the flash memory, we could confirm $10^6$ times endurance and more than 10 years drain disturb, and could get 8V programmable flash memory characteristics.

• The Journal of Information Systems
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• v.22 no.3
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• pp.59-75
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• 2013

Although information communication technology (ICT) has been one of the most important infrastructures for our societies, it is still considered as a kind of black box having a barrier to be accepted and being not easily understood. Nevertheless, there are no proper research models or theories for explaining older adults' ICT uses. The objective of this study is to suggest a direction for studying older adults' ICT using behaviors. For this purpose, based on the review and analysis of current studies, main research issues are discussed and a new research framework for the research of older adults' ICT use, Silver ICT users Life Cycle(SILC), is suggested.

• Magazine of the Korean Society of Agricultural Engineers
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• v.61 no.3
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• pp.2-6
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• 2019

• Magazine of the Korean Society of Agricultural Engineers
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• v.59 no.3
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• pp.43-49
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• 2017

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Journal of Minimally Invasive Surgery
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• v.21 no.4
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• pp.168-176
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• 2018

Purpose: Robotic-associated minimally invasive surgery is a novel method for overcoming some limitations of laparoscopic surgery. This study aimed to evaluate the outcomes (postoperative pain, cosmesis, surgeon's workload) of single-incision robotic cholecystectomy (SIRC) vs. single-incision laparoscopic cholecystectomy (SILC) vs. conventional three-port laparoscopic cholecystectomy (3PLC). Methods: 134 patients who underwent laparoscopic or robotic cholecystectomy at a single center during 2016~2017 were enrolled. Prospectively collected data included demographics, operative outcomes, questionnaire regarding pain and cosmesis, and NASA-Task Load Index (NASA-TLX) scores for surgeon's workload. Results: 55 patients underwent SIRC, 29 SILC, and 50 3PLC during the same period. 3PLC patient group was older than the others (SIRC vs. SILC vs. 3PLC: 48.1 vs. 42.2 vs. 54.1 years, p<0.001). Operative time was shortest with 3PLC (44.1 vs. 38.8 vs. 25.4 min, p<0.001). Estimated blood loss, postoperative complications, and postoperative stay were similar among the groups. Pain control was lowest in the 3PLC group (98.2% vs. 100% vs. 84.0%, p=0.004), however, at 2 weeks postoperatively there were no differences among the groups (p=0.374). Cosmesis scores were also worst after 3PLC (17.5 vs. 18.4 vs. 13.3, p<0.001). NASA-TLX score was highest in the SILC group (21.9 vs. 44.3 vs. 25.2, p<0.001). Conclusion: Although SIRC and SILC take longer than 3PLC, they produce superior cosmetic outcomes. Compared with SILC, SIRC is more ergonomic, lowering the surgeon's workload. Despite of higher cost, SIRC could be an alternative for treating gallbladder disease in selected patients.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.429-432
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• 1998

The impact of hot carrier induced gate leakage current on the refresh time of memory devices has been examined. The maximum allowable supply voltage for cell transistor has been determined form the degradation of the refresh time. The desing guideline for cell capacitors and refresh circuits has been suggested.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.37.2-37
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• 2003

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.17-20
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• 2002

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.