• 제목/요약/키워드: S-band

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Potential Use of Airborne Synthetic Aperture Radar to Monitor Agricultural Land Uses: A Case Study in Thailand

  • Wanpiyarat, V.;Buapradubkul, D.;Chutirattanaphan, S.
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2003년도 Proceedings of ACRS 2003 ISRS
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    • pp.44-46
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    • 2003
  • In 1996, Thailand's participation in the Pacific Rim as a part of NASA's Mission to Planet Earth (MTPE) Program, was titled 'AIRSAR Thailand Project'. In this project the Department of Land Development utilized Topographic SAR (TOPSAR) which had multi-frequencies: C band, L band, and P band with multi-polarization: HH, VV, and HV as well as C band VV DEM. Satellite data such as LANDSAT TM was also utilized for optimal use. Results of AIRSAR image processing including data fusion among difference wavelength bands and polarization revealed the quality of AIRSAR that best suit for detection of agricultural land uses. The HH-L band AIRSAR was proven to be useful to distinguish among crop types when combined with appropriate data. The HH, VV, and HV-P band enhanced surface characteristics of swamp forest and wetland. In addition, TOPSAR has its great advantage for identification of salt farms and shrimp ponds.

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Tuner System을 이용한 밀리미터파 탐색기용 W-band MMIC 저잡음 증폭기 (W-band MMIC Low Noise Amplifier for Millimeter-wave Seeker using Tuner System)

  • 안단;김성찬;이진구
    • 대한전자공학회논문지TC
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    • 제48권11호
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    • pp.89-94
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    • 2011
  • 본 논문에서는 밀리미터파 Tuner system을 이용하여 밀리미터파 탐색기에 적용 가능한 W-band MMIC 저잡음 증폭기를 구현하였다. 저잡음 증폭기를 위해 구현된 MHEMT의 측정결과 692mA/mm의 드레인 전류 밀도, 726mS/mm의 최대전달컨덕턴스를 얻었으며, RF 특성으로 전류이득차단주파수는 195GHz, 최대공진주파수는 305GHz의 양호한 성능을 나타내었다. 제작된 W-band 저잡음 증폭기의 측정결과 94GHz에서 7.42dB의 우수한 S21 이득 특성을 얻었으며, 잡음 지수의 측정결과 94.2GHz에서 2.8dB의 잡음 특성을 얻었다.

과학기술위성 3호 S-대역 송신기 인증모델 설계 및 제작 (Design and Implementation of Engineering Qualification Model of S-Band Transmitter for STSAT-3)

  • 오승한;서규재;오대수;이정수;오치욱
    • 한국항공우주학회지
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    • 제38권1호
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    • pp.80-86
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    • 2010
  • 본 논문은 현재 KAIST 인공위성연구센터(SaTReC)에서 개발하고 있는 과학기술위성3호 (STSAT-3) 위성본체의 S대역 통신채널 중 송신기 개발에 관하여 서술하고 있다. STSAT-3의 통신시스템은 위성제어 및 상태정보 전송을 위하여 S대역을 사용하며 임무수행용 통신채널로는 X대역을 사용하고 있다. S대역 송신기(S band Transmitter, STX)는 변조기, 주파수 합성기, 파워 앰프, 전력공급기 로 구성되어 있다. 변조 방법으로는 주파수 천이방식(Frequency Shift Keying, FSK)을 사용 하며 위성체와는 RS-422통신 방식을 이용한다. STSAT-3의 STX는 모듈화에 근거하여 설계 및 제작 되었으며 1.5W(31.7dBm) 송신 출력에 1E-5 비트오율(BER) 성능을 만족한다. 현재 성능시험, 환경시험(진동시험, 열진공시험)을 성공적으로 마쳤다.

Hot wall epitaxy방법에 의한 AgInS2 박막의 성장과 광전류 특성 (Growth and Photocurrent Properties for the AgInS2 Epilayers by Hot Wall Epitaxy)

  • 김혜숙;홍광준;정준우;방진주;김소형;정태수;박진성
    • 한국재료학회지
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    • 제12권7호
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    • pp.587-590
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    • 2002
  • A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

Photoluminescence of Nanocrystalline CdS Thin Films Prepared by Chemical Bath Deposition

  • Park, Wug-Dong
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.170-173
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    • 2010
  • Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties

  • Chuan, M.W.;Wong, K.L.;Hamzah, A.;Rusli, S.;Alias, N.E.;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • 제9권2호
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    • pp.105-112
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    • 2020
  • Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

과학기술위성 3호 S 대역 수신기 기술인증모델 개발 (Engineering Qualification Model Development of S-band Receiver for STSAT-3)

  • 이정수;오승한;서규재;오치욱;명로훈
    • 한국항공우주학회지
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    • 제37권6호
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    • pp.609-614
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    • 2009
  • 과학기술위성 3호의 TT&C 통신 서브시스템은 위성의 텔레메트리(Telemetry) 신호를 지상국에 송신하고 지상국으로부터의 명령(Command) 신호를 수신하기 위한 통신 경로로 구성된다. 지상국으로부터의 명령신호를 수신하기 위해 S 대역 수신기가 사용되며, 현재 기술인증모델을 설계 및 제작하였다. 설계된 S 대역 수신기는 구조를 간단하게 하기 위해 주파수 하향변환 방식으로 Single Conversion 방식을 사용하였으며, DC-DC Converter과 EMI Filter을 포함한다. 또한 디지털 복조부를 FPGA를 이용하여 구현하였으며, 데이터 인터페이스로 RS-422을 사용하였다. S 대역 수신기는 기능시험과 환경시험을 수행한 결과 과학기술위성 3호의 요구조건을 모두 만족하는 것으로 나타났다.

위성을 이용한 멀티미디어 서비스의 요소 기술과 제공 현황 (Core Technology and Service Trends of Multimedia Service Using Satellite)

  • 김정호
    • 기술사
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    • 제34권4호
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    • pp.36-40
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    • 2001
  • Multimedia service via satellite Is supported voice, data, Image and video signals. The representation case model of satellite multimedia are satellite TV. satellite Internet. In the early 1990s, satellite communication and broad casting services successfully expanded form C/Ku band to Ka band. The benefits of operation at Ka-band are greater bandwidth available to accommodate the increased demand for high-speed Information exchange. By the early years of the 21s1 century, millions of households worldwide with dual Ku / Ka-band dishes Satellite multimedia systems receive hundreds of TV channels, originating from around the world, and delivering entertainment, information and education. Many Ku-band satellites have been ordered, but few Ka-band systems are moving into production. So Ka-band systems are characterized that low-cost access to low and high peed, two-way voice, data, and video communications.

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대칭형 결합선로를 이용한 BPF의 설계 및 구현 (Design and Implementation of BPF Using a Symmetric Coupled Line)

  • 강상기;최홍택;이재명
    • 한국정보통신학회논문지
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    • 제13권7호
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    • pp.1255-1260
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    • 2009
  • 마이크로스트립 인터디지털(interdigtal) 여파기는 공진기의 폭, 길이, 공진기 사이의 간격과 탭의 위치로 설계하는데, 설계파라미터의 수를 줄이는 것이 구현 측면에서 유리하다. 본 논문에서는 마이크로스트립 인터디지털 여파기의 설계파라미터 중에서 공진기의 폭을 고정시킨 것과 서로 다른 폭을 갖는 두 종류의 여파기를 국내 UWB(Ultra Wide-Band) 주파수 대역에서 설계 및 구현하였다. 여파기의 성능 측정 결과 공진기의 폭을 고정한 low-band high 여파기의 삽입손실은 1.49dB, -10dB 대역폭은 750MHz였고, 4.8GHz에서 -35.7dB의 감쇄특성을 가졌으며, S11은 -13dB 이하로 측정되었다. 공진기의 폭이 서로 다른 low-band 여파기는 삽입손실 1.6dB, -10dB 대역폭은1.63GHz로 측정되었고, S11은 -8dB 이하로 측정되었다.