• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.85.2-85.2
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• 2011

A new infrared spectro-polarimeter was installed in 2008 onto the Solar Flare Telescope of NAOJ in the Mitaka headquarters. The Solar Flare Telescope had been operated previously as a filter-based magnetograph and obtained vector magnetograms of active regions with the Fe I 630.3nm line during 1992 - 2005. The aim of this new instrument is to measure the distribution of magnetic helicity over the whole Sun and for an extended period with high magnetic sensitivity in the infrared wavelengths. This spectro-polarimter is able to obtain polarizations in both photospheric and chromospheric layers. In order to take full Stokes profiles, we observe Fe I 1564.8 nm and He I 1083.0 nm lines (with the neighboring photospheric Si line) for the photospheric and chromospheric magnetic field vectors, respectively. The infrared detector of this instrument is a $640{\times}512$-pixel InGaAs camera produced by a Belgian company Xenics. The frame rate of the camera is 90 frames/sec. The 640-pixel row of this camera is set along the spectrograph slit of the polarimeter. Since the slit only covers the solar hemisphere, a full disk map is obtained by raster scanning the solar disk twice. A magnetic map is made of about $1200{\times}1200$ pixels with a pixel size of 1.8 arcsec. It generally takes 1.5 hours to scan the whole Sun. Although some issues on the instrument calibration still remain, a few maps of the whole Sun at the two wavelengths are now taken daily. In this presentation, we will introduce the instrument and present some observational results.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• Journal of Conservation Science
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• v.36 no.3
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• pp.162-177
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• 2020

Research was conducted to characterize the copper production and smelting process with 11 copper smelting by-products (copper slag and copper crucible) excavated from the NA and LA areas at the Gwanbuk-ri archeological site in Buyeo. Scanning electron microscopy-energy dispersive spectroscopy, wavelength dispersive X-ray fluorescence, X-ray diffraction, and Raman microspectroscopy were employed in the analysis. The research results reveal that the copper slag from Gwanbuk-ri contained silicate oxide, magnetite, fayalite, and delafossite, which are typical characteristics of crucible slag and refined slag. The outward appearance and microstructure of the slag were grouped as follows: 1. glassy matrix + Cu prill, 2. glassy matrix + Cu prill + magnetite, 3. silicate mineral matrix + Cu prill, 4. crystalline (delafossite and magnetite) + amorphous (Cu prill), 5. magnetite + fayalite, and 6. slag from slag. The copper slags from Guanbuk-ri were found to contain residues of impurities such as SiO₂, Al₂O₃, CaO, SO₄, P₂O₅, Ag₂O, and Sb₂O₃ in their microstructure, and, in some cases, it was confirmed that copper, tin and lead are alloys. These results indicate that refining of intermediate copper(including impurities) and refining of alloys of copper(including impurities) - tin and refining of copper(including impurities) - tin - lead took place during the copper production process at Gwanbuk-ri, Buyeo.

• Journal of Conservation Science
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• v.30 no.4
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• pp.335-343
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• 2014

This study classified the result of non-metallic inclusion analysis and result of microstructure investigation on the ironware excavated in the Baekje region into Han River, Geum River, and Yeongsan River to estimate the iron making temperature and study the characteristics of regional and temporal characteristics of the heat treatment technology and steel making technology. Regardless of era, bloom iron and sponge iron are judged to be the major method for making as a directreduction process in all three regions. The result of the reinterpretation of the non-metallic inclusion by the oxide ternary constitutional diagram suggest that the temperature inside of the furnace is estimated to be between $1,100{\sim}1,300^{\circ}C$ while making the steel. The magnetic iron ores are the major raw material of steel ore and irons with high $TiO_2$ are estimated to use iron sands. Ironware with $CaO/SiO_2$ rate higher than 0.4% are considered to have artificially added the flux of calcareous materials. It was found that the iron making method is the solid caburizing-steel which caburizes low-carbon steels by the CO gas and $CO_2$ gas created when heating the forging furnace with charcoal. Also, the ironware manufacturers in the Baekje during 3rd century recognized the heat treatment technology as they performed carburizing process and quenching to intentionally increase the strength of necessary parts.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.44 no.3
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• pp.225-229
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• 1999

Unstable seedling stand establishment of wet direct seeding culture of rice is one of the major elements preventing the extension of its culture area. In order to develop methods of seedling stand improvement in direct seeded rice on flooded surfaces, three field experiments were conducted on silty loam soil using a cultivar 'Donjinbyeo' for three years, mainly focusing on water management after seeding and seed soaking with plant growth regulators (PGRs). Under the condition of shallow flooding after seeding, seedling stand rate increased and floating seedling rate decreased in both early and normal season seeding compared to deep flooding. With earlier draining time after seeding, there was a tendency towards preferential growth of the seminal root, increase of seedling stand and decrease of the floating seedling rate. Therefore the highest seedling numbers per unit area and the lowest floating seedling numbers were found upon drainage at 1 day after seeding (DAS), while a contrary tendency was shown upon conventional drainage at 7 DAS. Seed soaking with PGRs such as Metalaxyl or mixing of Metalaxyl with gibberellic acid (GA$_3$) significantly increased the seedling stand. In addition the effects of PGR treatment on seedling stand and the early growth of plants were greater under flooded conditions than under drained conditions after seeding, although draining of water after seeding improved the seedling establishment rate more when compared with the PGR treatment. These results suggest that draining management after seeding or maintaining of shallow flooding for a week is the most effective method to improve the seedling stand rate in wet direct seeding.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.91-91
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• 1999

광소자 기술은 정보 전달 및 저장 기술의 지속적인 증가 요구에 따라 발전을 거듭하여 왔다. 특히 광통신 및 저장 기술에서 광원으로 사용되는 레이저 다이오드는 안정되면서 쉽게 제작할 수 있어야 한다. 이온 주입 방법은 반도체 공정에서 광범위하게 사용되는 공정이며 이미 소자측면에서 안정성이 확보되었다고 볼 수 있으나 대부분 메모리 등의 실리콘 반도체에서 이용되어 왔다. 최근에는 화합물 반도체 분야에서도 적용하는 예가 증가되고 있으나 광원으로 사용되는 레이저 다이오드의 경우는 우수한 품질의 반도체 층이 요구되며 따라서 damage가 큰 이온 주입 방법을 이용한 연구는 아직 많이 이루어져 있지 않다. 본 연구에서는 레이저 다이오드 구조의 성장측에 국부적으로 Fe 이온을 주입하여 도파로를 형성하여 광을 구속하여 도파시키는 동시에 전기적으로도 도파로 부분으로만 다이오드가 형성되도록 하고자 한다. 먼저 p층의 전기적 절연에 필요한 조건을 확보하기 위하여 CBE를 사용하여 Fe가 doping 된 SI-InP wafer 위에 p-InP (Be:5x1017 cm-3)층을 1.2$mu extrm{m}$ 성장한 후 ohmic 층으로 p-InGaAs (Be:1x1019 cm-3)을 0.1$\mu\textrm{m}$ 성장한 시료에 고에너지 이온 주입 장치를 사용하여 Fe 이온을 1MeV, 1.6meV의 에너지에 각각 1x1014cm-2, 2x1014cm-2 의 dose로 전면에 implant 하였다. 이 시료를 tube furnace에서 500, 600, $700^{\circ}C$각각 10분씩 annealing 한 후 재성장을 확인하기 위하여 DCXRD을 측정하였다. 그림 1은 DCXRD rocking curve로 annealing 하기 전 후의 In rich에서 side peak의 감소를 확인 할 수 있었는데 이는 damage가 어느 정도 복구되었음을 의미한다. 또한 절연 특성을 확인하기 위하여 ohmic metal을 증착하여 Hall 효과를 측정하였다. 그림 2에 보이는 것과 같이 annealing 온도가 증가함에 따라 면저항이 크게 증가함을 볼 수 있으며 이온 주입하기 전의 시료에 비해 104 이상의 저항을 갖을 수 있다. 향후 이러한 결과를 바탕으로 1.55$\mu\textrm{m}$ LD 구조에서 발진 특성을 관찰할 계획이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.260-260
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• 2011

투명 비정질 산화물반도체는 디스플레이의 구동소자인 박막 트랜지스터에 채널층으로 사용된다. 또한 투명하면서 유연성이 있는 소자를 저비용으로 제작할 수 있는 장점을 가진다. 투명 산화물반도체 재료 중 IGZO는 Si 또는 GaAs와 같은 공유결합성 반도체와는 다른 전자 배치로 전도대가 금속이온의 ns 궤도에서 형성되며, 가전도대가 산소 음이온의 2p 궤도에서 형성된다. 특히 큰 반경의 금속 양이온은 인접한 양이온과 궤도 겹침이 크게 발생하게 되며 캐리어의 효과적인 이동 경로를 제공해줌으로써 다른 비정질 반도체와는 다르게 높은 전하이동도(~10 $cm^2$/Vs)를 가진다. 따라서 저온공정에서 우수한 성능의 TFT소자를 제작할 수 있는 장점이 있다. 본 연구에서는 TFT 채널층으로 사용하기 위한 a-IGZO박막의 산소분압에 따른 특성변화를 분석 하였다. a-IGZO박막은 Pulsed Laser Deposition (PLD)를 이용하여 산소분압(20~200 mTorr) 변화에 따라 Glass기판에 증착하였다. 증착된 a-IGZO 박막의 구조적 특성으로는 X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), 광학적 특성은 UV-vis spectroscopy 분석을 통해서 알아보았다. TFT 채널층의 조건으로는 낮은 off-current, 높은 on-off ratio를 위해 고저항 ($10^3\;{\Omega}cm$)의 진성반도체 성질과 source/drain금속과의 낮은 접촉저항(ohmic contact) 등의 전기적 성질이 필요하다. 따라서 이러한 전기적 특성확인을 위해 transmission line method (TLM)을 사용하여 접촉저항과 비저항을 측정하였고, 채널층으로 적합한 분압조건을 확인해볼 수 있었다.