• 한국표면공학회지
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• 제32권2호
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• pp.125-133
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• 1999

Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.868-871
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• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.413-417
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• 1997

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization. The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM (Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$\sub$6/ plasma treatment subsequent to the etch process prevents the corrosion effectively in the pressure of 300 mTorr. It is found that the chlorine atoms on the etched surface are not substituted for fluorine atoms during SF$\sub$6/ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$\sub$6/ treated surface and suppresses the corrosion successfully.

• Composites Research
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• 제27권5호
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• pp.196-200
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• 2014

A novel, simple and totally recyclable method has been developed for the synthesis of nontoxic, biocompatible and biodegradable bio-composite films from soy protein and silk protein. Bio films are defined as flexible films prepared from biological materials such as protein. These materials have potential application in medical and food as a packaging material. Their use depends on various parameters such as mechanical (strength and modulus), thermal, among others. In this study, prepare and characterization of bio films made from Soy Protein Isolate (SPI) (matrix) and Silk Fiber (SF) (reinforcement) through solution casting method by the addition of plasticizer and crosslinking agent. The obtained SPI and SPI/SF composites were subsequently subjected to evaluate their mechanical and thermal properties by using Universal Testing Machine and Thermal Gravimetric Analyzer respectively. The tensile testing showed significant improvements in strength with increasing amount of SF content and the % elongation at break of the composites of the SPI/SF was lower than that of the matrix. Though the interfacial bonding was moderate, the improvement in tensile strength and modulus was attributed to the higher tensile properties of the silk fiber.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.56-59
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• 2011

The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

• 대중서사연구
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• 제25권1호
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• pp.165-191
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• 2019

본고의 목적은 SF영화 <스타트랙> 시리즈에 나타난 시간여행의 모티프가 서사적 측면과 비서사적 측면에서 하고 있는 기능에 대해 고찰함으로써 SF서사에서 이 모티프가 계속 반복되는 이유를 밝히는 데 있다. <스타트랙 IV: 시간 초월의 항해>(1986)는 실제로 사용되는 항법인 슬링샷으로 태양 주위를 돌파하여 그럴듯하게 시간여행을 하는 것과 당시에는 없던 투명 알루미늄의 제작 공식을 알려줘 역사에 변화를 가져오는 예정 역설을 불러오는 것을 통해 이야기에 대한 관객의 흥미를 끌고자 한다. 또한 이 영화는 혹등고래를 중심 서사에 포함시켜 고래 보호운동이라는 당대의 현실적 문제에 부응함으로써 생태주의라는 이데올로기를 환기시키는 기능을 한다. <스타트랙 VIII: 퍼스트 콘택트>(1996)는 빛보다 빠른 속도로의 비행을 가능하게 해주는 가상의 장치로 스타트랙을 대표하는 기술인 워프 드라이브를 시간여행을 통해 그 탄생 시점에서 다룸으로써 서사에 흥미를 더하고자 한다. 그리고 영화는 핵전쟁이 가져올 수 있는 인류의 멸망을 경고하여 평화적 노력을 계속할 것을 역설하고, 외계와의 조우로 행성연방의 창설을 예고하여 현실 세계에서의 국가 간 협력의 중요성을 강조함으로써 평화주의와 이상주의의 시각을 드러낸다. <스타트랙: 더 비기닝>(2009)은 블랙홀에 의한 과거로의 시간 여행과 그로 인해 생성된 평행우주라는 시간여행 서사 요소를 통해 흥미를 높이는데, 특히 후자는 그동안 전개된 이야기를 그대로 유지하면서 자유롭게 새로운 시간선의 이야기를 창조하도록 해주는 리부트 기능을 한다. 더불어 이 영화는 스팍(과 연방함대)과 네로의 대립, 벌컨 행성과 로물루스 행성의 파괴, 인간과 벌컨족의 협력을 통해 1996년 영화에서 보여주었던 평화주의와 이상주의를 반복한다. 결국 세 편의 <스타트랙> 영화에서 시간여행은 서사적 측면에서 이야기에 대한 관객의 흥미를 최대한으로 끌어올리고 서사를 자유롭게 전개하게 해주는 기능을 함과 동시에 비서사적 측면에서 현재의 문제에 대해 논평하고 이상적인 해결 방안을 제시하는 기능을 한다고 할 수 있다. 본고의 의의는 위와 같은 시간여행의 기능으로 볼 때 SF서사에서 시간여행의 모티프가 앞으로도 계속해서 반복되면서 진화할 것이라는 예상을 가능하게 한 데 있다.

• 건축사
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• 통권522호
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• pp.20-23
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• 2012

대한건축사협회가 주최하는 제4회 서울국제건축영화제($4^{th}$ Seoul International Architecture Film Festival)는 건축과 영화의 만남을 통하여 국민들이 건축을 보다 친근히 느낄 수 있게 하고, 건축사의 역할, 건축의 가치에 대해 논할 수 있는 장을 마련한다. 11월 8일에 개막식이 열릴 예정이며, 김형수 서울국제건축영화제 집행위원장의 개막선언과 함께 막을 열 이번 영화제는 '도시'를 주제로 총 5개국 10편의 영화가 7일간 상영될 예정이다. 개막작은 에쿠메노폴리스로 이스탄불의 도시문제를 다루고 있으며, 상영작 중 '브라질'은 80년대 SF영화로 당시 향수를 불러일으키며 다양한 관객층을 불러 모을 예정이다.

• Bulletin of the Korean Chemical Society
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• 제15권12호
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• pp.1042-1045
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• 1994

A thin film of silver ferricyanide (Ag$_3$Fe(CN)$_6$) on a platinum or gold substrates can be reduced electrochemically to the salt of silver ferrocyanide in potassium nitrate solution. The color of these films are orange and these films are shown to be electrochromic. The voltammogram is shown the asymmetry of the oxidation compared to the reduction wave under various supporting electrolytes. The standard heterogeneous electron-transfer rate for these films and bare Pt electrode were 0.49 ${\times}$ l0$^{-2}$ and 1.30 ${\times}$ l0$^{-2}$ cm/s, respectively, obtained using a rotating disc electrode. Rough D$_0$ values, evaluated from the Levich equation, for Fe(CN)$_6^{3-/4-}$ at both SF thin film and a bare Pt disc electrode were shown as 1.2l ${\times}$ l0-6 and 0.94 ${\times}$ l0$^{-6}$ cm$^2$/s, respectively. The conductivities, as determined from the slops of the i-V curves for a ca. 1 mm sample for dried SF potassium rich and deficient bulk samples pressed between graphite electrodes, were 9.34 ${\times}$ l0$^{-9}$ and 5.80 ${\times}$ l0$^{-9}$ (${\Omega}$${\cdot}$cm)$^{-1}$, respectively.