• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.1-6
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• 2009

This paper presents new high speed architecture using DBI(Data Bus Inversion) in DRAM. The DBI is one of the general methods in the signaling circuits to decrease the known problems such as SSO and LSI. Many architectures have been proposed to reduce the number of transitions on the data bus. In this paper, the DBI, the Analog Majority Voter (AMV) circuit, the GIO control circuit and the SSO algorithm are newly proposed. The power consumption can he reduced with the help of direct GIO inversion method and the eye diagram of data can be increased to 40ps. Using proposed DBI scheme can produce almost stable SI of DQs against high speed operation. The DBI is fabricated in 90nm CMOS Technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.15-22
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• 2008

The bulk-planer MOSFET has a scaling limitation due to the short channel effect (SCE). The Double-Gate MOSFET (DG-MOSFET) is a next generation device for nanoscale with excellent control of SCE. The quantum effect in lateral direction is important for subthreshold characteristics when the effective channel length of DG-MOSFET is less than 10nm, Also, ballistic transport is setting important. This study shows modeling and design issues of nanoscale DG-MOSFET considering the 2D quantum effect and ballistic transport. We have optimized device characteristics of DG-MOSFET using a proper value of $t_{si}$ underlap and lateral doping gradient.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of Korean Society of Forest Science
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• v.104 no.4
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• pp.685-696
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• 2015

This study intends to evaluate visual preference and image for 10 types of forest sceneries which have own distinct characteristics without overlapping each other among 22 types of beautiful forest sceneries based on Korea National Parks. Z scale and paired comparison methods were used to analyze visual preference for forest scenery, and SD scale method was also adopted to assess visual image for forest scenery. Experiments were conducted with 3 different university students groups. The results of this study can be summarized as follows. First, the evaluation results of Z scale (N=70) and paired comparison (N=64) methods show similar visual preference for different types of forest scenery. 'Scenery inside forests' and 'valley and rock' sceneries have the highest level of preference, and 'panorama of ridges', 'ridge of curious rock peaks', and 'waterfall and cliff' also have relatively higher preference level than others. However, 'community of dead trees' has the lowest preference in forest sceneries. Second, the factor analysis outputs of the image scores for beautiful forest scenery types by SD scale (N=66) show 3 factors of 'mysterious charm', 'colorful sense', and 'vividness/variety'. Examined the variables of forest scenery types for each factor, the image of 'mysterious charm' is based on the sceneries of mountain ridges, the image of 'colorful sense' is focused on the sceneries of color-expressed sense of the season, and the image of 'vividness/variety' is based on the sceneries of waterscape and curious rock peaks.

• The Journal of Korean Academy of Sensory Integration
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• v.7 no.1
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• pp.37-46
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• 2009

Background : Theory of Sensory Integration (SI) was initially developed with an effort to understand children's behavior by Jean Ayres and has been evolved with extensive research by occupational therapist practitioners and researchers since in the latter of the 20 century. With extension of recognition to SI, various professions begin to refer their clients who are children with sensory integration dysfunction. Upon those referrals, occupational therapists normally use Short Sensory Profile (SSP) to screen and decide whether SI therapeutic intervention is needed or not. Objective : Purpose of this study is (1) to examine any difference between different age groups and genders for children who are seven to nine years old; (2) to compare the score results of those Korean children with the original Standard which is established for American children: and (3) to compare tendency of response for each item between children with- and without SI dysfunction. This study was intended to validate test items of the SSP and determine whether the original standard of SSP is applicable for Korean children. Method : 155 students (81 for male, 74 for female) underwent SI evaluation using the Korean-translated SSP. 52 student (22 for male, 30 for female) were 7 years old, 54 students (32 for male, 22 for female) were 8 years old, 49 students (27for male, 22 for female) were 9 years old. Results : There is no significant difference of SSP score by neither age nor gender. In comparison the average score and sensory integrative disorder with the American Standard, there is significant difference on score of sub-item and total score. For six items, there is no significant difference on the tendency of response between children with- and without SI dysfunction. Conclusions : It is concluded that the original standard is suitable for Korean children aged seven to nine. The six test items that children without SI dysfunction shown similar tendency to respond are questionable to be appropriate as screening test item. It is suggested to proceed to do further item analysis study and extend the study to broad age groups, so develop the most appropriate Standard of SSP for Korean children.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.35-40
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• 2002

Ultra-power-saving SBR has been fabricated by using vanadium and molybdenum with low work function. Because reverse leakage current is increased in inverse proportion to work function, we implanted argon ion on the n-Si layer for decreasing leakage current. The dose and acceleration energy of the argon implantation in the silicon was 1$\times$10$^{14}$ ion/$\textrm{cm}^2$, 40 keV, respectively. The forward voltages drop of fabricated V-SBR and Mo-SBR were 0.25 V and 0.39 V at the same forward current density of 60 A/$\textrm{cm}^2$. As a result, it was found that the reverse leakage current of the fabricated V-SBR was reduced over 20$mutextrm{A}$ by the argon implantation in comparison with the no implanted V-SBR. Also, owing to argon implantation, the inferiority of characteristic of the SBR was not detected.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.1-6
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• 2010

A comparative analysis of quantum-mechanical and classical simulation regarding corner effect in a Saddle MOSFET has been carried out using a 3-D numerical simulator. The comparison has shown that quantum simulation gives correct description of device by providing accurate peak E-density position and magnitude at the Si-fin cross-section, hence accurate analysis of corner effect and its impact on device threshold voltage (Vth) characteristics is carried out. Moreover, rounding the Si-fin comers or lowering the body doping have been shown as two possible techniques to suppress the undesirable corner effect.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.41-41
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• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• MALSORI
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• no.43
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• pp.127-136
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• 2002

The speaker adaptation technique is generally used to reduce the speaker difference in speech recognition. In this work, we focus on the features fitted to a linear regression-based speaker adaptation. These are obtained by feature transformation based on independent component analysis (ICA), and the transformation matrix is learned from a speaker independent training data. When the amount of data is small, however, it is necessary to adjust the ICA-based transformation matrix estimated from a new speaker utterance. To cope with this problem, we propose a smoothing method: through a linear interpolation between the speaker-independent (SI) feature transformation matrix and the speaker-dependent (SD) feature transformation matrix. We observed that the proposed technique is effective to adaptation performance.