• Title/Summary/Keyword: S.O.T. Technique

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Di(propylene glycol) Methylether (DPGME) Sensing Characteristics of SnO2-ZnO Sensor (SnO2센서의 ZnO 첨가량에 따른 di(propylene glycol) methylether (DPGME)에 대한 반응 특성)

  • Cha G. Y;Baek W. W;Yun K. Y;Lee S. T;Choi N. J;Lee D. D;Huh J. S
    • Korean Journal of Materials Research
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    • v.14 no.3
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    • pp.224-228
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    • 2004
  • Respectively the powder made of ZnO added $SnO_2$ was prepared by coprecipitation method and the thick film gas sensor was fabricated by screen-printing technique, The morphology and phase of the powder and film was investigated by SEM and XRD. The specific area of the particle was linearly increased with ZnO contents. Target gas was di(propylene glycol) methylether ($CH_3$($OC_3$$H_{6}$ )$_2$OH, DPGME), which is simulant gas of blister gas. The gas sensing characteristics for DPGME were examined with flow type measurement system and the concentrations of target gas were controlled from 500 ppb to 1500 ppb. ZnO (2 wt%) added $SnO_2$ showed maximum sensitivity to DPGME at $300^{\circ}C$.

Fabrication Process of Single Flux Quantum ALU by using Nb Trilayer (Nb Trilayer를 사용한 단자속양자 논리연산자의 제작공정)

  • Kang, J.H.;Hong, H.S.;Kim, J.Y.;Jung, K.R.;Lim, H.R.;Park, J.H.;Hahn, T.S.
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.181-185
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    • 2007
  • For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

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$CeO_2$ Single Buffer Deposition on RABiTS for SmBCO Coated Conductor

  • Kim, T.H.;Kim, H.S.;Ha, H.S.;Yang, J.S.;Lee, N.J.;Ha, D.W.;Oh, S.S.;Song, K.J.;Jung, Y.H.;Pa, K.C.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.180-181
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    • 2006
  • As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique 100nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $0.4{\mu}m$-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-W substrate. Critical current of 118A/$cm^2$ was obtained for the SmBCO coated conductors.

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A Study on Development Strategy of Korean Hidden Champion Firm Utilizing the SWOT/AHP Technique (SWOT/AHP 기법을 이용한 한국형 히든챔피언 기업의 발전전략에 관한 연구)

  • Chung, Youn-Kyaei;Lee, Sang-Suk
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
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    • v.8 no.3
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    • pp.97-111
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    • 2013
  • This study reviews preceding research for detailed factors to establish development strategies for Korean Hidden Champion firms and classifies strategy factors into internal ones and external ones through specialists' opinions to draw strengths, weaknesses, opportunities and threats of each factor. It also sets hierarchical model to draw up a survey, distributes the survey to groups of specialists and enterprises respectively and then examines consistency ratio. Fifty-four copies of survey whose reliability on responses is secured through examining the consistency ratio are evaluated with their relative importance in factors by using SWOT/AHP technique and their order of priority is determined. Based on their results, development strategies for Korean Hidden Champion firms are established. SWOT/AHP analyses results show that external factors are with the opportunity of industry growth and the threat of intensified competition and market uncertainty and internal factors are with the strength in order of technological competence, construction competence in customer relation and marketing competence. The weakness in the lack of funds, lack of brand awareness in order. This result suggests that external environments of enterprises that more emphasis should be put on the industry growth and aggressive strategies cannot help but be adopted even in a global competition getting fiercer every day are seen more important. Then, it also seems to be thought that the technological competence including R&D and specialization, construction competence in customer relation and marketing competence should internally chosen for strategies to support strategies. The order of priority in development strategies for Korean Hidden Champion firms is drawn as; (i) aggressive S/O strategy which utilizes opportunities by taking advantage of strengths, (ii) W/O strategy which utilizes opportunities by supplementing weaknesses, (iii) diversified S/T strategy which utilizes strengths to make up for threats and (iv) defensive W/T strategy which supplements weaknesses to overcome threats.

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Characteristics Comparison of Prepared Films According to Influence of Adsorption Inhibitor in the Condition of Deposition (PVD증착용 흡착인히비터의 영향에 따른 제작막의 특성 비교)

  • 이찬식;윤용섭;권식철;김기준;이명훈
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.67-67
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    • 2001
  • The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

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Atomic layer chemical vapor deposition of Zr $O_2$-based dielectric films: Nanostructure and nanochemistry

  • Dey, S.K.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.64.2-65
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    • 2003
  • A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{+}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{+}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

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Changes of EEG Coherence in Narcolepsy Measured with Computerized EEG Mapping Technique (기면병에서 전산화 뇌파 지도화 기법으로 측정한 뇌파 동시성 시성 변화)

  • Park, Doo-Heum;Kwon, Jun-Soo;Jeong, Do-Un
    • Sleep Medicine and Psychophysiology
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    • v.8 no.2
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    • pp.121-128
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    • 2001
  • Objectives: In narcoleptic patients diagnosed with ICSD (international classification of sleep disorders, 1990) criteria, nocturnal polysomnography, and MSLT (multiple sleep latency test), we tried to find characteristic features of quantitative electroencephalography (QEEG) in a wakeful state. Methods: We compared eight drug-free narcoleptic patients with sex- and age-matched normal controls, using computerized electroencephalographic mapping technique and spectral analysis. Absolute power, relative power, interhemispheric asymmetry, interhemispheric and intrahemispheric coherence, and mean frequency in each frequency band (delta, theta, alpha and beta) were measured and analyzed. Results: Compared with normal controls, narcoleptic patients showed decrease in monopolar interhemispheric coherence of alpha frequency bands in occipital ($O_1/O_2$), parietal ($P_3/P_4$), and temporal ($T_5/T_6$) areas and beta frequency band in the occipital ($O_1/O_2$) area. Monopolar intrahemispheric coherences of alpha frequency bands in left hemispheric areas ($T_3/T_5$, $C_3/P_3$ & $F_3/O_1$) decreased. Decrease of monopolar interhemispheric asymmetry of delta frequency band in the occipital ($O_1/O_2$) area was also noted. The monopolar absolute powers of beta frequency bands decreased in occipital ($O_2,\;O_z$) areas. Conclusion: Decreases in coherences of narcoleptic patients compared with normal controls may indicate fewer posterior neocortical interhemispheric neuronal connections, and fewer left intrahemispheric neuronal connections than normal controls in a wakeful state. Therefore, we suggest that abnormal neurophysiological sites of narcolepsy may involve complex areas such as neocortex and subcortex as well as the brainstem.

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Content-based Music Information Retrieval using Pitch Histogram (Pitch 히스토그램을 이용한 내용기반 음악 정보 검색)

  • 박만수;박철의;김회린;강경옥
    • Journal of Broadcast Engineering
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    • v.9 no.1
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    • pp.2-7
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    • 2004
  • In this paper, we proposed the content-based music information retrieval technique using some MPEG-7 low-level descriptors. Especially, pitch information and timbral features can be applied in music genre classification, music retrieval, or QBH(Query By Humming) because these can be modeling the stochasticpattern or timbral information of music signal. In this work, we restricted the music domain as O.S.T of movie or soap opera to apply broadcasting system. That is, the user can retrievalthe information of the unknown music using only an audio clip with a few seconds extracted from video content when background music sound greeted user's ear. We proposed the audio feature set organized by MPEG-7 descriptors and distance function by vector distance or ratio computation. Thus, we observed that the feature set organized by pitch information is superior to timbral spectral feature set and IFCR(Intra-Feature Component Ratio) is better than ED(Euclidean Distance) as a vector distance function. To evaluate music recognition, k-NN is used as a classifier

Mechanical Properties and Microstructure on Dissimilar Friction-Stir-Weld of Aluminium Alloys (FSW된 이종알루미늄합금의 접합 특성 및 미세 조직)

  • Han, Min-Su;Jang, Seok-Ki
    • Journal of Advanced Marine Engineering and Technology
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    • v.35 no.1
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    • pp.75-81
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    • 2011
  • Dissimilar joining of aluminum 6061-T6 alloy to aluminum 5083-O alloy was performed using friction-stir welding technique. The mechanical properties, hardness, macro- and micro-structure on dissimilar friction-stir-weld aluminium alloy were investigated. Mechanical properties of the weld mainly depend on which Al alloy is placed at the retreating sides of the rotating tool respectively during dissimilar friction-stir weld because the microstructure of stir zone was mainly composed of welded Al alloys of the retreating side. Onion ring pattern was observed like lamella structure stacked by each Al alloy in turn. It apparently results in defect-free weld zone that traverse speed was changed to 124 mm/min under conditions of tool rotation speed like 1250 rpm with 5 mm of tool's prove diameter, 4.5 mm of prove length, 20 mm of shoulder diameter, and $2^{\circ}$ of tilting angle. The 231 MPa of ultimate stress and the 121 MPa of yield point are obtained about the friction-stir-welded Al 6061-T6(AS) to Al 5083-O(RS).

Comparison of $Y_2O_3$ and ZnO Nanoparticles Introduced in YBCO Multilayered Films as Artificial Pinning Centers (YBCO 다층박막에 첨가된 $Y_2O_3$와 ZnO 나노입자의 자속꽂음 중심 특성 비교)

  • Wie, C.H.;Tran, D.H.;Putri, W.B.K.;Kang, B.;Kim, Y.J.;Oh, S.J.;Lee, N.H.;Kang, W.N.
    • Progress in Superconductivity
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    • v.13 no.2
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    • pp.90-96
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    • 2011
  • We investigated the properties of artificial pinning centers of YBCO multilayer films in which $Y_2O_3$ and ZnO nanoparticles are uniformly introduced by using the pulsed laser deposition (PLD) technique. $Y_2O_3$ and ZnO nanoparticles were deposited on top of YBCO buffer layer and the density of nanoparticles was controlled by varying the number of nanoparticle layers. YBCO superconducting layers with total thickness of 250 nm were deposited on top of $Y_2O_3$ and ZnO nanoparticles. Based on analyses of the surface morphology, the transition temperature $T_c$, and the critical current density $J_c$, we discussed the difference between the two kinds of nanoparticles as flux pinning centers.