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DISTRIBUTION OF VIBRIO PARAHAEMOLYTICUS AND V. ALGINOLYTICUS IN THE COAST OF CHUNG-MU (충무연안의 Vibrio parahaemolyticus와 V. alginolyticus의 분포)

  • LEE Won-Jae;AHN Cheol-Woo
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.9 no.4
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    • pp.233-237
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    • 1976
  • This study was carried out to evaluate the distribution of Vibrio parahaemolyticus and Vibrio alginolyticus in sea water, mud, oyster (Crassostrea gigas) and sea mussel (Mytilus edulis) collected from the coast of Chung-mu during the period from July 1975 to September 1976. Fifty one strains of V. parahaemolyticus and 160 strains of V.. alginolyticus were isolated from 420 samples. The distribution varied by month showing the highest in July through September The isolation ratio of V. parahaemolyticus was $28\%$ for mud, $24\%$ for sea water, $5\%$ for sea mussel and $4.2\%$ for oyster. The morphological, physiological and biochemical characteristics of 211 isolated strains were coincided with those of the typical V. parahaemolyticus and V. alginolyticus.

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InSnZnO 산화물 반도체 박막의 열처리 영향에 따른 박막 트랜지스터의 전기적 분석

  • Lee, Jun-Gi;Han, Chang-Hun;Choe, Byeong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.245-245
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    • 2012
  • 차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

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Experimental Investigation of Physical Mechanism for Asymmetrical Degradation in Amorphous InGaZnO Thin-film Transistors under Simultaneous Gate and Drain Bias Stresses

  • Jeong, Chan-Yong;Kim, Hee-Joong;Lee, Jeong-Hwan;Kwon, Hyuck-In
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.239-244
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    • 2017
  • We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

SIMPLICIAL WEDGE COMPLEXES AND PROJECTIVE TORIC VARIETIES

  • Kim, Jin Hong
    • Bulletin of the Korean Mathematical Society
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    • v.54 no.1
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    • pp.265-276
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    • 2017
  • Let K be a fan-like simplicial sphere of dimension n-1 such that its associated complete fan is strongly polytopal, and let v be a vertex of K. Let K(v) be the simplicial wedge complex obtained by applying the simplicial wedge operation to K at v, and let $v_0$ and $v_1$ denote two newly created vertices of K(v). In this paper, we show that there are infinitely many strongly polytopal fans ${\Sigma}$ over such K(v)'s, different from the canonical extensions, whose projected fans ${Proj_v}_i{\Sigma}$ (i = 0, 1) are also strongly polytopal. As a consequence, it can be also shown that there are infinitely many projective toric varieties over such K(v)'s such that toric varieties over the underlying projected complexes $K_{{Proj_v}_i{\Sigma}}$ (i = 0, 1) are also projective.

The Analysis of Device Models and the Method of Increasing Compatibility Between Device Models for M&S V&V of NetSPIN (NetSPIN M&S 모델 V&V를 위한 장비 모델 및 모델간 호환성 증진방안 분석)

  • Park, In-Hye;Kang, Seok-Joong;Lee, Hyung-Keun;Shim, Sang-Heun
    • Journal of Information Technology Services
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    • v.11 no.sup
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    • pp.51-60
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    • 2012
  • In this paper, we provide the analysis of device model and method between device models for compatible M&S V&V of the NetSPIN. First of all, we analysis features, structure, and classification of the NetSPIN. The second, as a part of reliable V&V process, we analysis network system modeling process, correlation between device modeling process for M&S of the NetSPIN. The third, we suggest making a kind of pool of reference model and module of devices for the increase factor of reuse between device model. We also, at the point view of M&S V&V, conclude that there is the validity of the fidelity in device modeling process. Through the analysis of the NetSPIN device model and suggestion of the method for higher compatibility between device modes, the development process of device model be clearly understood. Also we present the effective method of the development for reliable device mode as the point of V&V.

Site Characterization using Shear-Wave Velocities Inverted from Rayleigh-Wave Dispersion in Chuncheon, Korea (레일리파 분산을 역산하여 구한 횡파속도를 이용한 춘천시의 부지특성)

  • Jung, JinHoon;Kim, Ki Young
    • Geophysics and Geophysical Exploration
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    • v.17 no.1
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    • pp.1-10
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    • 2014
  • To reveal and classify site characteristics in densely populated areas in Chuncheon, Korea, Rayleigh-waves were recorded at 50 sites including four sites in the forest area using four 1-Hz velocity sensors and 24 4.5-Hz vertical geophones during the period of January 2011 to May 2013. Dispersion curves of the Rayleigh waves obtained by the extended spatial autocorrelation method were inverted to derive shear-wave velocity ($v_s$) models comprising 40 horizontal layers of 1-m thickness. Depths to weathered rocks ($D_b$), shear wave velocities of these basement rocks ($v_s^b$), average velocities of the overburden layer ($\bar{v}_s^s$), and the average velocity to a depth of 30 m ($v_s30$), were then derived from those models. The estimated values of $D_b$, $v_s^b$, $\bar{v}_s^s$, and $v_s30$ for 46 sites at lower altitudes were in the ranges of 5 to 29 m, 404 to 561 m/s, 208 to 375 ms/s, and 226 to 583 m/s, respectively. According to the Korean building code for seismic design, the estimated $v_s30$ indicates that the lower altitude areas in Chuncheon are classified as $S_C$ (very dense soil and soft rock) or $S_D$ (stiff soil). To determine adequate proxies for $v_s30$, we compared the computed values with land cover, lithology, topographic slope, and surface elevation at each of the measurement sites. Due to a weak correlation (r = 0.41) between $v_s30$ and elevation, the best proxy of them, applications of this proxy to Chuncheon of a relatively small area seem to be limited.

Development of HVPS of the X-Band TWTA for Military Transportable Satellite Communications (군위성통신 차량용단말 X-대역 TWTA용 HVPS 개발)

  • Park, Jae-Don;Jang, Jeen-Sang;Dong, Moon-Ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.12A
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    • pp.1168-1173
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    • 2005
  • The HVPS of the TWTA for military satellite communications is developed and tested. With 380 V input DC voltage, the HVPS provides -10.95 kV for Cathode, -4.27 kV for Collectorl and -6.57 kV for Collector2 of the TWT that generates 600 W X-band output signal power. The total output power of the HVPS is about 1.6 kW. The voltage ripples of Cathode, Collectorl and Collector2 are 6 V, 12 V and 6 V, respectively, which are only $0.055\%,\;0.281\%$ and $0.091\%$ compared to the absolute output voltages.

A COVERING CONDITION FOR THE PRIME SPECTRUMS

  • Hwang, Chul-Ju
    • East Asian mathematical journal
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    • v.21 no.1
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    • pp.61-64
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    • 2005
  • Let R be a commutative ring with identity, and let $f,\;g_i(i=1,\;\ldots,\;n),\;g_{\alpha}(\alpha{\in}S)$ be elements of R. We show that the following statements are equivalent; (i) $X_f{\subseteq}{\cup}_{\alpha{\in}S}X_{g\alpha}$ only if $X_f{\subseteq}X_{g\alpha}$ for some $\alpha{\in}S$, (ii) $V(f){\subseteq}{\cup}_{\alpha{\in}S}V(g_{\alpha})$ only if $V(f){\subseteq}V(g_{\alpha})$ for some $\alpha{\in}S$, (iii) $V(f){\subseteq}{\cup}^n_{i=1}V(g_i)$ only if $V(f){\subseteq}V(g_i)$ for some i, (iv) Spec(R) is linearly ordered under inclusion.

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Antimicrobial Activity of Maesil (Prunus mume) Extract against Vibrio vulnificus (비브리오 패혈증균에 대한 매실 추출물의 항균활성)

  • Ha, ea-Man;Jeon, Doo-Young;Im, Hyun-Chul;Yoon, Yeon-Hee;Shin, Mi-Yeong;Yoon, Ki-Bok;Kim, Jung-Beom
    • Journal of Food Hygiene and Safety
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    • v.32 no.2
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    • pp.163-169
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    • 2017
  • The purpose of this study was to estimate the antimicrobial activity of Maesil (Japanese apricot, Prunus mume) extract against Vibrio vulnificus. The strains tested in the study were 28 V. vulnificus isolates originated from fish, seawater, mud flat and seawater in fish restaurant. The vvhA gene was detected using real-time PCR and biochemical identification expressed above good identification in 28 isolates of V. vulnificus. All of V. vulnificus used in this study was susceptible to tetracycline and chloramphenicol antibiotics. These two antibiotics were considered to be useful for the treatment of patients. Maesil extracts 2.5% and 5% showed antimicrobial activity against V. cholerae NCCP 13589 and V. parahemolyticus NCCP 11143. V. vulnificus isolate and V. vulnificus NCCP 11135 showed growth inhibition at 1.25%, 2.5% and 5% of Maesil extract, respectively. Compared with V. cholerae and V. parahemolyticus, the antibacterial activity of Maesil extract against V. vulnificus was high. The minimum bactericidal concentration of Maesil extract for V. vulnificus was 1.6%. These results revealed that Maesil extract was found to be very useful for inhibiting the growth of V. vulnificus and can be expected to prevent food poisoning caused by V. vulnificus.