• Title/Summary/Keyword: SEG

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Virulence Genes of Staphylococcus aureus Isolated in Daegu and Gyeongsangbuk-do Areas (대구광역시와 경상북도 지역에서 분리한 Staphylococcus aureus 병독소 유전자의 분자적 연구)

  • Jeon, Seok-Jae;Lee, Hee-Moo
    • Korean Journal of Clinical Laboratory Science
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    • v.40 no.1
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    • pp.48-54
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    • 2008
  • Nine types of staphylococcal enterotoxin (SE) genes (sea~see, seg~sej), 3 types of virulence genes (eta, etb, tst), mecA and 16S rRNA as internal positive control were detected from 187 clinical MRSA (methicillin resistance Staphylococcus aureus) strains isolated from a variety hospitalized patients in Daegu and Gyeongsangbuk-do areas using the multiplex PCR. The frequency of the S. aureus strains harboring recently reported SE genes (seg~sej) were found to be very high (65.9%) and greater than that of the strains harboring classical SE (sea~see) genes (47.8%) as previously established. Taking into account that the newly described pairs form SE genes (i.e., sec+seg+sei, seg+sei) were many, in the other hand, single form SE genes (i.e., seg, seh, sei and sej) were rarely detected. The S. aureus with pairs form enterotoxigenic genes become more potentially toxigenic strains. Furthermore, this work indicated a systematic association between the seg and sei genes and their high incidence among the S, aureus strains, which suggests that these two SE's could be an important phylogenetic link among the staphylococcal enterotoxins.

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Optimization of Selective Epitaxial Growth of Silicon in LPCVD

  • Cheong, Woo-Seok
    • ETRI Journal
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    • v.25 no.6
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    • pp.503-509
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    • 2003
  • Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high-density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas-phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E-beam patterns, we evaluated and controlled selectivity loss and non-uniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.

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Water Quality Modeling of Daechong Reservoir by WASP5/EUTR05 Model (WASP5에 의한 대청호 수질모델링)

  • Lee, Jong Ho
    • Journal of Environmental Impact Assessment
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    • v.8 no.1
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    • pp.93-105
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    • 1999
  • Lately water quality of Daechong Reservoir has become more eutrophicated than ever before and there has been much concern over especially the eutrophication of the embayment near Daejon and Chongju Water Intake Tower every summer. The purpose of this study is to predict the impact of change in the pollutant loading, flowrate, nitrogen and phosphorus release from sediment, SOD(sediment oxygen demand) upon the water quality of Daechong Reservoir by WASP5/EUTR05 in order to suggest water quality management alternatives. The data of Sep. 1995 were used for the calibration of the model and those of Sep. 1997 was for verification. The result of the modeling can be summarized as follows. 1. The 50% increase(decrease) of pollutant loading has caused that of T-N concentration by 0.10-0.14 mg/l, T-P concentration by 0.003-0.005 mg/l, and CBOD concentration by 0.16-0.18 mg/l. But the ratio of DO change by the change of pollutant loading was relatively small. 2. The sensitivity test of NH4 flux to T-N and that of P04 flux to T-P shows that T-N and T-P concentration were changed more in the epilimnion segments (SEG4, SEG5, SEG6, SEG7) than the other segments. As SOD increases, DO was predicted to decrease more especially in the hypolimnion (SEG9-SEG14). 3. As flowrate increase, the concentration of T-N, T-P, and CBOD were predicted to decrease, but DO concentration increased especially in the hypolimnion segments(SEG11, SEG12, SEG13, and SEG14). As the flowrate changed from $119m^3/sec$ to $50m^3/sec$, the concentration of T-N and CBOD in the hypolimnion was predicted to decrease.

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The study on the Transistor Performance with SEG Process (SEG 공정 적용에 따른 Tr 특성 연구)

  • Lee, Sung-Ho;Kang, Sung-Kwan;Choi, Jay-Bok;Yoo, Yong-Ho;Song, Bo-Young;Ahn, Ju-Hyeon;Roh, Yong-Han
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.167-168
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    • 2007
  • Design Rule이 작아짐에 따라 Transistor performance 향상을 위한 여러 방안중 SEG 공정이 적용되고 있으며 이에 따른 Transistor 특성 연구 결과이다. SEG공정 적용시 SEG Profile에 따라 Transistor의 Short Channel Effect 열화가 발생하였고 그 원인은 Sidewall Facet발생으로 추정되며 이를 개선시 Tr 특성이 개선됨을 확인하였다.

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A Study of Performance Improvement through using extending Display of Iphone(smart phone) LCD(TFT or AMOLED) to overcome expression limit of Normal LCD(Seg) for Car audio (CAR audio용 일반 Seg LCD의 표현의 한계를 극복하기 위한 IPHONE(SMART PHONE) LCD(AMOLED,TFT)의 확장 DISPLAY 사용에 대한 성능 개선에 관한 연구)

  • Hwang, Man-Tae;Kim, Yound-Cil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.10a
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    • pp.325-328
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    • 2010
  • In this paper, To overcome expression limit of Normal LCD(Seg) for Car audio, We research using Smart phone(Iphone) LCD to overcome weakness of seg LCD, We can express detail LCD DISPLAY using Smartphone(iphone), We can call Car to phone, Smartphone(Iphone) Display can Normal Car audio function Display, using phone Application for car to phon.

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SEG Applications for Semiconductor Devices (선택적 단결정 실리콘 성장의 반도체 소자 적용)

  • Cheong, Woo-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.9-10
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    • 2005
  • Process diagrams of selective epitaxial growth of silicon(SEG) could be developed from CVD thermodynamics. They could not only be helpful with understanding of the mechanism, but also offer good processing guidelines in manufacturing high density devices. Through the process optimization skill, applications of SEG to high-density device structures could be possible without problems such as loading effect and facet generation, with producing outstanding electronic properties.

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The Correlation between Toxin Genotype and Antibiotic Resistance in Methicillin Resistant Staphylococcus aureus Isolated from Clinical Specimen of Intensive Care Unit (중환자실의 임상검체로부터 분리된 Methicillin 내성 Staphylococcus aureus의 독소유전자형과 항생제내성의 상관관계)

  • Park, Chul;Seong, Chi Nam
    • Korean Journal of Clinical Laboratory Science
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    • v.48 no.3
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    • pp.202-209
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    • 2016
  • This study is aimed to determine the correlation between the toxin gene types and antibiotic resistance from MRSA (methicillin-resistant Staphylococcus aureus). Fifty-two strains of MRSA, between January 2014, and December 2014, were isolated from clinical specimens obtained from 2,664 cases in the intensive care unit of a hospital in Suncheon, Jeonnam, Korea. Genes encoding mecA, enterotoxin (SE), toxic shock syndrome toxin-1 (TSST-1), exfoliative toxin (ET), and Panton-Valentine leukocidin (PVL) were detected by multiplex PCR-mediated amplification using specific primers. Toxin genes (seg and sei) were present in 40 strains (76.9%), followed by tst in 34 strains (65.4%). Other genes (eta, etb, sea, sed, see, seh, sej, and pvl) were not detected. Forty strains (76.9%) of MRSA had 2 or more toxin genes simultaneously; 5 coexistent toxin-genes (seb, sec, seg, sei, tst) were the most common in 28 strains (53.8%), and 6 strains (11.5%) had seg and sei genes. The coexistence of genes were 72.5~100%, showing a high correlation among genes (seb, sec, seg, sei and tst). As strains (seb, sec, tst) that had particular toxin genes (seb, sec, seg, sei, tst) in multiple showed 100% resistance to ciprofloxacin, clindamycin, erythromycin, we were able to find that seb, sec, and tst genes have a close relationship to the aforementioned antibiotics. It showed a higher resistance to ciprofloxacin, clindamycin, erythromycin, and tetracycline compared with strains that had toxin genes independent from multiple toxin genes.

Extracting Flooded Areas in Southeast Asia Using SegNet and U-Net (SegNet과 U-Net을 활용한 동남아시아 지역 홍수탐지)

  • Kim, Junwoo;Jeon, Hyungyun;Kim, Duk-jin
    • Korean Journal of Remote Sensing
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    • v.36 no.5_3
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    • pp.1095-1107
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    • 2020
  • Flood monitoring using satellite data has been constrained by obtaining satellite images for flood peak and accurately extracting flooded areas from satellite data. Deep learning is a promising method for satellite image classification, yet the potential of deep learning-based flooded area extraction using SAR data remained uncertain, which has advantages in obtaining data, comparing to optical satellite data. This research explores the performance of SegNet and U-Net on image segmentation by extracting flooded areas in the Khorat basin, Mekong river basin, and Cagayan river basin in Thailand, Laos, and the Philippines from Sentinel-1 A/B satellite data. Results show that Global Accuracy, Mean IoU, and Mean BF Score of SegNet are 0.9847, 0.6016, and 0.6467 respectively, whereas those of U-Net are 0.9937, 0.7022, 0.7125. Visual interpretation shows that the classification accuracy of U-Net is higher than SegNet, but overall processing time of SegNet is around three times faster than that of U-Net. It is anticipated that the results of this research could be used when developing deep learning-based flood monitoring models and presenting fully automated flooded area extraction models.

Excimer Laser-Assisted In Situ Phosphorus Doped $Si_{(1-x)}Ge_x$ Epilayer Activation

  • Bae, Ji-Cheul;Lee, Young-Jae
    • ETRI Journal
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    • v.25 no.4
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    • pp.247-252
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    • 2003
  • This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

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Mobile Performance Evaluation of ISDB-T Full-Segment TV Receiver (ISDB-T 풀세그 TV 수신기 이동 성능 평가)

  • Gu, Young Mo
    • Journal of Broadcast Engineering
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    • v.23 no.2
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    • pp.293-301
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    • 2018
  • In ISDB-T, which is Japanese digital terrestrial TV specification based on OFDM technology, 6MHz bandwidth is divided into 13 segments. Twelve segments (full-seg) are used for high definition broadcasting for fixed receivers and one segment (one-seg) for mobile receivers. Though one-seg supports high speed mobility by using QPSK modulation, it is not suitable for large display mobile devices because of its low data rate. Full-seg using 64QAM modulation also suffers from its low mobile performance. In this paper, mobile performance of ISDB-T full-seg receiver is evaluated by applying sub-carrier interference removing scheme, high speed mobile channel estimation scheme and antenna diversity scheme.