• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.190-195
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• 2009

Na-tetrasilicic fluorine mica powders were synthesized by skull melting method. The staring materials having chemical composition of $Mg_3(OH)_2Si_4O_{10}:Na_2SiF_6:SiO_2=8.3:24.8:66.9$ mol% were charged into a cold crucible of 13 cm in diameter and 14cm in height and heated by R.F. generator at working frequency of 2.84 MHz. The materials were maintained for 1hr as a molten state and cooled down in the container. In this study, the specific electric resistance of mica was estimated and the columnar and plate shaped mica were synthesized.

• Journal of Information Display
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• v.2 no.2
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• pp.1-6
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• 2001

A $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with a new integrated 8-bit parallel-serial digital data driver was proposed and designed. For high resolution, the proposed parallel-serial digital driver used serial video data rather than parallel ones. Thus, digital circuits for driving one column line could be integrated within very small width. The parallel-serial digital data driver comprised of shift registers, latches, and serial digital-to-analog converters (DAC's). We designed a $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with integrated 8-bit parallel-serial digital data drivers by a circuit simulator which has physical-based analytical model of poly-Si TFT's. The fabricated shift register well operated at 2 MHz and $V_{DD}$=10V and the fabricated poly-Si TFT serial DAC's, which converts serial digital data to an analog signal, could convert one bit within $2.8{\mu}s$. The driver circuits for one data line occupied $8100{\times}50{\mu}m^2$ with $4{\mu}m$ design rule.

• Journal of Korea Foundry Society
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• v.13 no.4
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• pp.369-381
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• 1993

Aluminum alloy(AC8A) matrix composites reinforced with SiC particles(10% in vol.) were fabricated by Centrifugal Spray Deposition(CSD) process. The microstructures were investigated in order to evaluate both the mixing mode between aluminum matrix and SiC particles, and the effect of SiC particles on the cooling behaviours of droplets during flight and preforms deposited. A non-continuum mathematical calculation was performed to explain and to quantify the evolution of microstructures in the droplets and preforms deposited. Conclusions obtained are as follows; 1. The powders produced by CSD process showed, in general, ligament type, and more than 60% of the powders produced were about 300 to 850 um in size. 2. AC8A droplets solidified during flight showed fine dendritic structure, but AC8A droplets mixed with SiC particles showed fine equiaxed grain structure, and eutectic silicon were formed to crystallize granularly between fine aluminum grains. 3. SiC particles seem to act as a nucleation sites for pro-eutectic silicon during solidification of AC8A alloy. 4. The microstructure of composite powders formed by CSD process showed particle embedded type, and resulted in dispersed type microstructure in preforms deposited. 5. The pro-eutectic silicon crystallized granularly between fine aluminum grains seem to prohibit grains from growth during spray deposition process. 6. The interfacial reactions between aluminum matrix and SiC particles were not observed from the deposit performs and the solidified droplets. 7. The continuum model seem to be useful in connecting the processing parameters with the resultant microstructures. From these results, it was concluded that the fabrication of aluminum matrix composites reinforced homogeneously with SiC particles was possible.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1747-1752
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• 2012

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane (BTMSM) and oxygen mixed precursor by the chemical vapor deposition. The dielectric constant is measured by MIS(metal/insulator/Si) structure, but it could decrease the reliability because the uniformity is not assured. To research the dielectric constant of SiOC film, the range of low polarization was researched in SiOC film using the optical analysis and hardness, and then calculated the dielectric constant of SiOC film with amorphous structure of high degree. After annealing, the dielectric constant of SiOC film was decreased owing to the lowering of polarization, and FTIR spectra of the main bond was shifted to higher wave number. The main bond of 950~1200 cm-1 was composed of the Si-C and Si-O bonds. The intensity increases in Si-O bond infers the bonding strength became stronger than that of deposited film. Annealed SiOC film showed 2.06 in dielectric constant.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1410-1412
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• 2007

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.42.2-42
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• 2003

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.969-973
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• 1997

저유전율 층간절연물질인 불소첨가 SiO$_{2}$박막을 ECR(electron cyclotron resonance) Plasma chemical vapor deposition 법으로 성막하였다. SiOF박막의 증착은 SiF$_{4}$/O$_{2}$의 가스유량비를 변수로하여 0.2에서 1.6까지 변화시켜 증착하였고, 이때 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF박막의 흡습특성을 알아보기 위하여 Fourier transformed infrared spectroscopy(FTIR)을 이용하여 분석한 결과, 가스유량비 (SiF$_{4}$O$_{2}$)가 0.2 에서 1.6으로 증가하였을 때 Si-Ostretching피크의 위치는 1072$cm^{-1}$ /에서 1088$cm^{-1}$ /로 증가하였으며, Si-F$_{2}$피크는 가스유량비가 1.0이상에서 나타나기 시작하였다. 또한 가스유량비가 0.2에서 0.8까지 변화하여 증착한 시편은 Si-OH 피크가 관찰되지 않았지만 가스유량비가 1.0이상(11.8at.% F함유)의 시편의 경우 Si-OH 피크가 관찰되어 내흡습성이 저하되고 있음을 확인할 수 있었다.

• Journal of Mechanical Science and Technology
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• v.18 no.3
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• pp.388-394
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• 2004

Composites of Si$_3$N$_4$-SiC containing up to 30 wt% of dispersed SiC particles were fabricated via hot-pressing with an oxynitride glass. To determine the effect of sintering time and SiC content on the mechanical properties and the cutting performance, the composites with fixed 8hr-sintering time and 20 wt% SiC content were fabricated and tested. Fracture toughness of the composites increased with increasing sintering time, while the hardness increased as the SiC content increased up to 20 wt%. The hardness of the composites was relatively independent of the grain size and the sintered density. For machining heat-treated AISI4140, the insert with 20 wt% SiC sintered for 8hr showed the longest tool life while the insert with 20 wt% SiC sintered for 12hr showed the longest tool life for machining gray cast iron. An effort was made to relate the mechanical properties, such as hardness, fracture toughness and wear resistance coefficient with the tool life. However, no apparent relationship was found between them. It may be stated that tool life is affected by not only the mechanical properties but also other properties such as surface roughness, density, grian size and the number of the inherent defects in the inserts.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.11
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• pp.1725-1732
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• 2013

This paper deals with an approach to boost the public sector SI market in Korea. In order to promote competition powers of the software industry in Korea, a software industry promotion law has been issued, which restricts large SI companies from competing in the public sector system integration market. However, naturally many SI projects in public sectors are too large and complicated to be carried by small and medium size companies. This paper proposes an approach to reform the SI market for those small and medium size SI companies.