• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.513-516
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• 2008

The luminance efficiency of the red organic light-emitting devices fabricated utilizing a double electron transport layer (ETL) consisting of an Al-doped and an undoped layer was investigated. The Al atoms existing in the ETL acted as hole blocking sites, resulting in an increase in the luminance efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.1-257.1
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• 2015

Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• BMB Reports
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• v.44 no.5
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• pp.323-328
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• 2011

We screened four B. thuringiensis strains whose parasporal inclusions contained the S-layer protein (SLP), and cloned two slp genes from each strain. Phylogenetic analysis indicated these SLPs could be divided into two groups, SLP1s and SLP2s. To confirm whether SLPs were present in the S-layer or as a parasporal inclusion, strains CTC and BMB1152 were chosen for further study. Western blots with isolated S-layer proteins from strains CTC and BMB1152 in the vegetative phase showed that SLP1s and SLP2s were constituents of the S-layer. Immunofluorescence utilizing spore-inclusion mixtures of strains CTC and BMB1152 in the sporulation phase showed that SLP1s and SLP2s were also constituents of parasporal inclusions. When heterogeneously expressed in the crystal negative strain BMB171, four SLPs from strains CTC and BMB1152 could also form parasporal inclusions. This temporal and spatial expression is not an occasional phenomenon but ubiquitous in B. thuringiensis strains.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.575-575
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• 2012

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.615-620
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• 1996

Chromium-Molybdenum steel was plasma-nitrided at 823 K for 10.8 ks in an atmosphere of 30% $N_2$-70% $H_2$ gas under 665 Pa without and with a subsidiary cathode of $MoS_2$ to compare ion-nitriding and plasma-sulfnitriding using subsidiary cathode. When the steel was ion-nitrided without $MoS_2$, iron nitride layer of 4$\mu\textrm{m}$ and nitrogen diffusion layer of 400mm were formed on the steel. A compound layer of 15$\mu\textrm{m}$ and nitrogen diffusion layer of 400$\mu\textrm{m}$ were formed on the surface of the steel plasma-sulfnitrided with subsidiary cathode of $MoS_2$. The compound layer consisted of FeS containing Mo and iron nitrides. The nitrides of $\varepsilon$-$Fe_2$, $_3N$ and $\gamma$-$Fe_4N$ formed under the FeS. The thicker compound layer was formed by plasma-sulfnitriding than ion-nitriding. In plasma-sulfnitriding, the surface hardness was about 730 Hv. The surface hardness of the steel plasma-sulfnitrided with $MoS_2$ was lower than that of ion-nitrided without $MoS_2$. This may be due to the soft FeS layer formed on the surface of the plasma-sulfnitrided steel.

• Journal of the Korean GEO-environmental Society
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• v.12 no.10
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• pp.13-22
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• 2011

In this study, features of correlation between S-velocity and N value are derived from 9 suspension PS layers in Chungcheong Buk-do. S-velocity to be measured on Chungcheong Buk-do is classified into 5 as conditions of stratum that are ; cohesive soil layer, sandy soil layer, gravel layer, weathering soil layer, weathered rock layer. Each correlation formulas between N value by SPT and S-velocity is proposed from these classifications. And correlation formula for whole soil body except weathered rock layer also is proposed for reference. Corelation formulas developed this study formed square expression considering existing formulas produced internationally. Strength parameter converted to linear if N value is more than 50. Features of proposed formula which came up with comparative analysis of international result of cohesive soil layer and sandy soil layer and gravel layer show similar to existing ones. But there is deference that result of correlation formula for weathered rock layer is a little smaller than domestic formula's one. Because correlations of weathered rock layer above the N value of 50 is converted into a linear formation.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.151-152
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• 2002

An oxidized surface layer was intentionally formed on a sputtered $MoS_2$ film by introducing oxygen gas in the final stage of sputtering process. The film showed longer life than the normal Ar-sputtered film when the surface layer was slightly oxidized. A XPS analysis revealed co-existence of $MoS_2$ and $MoO_3$ in the surface layer. suggesting that the existence of some amount of oxides in the surface layer had beneficial effect. A confusing result was obtained: the life was much shorter than normal Ar-sputtered film when the film was exposed to $O_2$ environment for 1 minute after normal Ar-sputtering, although almost no oxide was detected in XPS analysis.