• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.377-381
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• 1998

Wear behaviors of unidirectionally oriented $Si_3N_{4w)/Si_3N_4$ composites, sintered at different temperatures with different alignments of whiskers, have been studied in parallel and perpendicular sliding directions with respect to the orientation of the whiskers by using a ball-on-disk reciprocating sliding apparatus. The results show that wear rate in parallel direction is much greater than that in perpendicular direction. With decreasing alignment of the whiskers, the wear rate decreases in parallel sliding direction and increases in perpendicular direction. With increasing sintering temperature, the wear rate increases obviously in both parallel and perpendicular directions.

• Journal of Magnetics
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• v.1 no.1
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• pp.4-8
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• 1996

Employing the LMTO band method, we have studied electronic and magnetic properties of Fe/Si/Fe trilayer in which the z-direction is chosen to be (111) direction of FeSi with B2 phase, We have also determined electronic structure of bulk FeSi, as a reference material. The ground state of FeSi is paramagnetic insulator with a band gap of 0.05 eV. Band structures of Fe/Si/Fe with varying the thickness of the spacer layer reveal that the spacer layer is metallic, and the states along the growth direction do not disperse much reflecting a two-dimensional nature. Magnetic moment of Fe atom in the interfacial layer of Fe/Si/Fe is reduced a lot as compared to the bulk value, suggesting a strong hybridization between Fe and Si states. The geometry of the Fermi surface indicates that the magnetic coupling period of ~8ML (monolayers) in Fe/Si/Fe is explained with a short Fermi wave vector of bcc Si.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.158-161
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• 2006

SiC materials have been extensively studied for high temperature components in advanced energy conversion system and advanced gas turbine. However, the brittle characteristics of SiC such as law fracture toughness and law strain-to fracture impose a severe limitation on the practical applications of SiC materials. SiC/SiC composites can be considered as a promising candidate in various structural materials, because of their good fracture toughness. In this composite system, the direction of SiC fiber will give an effect to the mechanical properties. It is therefore important to control a properdirection of SiC fiber for the fabrication of high performance SiC/SiC composites. In this study, unidirection and two dimension woven structures of SiC/SiC composites were prepared starting from Tyranno SA fiber. SiC matrix was obtained by nano-powder infiltration and transient eutectoid (NITE) process. Effect of microstructure and density on the sintering temperature in NITE-SiC/SiC composites are described and discussed with the fiber direction of unidirection and two dimension woven structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.9
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• pp.2374-2385
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• 1994

SiCw/Al composite material is especially attractive because of their superior specific strength, specific stiffness, corrosion fatigue resistance, creep resistance, and wear resistance compared with the corresponding wrought Al alloy. In this study, Fatigue crack growth behavior and fatigue crack path morphology(FCPM) of SiC whisker reinforced Al 6061 alloy with 25% SiC volume fraction and Al 6061 allay were performed. Result of the fatigue crack growth test sgiwed that fatigue crack growth rate of SiCw/Al 6061 composite was slower than that of Al 6061 matrix therefore it was confirmed that Sic whisker have a excellent fatigue resistance. And Al 6061 matrix had only FCPM perpendicular to loading direction. On the other hand SiCw/Al 6061 composite had three types in fatigue crack path morphology. First type is that both sides FCPM of artificial notch are perpendicular to loading direction. Second type is that a FCPM in artifical notch has slant angle to loading direction and the other side FCPM is perpendicular to loading direction. Third type is that both sides FCPM of notch have slant angle to loading direction. It was considered that this kinds of phenomena were due to non-uniform distribution of SiC whisker and confirmed by SEM observation for fracture mechanism study.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.320-326
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• 2000

Development of texture in SiC materials by hot-pressing and subsequent annealing was studied. Crystallographic texture type was characterized by measuring X-ray pole figures on the perpendicular plane to the hot-pressing direction. Observed all pole figures were nearly axially symmetric (fiber texture). In case of ${\beta}$-SiC materials, the pole density of basal plane (0004) increased as annealing time increased, in contrast, other planes (hkil) of ${\beta}$-SiC materials and all planes of ${\alpha}$-SiC materials nearly remained unchanged. In the case of ${\beta}$-SiC materials, therefore, a weak texture of (0001) plane at the normal direction took place in the 8h annealed samples, resulting from grian growth. The fracture toughness values of ${\alpha}$-SiC materials measured in both planes parallel and perpendicular to the hot-pressing direction were very similar. However, the fracture toughness of ${\beta}$-SiC materials measured parallel to the hot-pressing direction were higher than that measured perpendicular to the hot-pressing derection, relatively, because of the texture and the microstructure anisotropy.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.65-68
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• 2007

An epitaxial NiSi structure on Si (001) substrate was studied by using density functional theory (DFT). Orhorhombic and B2-NiSi structures were compared first. B2 structure was further considered as it has same crystal structure as Si and the lattice mismatch between B2 and Si is small, compared to orthorhombic-NiSi. The lattice parameters of x- and y-direction in B2-NiSi structure were modified to match with those in Si (001). The size reduction of the lattice parameter of B2-NiSi to match with that of Si increased the lattice parameter of z-direction by 10.5%. Therefore, we propose that an optimum structure of NiSi for epitaxial growth on Si (001) is a tetragonal structure.

• Journal of the Korean Society of Safety
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• v.33 no.1
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• pp.1-6
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• 2018

The effects of the fiber direction, specimen size and temperature on the compressive strength of carbon fiber reinforced silicon carbide composite (C/SiC composite) manufactured by liquid silicon infiltration(LSI) is investigated. Tests were conducted in accordance with ASTM C 695 at room temperature and elevated temperatures. Experiments are conducted with two different specimens considering grain direction. With grain (W/G) specimens have a carbon fibers parallel to the load direction, but across grain (A/G) specimens have a perpendicular carbon fibers. To verify the specimen size effect of C/SiC composite, two types of specimens are manufactured. One has a one to two ratio of diameter to height and the other has a one to one ratio. The compressive strength of C/SiC composite increased as temperature rise. As specimens are larger, compressive strength of A/G specimens increased, however compressive strength of W/G decreased.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.1
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• pp.23-30
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• 2014

The wear characteristics of $SiC_f$/SiC composites were evaluated according to the alignment direction of the fibers, and the elastic wave-generated friction was detected and analyzed in wearing. The friction coefficient and wear loss were similar in the longitudinal and the transverse direction of the fibers. However, these values were lower in the vertical direction of the fibers because of the brittle nature of the fiber. The friction coefficient and the wear loss were directly proportional to each other. The dominant frequencies were 58.6 kHz for monolithic SiC and 117.2 and 136.7 kHz for $SiC_f$/SiC composites, respectively.