• Biomedical Science Letters
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• v.8 no.3
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• pp.137-142
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• 2002

The expression of CD44v is known as a marker of cancer progression and its metastasis in colorectal cancer. It has been known that CD44 variant containing sequences encoded by exon 11 (v6) confer metastatic potential to human colorectal cancer cells. The role of CD44 standard (CD44s) and CD44v6 in colorectal cancer was investigated in this study by immunohistochemical staining of the primary tumors obtained from the colorectal cancer patients. Immunohistochemical staining was performed in 40 patients with colorectal cancer who underwent curative surgery at Keimyung University hospital. The expression CD44s and CD44v6 was observed in 24/40 (60%) and 13/40 (32.5%) respectively. The expression of CD44v6 had correlation with TNM stage (P＜0.05), however CD44s had not any correlation with clinicopathological parameters. These results suggest that CD44v6 expression may give an information for tumor progression than decreased expression of CD44s in colorectal cancer cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.2
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• pp.73-80
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• 2015

It had been almost a half century since Apollo Mission was ended. However, in these days, a lot of researches are being conducted for restoration and making improvements in technologies used in Saturn V rocket's development. This study reviews the first stage of Saturn V rocket(S-IC), from development history to technologies in various subsystems such as engine purge system, POGO suppression system, hydraulic and pneumatic control system, propellant dispersion system, telemetry system and retrorocket system. Understandings of S-IC stage's operation systems would be helpful in understanding of launch vehicle system and reduction of time and cost in future development process.

• Journal of the Korea Society of Computer and Information
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• v.21 no.9
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• pp.79-84
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• 2016

In this paper we consider the problem of finding the triplet (S,${\pi}$,f), where $S{\subseteq}V$, ${\pi}$ is a sequence of nodes in S and $f:V{\backslash}S{\rightarrow}S$ for a given complete graph G=(V,E). In particular, there exist two costs, $c^V_{uv}$ and $c^D_{uv}$ for $(u,v){\in}E$, and the cost of triplet (S,${\pi}$,f) is defined as $\sum_{i=1}^{{\mid}S{\mid}}c^V_{{\pi}(i){\pi}(i+1)}+2$ ${\sum_{u{\in}V{\backslash}S}c^D_{uf(u)}$. This problem is motivated by the integrated routing of the vehicle and drone for urban delivery services. Since a well-known NP-complete TSP (Traveling Salesman Problem) is a special case of our problem, we cannot expect to have any polynomial-time algorithm unless P=NP. Furthermore, for practical purposes, we may not rely on time-exhaustive enumeration method such as branch-and-bound and branch-and-cut. This paper suggests the simple heuristic which is motivated by the MST (minimum spanning tree)-based approximation algorithm and neighborhood search heuristic for TSP.

• Journal of applied mathematics & informatics
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• v.41 no.4
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• pp.839-848
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• 2023

Let G be a simple undirected graph. A planar graph known as a Halin graph(HG) is characterised by having three connected and pendent vertices of a tree that are connected by an outer cycle. A subset S of V is said to be a dominating set of the graph G if each vertex u that is part of V is dominated by at least one element v that is a part of S. The domination number of a graph is denoted by the γ(G), and it corresponds to the minimum size of a dominating set. A dominating set S is called a secure dominating set if for each v ∈ V＼S there exists u ∈ S such that v is adjacent to u and S₁ = (S＼{v}) ∪ {u} is a dominating set. The minimum cardinality of a secure dominating set of G is equal to the secure domination number γ_s(G). In this article we found the secure domination number of Halin graph(HG) with perfet k-ary tree and also we determined secure domination of rooted product of special trees.

• Journal of applied mathematics & informatics
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• v.41 no.3
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• pp.633-645
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• 2023

In this paper, Completely V-Regular on semiring is defined and used to derive new theorems with some of its properties. This paper also illustrates V-Regular algebra and Completely V-Regular Algebra with examples and properties. By extending completely V-Regular to fuzzy, a new concept, fuzzy V-Regular is brought out and fuzzy completely V-Regular algebra is introduced too. It is also developed by defining the ideals of Completely V -Regular Algebra and fuzzy completely V-Regular algebra. Finally, this fuzzy algebra concept is applied in image processing to detect edges. This V-Regular Algebra is novel in the research area.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.10
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• pp.19-26
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• 2006

In this study, psychological assessment was carried out to investigate the driver's psychological characteristics by the change of the headlight. The participants were 20 men and 20 women in their 20s and thirty-two different conditions in combinations of waveform of light, voltage, and alteration time were used. The questionnaire for the assessment was evaluated by 8 subjective item and 5-point SD criteria of 19 pair's adjective. The results were as follows : 1. The assessment results from SD method indicated 4 factors by factor analysis, and it was shown that A waveform had significances in a sense of security and impetus and B waveform had a significance in a sense of security. The levels of the limitations for the voltage change were 12[V] in the factor of a sense of security and 11[V] in the factor of a sense of impetus for A waveform, 12.6[V] in the factor of a sense of security for B waveform. 2. The results of the subjective assessment showed that the limitation of A waveform's brightness change was 12[V]. Moreover, the limitations of voltage changes were 12.67[V] for B waveform brightness change, 12.12[V] for discomfort, 12.71[V] for darkness. And the limitation of C waveform's brightness change was 12[V].

• 전자공학회논문지 IE
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• v.48 no.4
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• pp.13-18
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• 2011

In this paper, we have examined electrical characteristics of LDO regulator according to the process variation using a 1 ${\mu}m$ 20 V high voltage CMOS process. The electrical analysis of LDO regulator have been performed with three kind of SPICE parameter sets (Typ : typical, FF : fast, SS : slow) by process variation which cause change of SPICE parameter such as threshold voltage and effective channel length of MOS devices. From simulation results, we confirmed that in case of SS type SPICE parameter set, the LDO regulator has 3.6 mV/V line regulation, 0.4 mV/mA load regulation and 0.86 ${\mu}s$ output voltage settling time. And in case of Typ type SPICE parameter set, the LDO regulatorhas 4.2 mV/V line regulation, 0.44 mV/mA load regulation and 0.62 ${\mu}s$ output voltage settling time. Finally, in the FF type SPICE parameter set, the LDO regulator has 7.0 mV/V line regulation, 0.56 mV/mA load regulation and 0.27 ${\mu}s$ output voltage settling time.