• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.415-418
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• 2009

$Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

• 접착 및 계면
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• 제7권4호
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• pp.32-38
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• 2006

A series of organic-inorganic hybrids, PCL/EP/$SiO_2$, involving epoxy resin and triethoxysilane-terminated polycaprolactone elastomer (PCL-TESi) were prepared via polymerization of diglycidyl ether of bisphenol A (DGEBA) with amine curing agent KB-2 and sol-gel process of PCL-TESi. The curing reactions were started from the initially homogeneous mixture of DGEBA, KB-2 and the PCL-TESi. The organicinorganic hybrids containing up to 4.95% (wt) of $SiO_2$ were obtained and characterized by FT-IR, transmission electron microscopy (TEM), differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). It was experimentally shown that the swelling property in toluene, morphologies and thermal properties of the resulting hybrids were quite dependent on the contents of $SiO_2$. The crosslink network density decreases with increasing of the PCL-TESi. And in TEM, the phase separated morphology of these hybrids was found, which resulted from the coagulation of Si-O-Si networks resulting from $-Si(OC_2H_5)_3$ of PCL-TESi self-curing by hydrolytic silanol condensation, with the advancement of the curing reaction in the modified epoxy resin systems. Meanwhile, the change of the $SiO_2$ content made the morphologies changed from aggregated particles of Si-O-Si in the hybrid to nanocluster of interconnected Si-O-Si particles, then to aggregated Si-O-Si dispersing in the continuous cured epoxy phase again, and last to co-continuous interpenetrating network. The glass transition behavior of the hybrid material was cooperative motion of large chain segments, which were hindered by the inorganic Si-O-Si network. And in TG analysis, the characteristic temperature at 5% of weight loss was evidently increased from $120.5^{\circ}C$ of pure cured epoxy to $277.6^{\circ}C$ of 3.84% (wt) of $SiO_2$ modified epoxy due to the existence of Si-O-Si when PCL-TESi was added in the hybrid.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.352-357
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% TiB$_2$ and using 61vo1.% SiC - 39vo1.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 180$0^{\circ}C$ for 4 hours. Reactions between SiC and transition metal TiB$_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), TiB$_2$ and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-TiB$_2$, and SiC(2H), WC and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-WC composites. $\beta$\$\longrightarrow$$\alpha$-SiC phase transformation was ocurred on the SiC-TiB$_2$, but $\alpha$\$\longrightarrow$$\beta$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the vicker's hardness, the flexural strength and the fracture toughness showed respectively value of 96.2%, 13.34GPa, 310.19Mpa and 5.53Mpaㆍml/2 in SiC-WC composites. The electrical resistivity of the SiC-TiB$_2$ and the SiC-WC composites is all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$. 2.64${\times}$10-2/$^{\circ}C$ of PTCR of SiC-WC was higher than 1.645${\times}$10-3/$^{\circ}C$ of SiC-TiB$_2$ composites.posites.

• 한국세라믹학회지
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• 제30권8호
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• pp.615-622
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• 1993

In order to increase chemical durability of thin films in binary system B2O3-SiO2 and Al2O3-SiO2 on the slide glass by the dip-coating technique from TEOS(Tetraethyl Orthosilicate) and boric acid or aluminum nitrate, phosphoric acid(5~20mol%) was added, respectively. Corrosion of acid and alkali of samples treated with 1N, HCl, NaOH and distilled water at 10$0^{\circ}C$ for 15 minute, were measured IR transmittance and variance of transmittance at visible range. Surface structure of thin film was investigated with SEM and formation of crystal phase according to additiion of phosphoric acid was measrued with XRD. In Al2O3-SiO2 system, change of remarkable characteristic was not obtained at the addition of P2O5 but transmittance of thin film was decreased with addition of P2O5 in B2O3-SiO2 system.

• 한국세라믹학회지
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• 제31권4호
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• pp.375-380
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• 1994

Matrices retaining electrolyte in phosphoric acid fuel cell were prepared with SiC to SiC whisker mixing ratios of 1:0.5, 1:1, 1:1.5, 1:2, 1:3 by tape casting method. When viscosity of the slurry was 5.9 poise and the SiC to SiC whisker mixing ratios were 1:1, 1:1.5, 1:2, the ranges of porosity, acid absorbency and bubble pressure were 80~90%, 2.5~6 and 700~2200 mmH2O, respectively. Those ranges are acceptable for a practical electrolyte-retaining matrix. With increasing the mixing ratio of SiC whisker to SiC, the porosity and the vol.% of large pores in the main pore size distribution which is between 1 and 10 ${\mu}{\textrm}{m}$, increased rapidly. Impedance spectroscopy was measured to know characteristics of matrix inside and contact region of matrix to catalyst layer. When the SiC to SiC whisker mixing ratio was 1:2, hydrogen ions were transported in the matrix most effectively because of high ionic conductivity and low activation energy due to high acid absorbency in spite of high interfacial resistance. The cell current density of the cell made using the matrix was 220 mA/$\textrm{cm}^2$ at 0.7 V.

• 한국세라믹학회지
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• 제51권5호
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• pp.459-465
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• 2014

In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

• 한국진공학회지
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• 제10권1호
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• pp.104-111
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• 2001

$SiH_4$, $CH_4$, $B_2H_6$ 혼합기체를 이용하여 플라즈마 화학증착법으로 비정질 탄화실리콘(a-SiC:H) 박막을 증착하였다. 기상 doping 농도를 0에서 $2.5\times10^{-2}$ 범위에서 변화시켜 얻은 박막의 물성을 SEM, XRD, Raman 분광법, FTIR, SIMS, 광흡수도와 전기전도도 분석을 통하여 살펴보았다. $B_2H_6$/($CH_4+SiH_4$) 기체유량비가 증가할수록 붕소의 도핑효율와 미세결정성은 감소하였다. 증착 중 $B_2H_6$ 기체가 첨가됨에 따라 비정질 탄화실리콘 박막의 Si-C-H 결합기의 강도는 감소하였으며, 이의 영향으로 박막내의 수소함량은 $B_2H_6/(SiH_4+CH_4$) 기체 유량비가 증가함에 따라 16.5%에서 7.5%로 단조감소하였다. $B_2H_6(CH_4+SiH_4$) 기체유량비가 증가할수록 a-SiC:H 박막의 광학적 밴드갭과 전기활성화 에너지는 감소하였고, 전기전도도는 증가하였다.

• 한국결정성장학회지
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• 제25권3호
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• pp.85-92
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• 2015

SiC 결정은 전력반도체 소자용 소재로서 지금까지 외국은 물론 국내에서도 많은 연구가 이루어지고 있으며, 지금까지 고주파 유도가열 방식을 이용한 승화법으로 성장되어 왔다. 그러나, SiC 단결정은 결정 성장 계면에서의 온도 안정성에 따라 쉽게 다른 다형으로 성장하기 때문에, 고품질의 결정을 얻기 위해서는 결정성장 계면에서의 안정적인 온도 구배가 필요하다. 본 논문에서는 저항가열 방식을 이용한 승화법 성장 장치를 이용하여 종자결정을 사용하지 않은 상태에서 SIC 다결정상을 성장하여 보고, 성장 양상에 대하여 고찰하고자 하였다. SiC 다결정상은 성장속도 0.02~0.5 mm/hr로 성장되었으며, 성장된 SiC 다결정상의 두께는 0.25 mm~0.5 mm이고, 이 때 도가니 하부의 온도는 $2100{\sim}2300^{\circ}C$, 성장 압력은 10~760 torr의 범위에서 조절되었다. 성장된 다결정상 결정은 광학현미경으로 관찰하여, 성장 거동을 고찰하였다.

• 한국세라믹학회지
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• 제25권5호
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• pp.473-478
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• 1988

In order to obtain the high purity $\beta$-SiC powder that possesses the excellent sinterability and is close to the spherical shape, the carbon black was mixed into the composition of Si(OC2H5)4-H2O-NH3-C2H5OH which the monodispersed spherical fine particles is formed the hydrolysis of Ethylsilicate and the mixture was carbonized under an argon atmosphere. Particle shpae, size and the yield of $\beta$-SiC powder were investigated according to the molar ratio of carbon/alkoxide and variations of reaction temperature and reaction time. The results of this study are as follow ; 1) The yield of $\beta$-SiC gained from the reaction for one hour at 150$0^{\circ}C$ almost got near 100% and the particle size of $\beta$-SiC from the reaction for 15 hrs at 150$0^{\circ}C$ was 0.2${\mu}{\textrm}{m}$ on the average and close to the spherical shape agglomerate state. 2) When the molar ratio carbon/alkoxide is over 3.1 and the reaction occurs at 145$0^{\circ}C$ for 5hrs, the carbon content has not an effect on the kind of crystal of product.

• 한국세라믹학회지
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• 제39권6호
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• pp.594-597
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• 2002

플라즈마 화학기상증착(PECVD)법을 이용하여 p-type Si(100) 웨이퍼에 Silicon Oxynitride(SiON) 후막을 SiH$_4$ , $N_2$O, $N_2$ 가스를 혼합하여 증착하였다. Prism coupler측정을 통해 SiON 후막의 굴절률 1.4620~1.5312을 얻었으며, rf power가 180 W에서 5.92$\mu$m/h의 증착률을 나타내었다. 증착변수에 따른 화학적 조성의 영향은 X-ray Photoelectron Spectroscopy(XPS) 을 통하여 관찰하였다. 또한, SiON 후막 증착후에 $1.5\mu$m 부근의 흡수띠를 제거하기 위해 105$0^{\circ}C$의 $N_2$ 분위기에서 2시간 동안 열처리를 행하였다.