• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

• 전자공학회논문지T
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• 제36T권2호
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• pp.1-7
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• 1999

본 연구는 진공증착중합법에 의해 폴리이미드를 제작하고 박막의 절연파괴특성을 자기절연회복법에 의해 측정하였다. PMDA(Pyromellitic dianhydride)와 DDE(4,4'-diaminodiphenyl ether)를 증착 중합하여 Polyamic-acid(PAA)를 형성하고 이를 열처리함으로서 폴리이미드를 제조하였다. 제조된 박막의 특성을 조사하기 위해 주사형 전자현미경(SEM), 적외선분광장치(FT-IR) 및 오저전자분광장치(AES)를 사용하였다. 절연파괴특성 실험은 동일 시료에서 50회를 반복하였으며 25회 이상에서 절연파괴전계는 포화되었다. 열처리 온도를 200${^\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ 및 350${^\circ}C$로 변화했을 때 절연파괴전계는 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm로 변화하였다.