• 한국분말재료학회지
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• 제19권6호
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• pp.451-457
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• 2012

Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.

• Bulletin of the Korean Chemical Society
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• 제7권4호
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• pp.257-262
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• 1986

Thixotropy is a time-dependent shear-thinning phenomenon. We derived a new thixotropic formula which is based on the generalized viscosity formula of Ree and Eyring, $f={\Sigma}\frac{X_i}{{\alpha}_i}sinh^{-1}$ () (Refer to the text concerning the notation.) The following is postulated: (1) thixotropy occurs when small flow units attached to a large flow unit separate from the latter under stress (2) elastic energy(${\omega}$) is stored on the large flow unit during the flow process, and (3) the stored energy contributes to decrease the activation energy for flow. A new thixotropic formula was derived by using these postulations, $f={\frac}{X_0{\beta}_0}{\alpha_0}{\dot{s}}+{\frac}{X_1{\beta}_1}{{\alpha}_1}{\dot{s}}+{\frac}{X_2}{{\alpha_x}}sinh^{-1}$[$({\beta}_0)_2$ exp $(-C_2{\dot{s}}^2/RT){\cdot}{\dot{s}}$] f is the shear stress, and s is the rate of shear. In case of concentrated solutions where the Newtonian flow units have little contribution to the viscosity of the system, the above equation becomes, $f=\frac{X_2}{\alpha_2}sinh^{-1}$[$({\beta}_0)_2$ exp $(-C_2{\dot{s}}^2/RT){\cdot}{\dot{s}}$]. In order to confirm these formulas, we applied to TiO2(anatase and rutile)-water, printing ink and mayonnaise systems. Good agreements between the experiment and theory were observed.

• Journal of the Optical Society of Korea
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• 제19권3호
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• 대한전자공학회논문지SD
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• 제42권1호
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• pp.39-46
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• 2005

본 연구에서는 광논리 및 광접속에 응용할 수 있는 GaAs/AIGaAs 구조의 완전 공핍 광 싸이리스터(depleted optical thyristor, DOT)에 1/4 파장 거울층 (quarter wavelength reflector stacks, QWRS)을 제작하여 특성을 측정 분석하였다. 바닥면에 위치한 QWRS는 광 방출 효율뿐만 아니라 흡수 효율을 증가시킨다. 바닥면에 QWRS를 넣은 것과 그렇지 않은 두가지의 DOT를 제작하여 비선형 S-자 형의 전류-전압 특성, 광 방출 효율 및 흡수 효율을 측정, 분석하였다. 하부 거울층을 삽입한 DOT와 기존의 DOT의 스위칭 변화는 각각 1.82 V와 1.52 V로 흡수효율에서 20 % 증가함을 보인다. 뿐만 아니라, 하부 거울층을 이용한 DOT는 기존의 소자에 비하여 발광 효율 면에서 최고 46 % 향상된 결과를 나타낸다. 스위칭 특성을 분석하기 위하여 순방향 전압에서 비선형 s-자형의 전류-전압 특성을, 역방향 전압에서 완전 공핍 전압을 모의실험을 통하여 알아보았다. 모의실험 방법으로 유한 차분 방법 (finite difference method, FDM)을 이용하여 최적화된 DOT 각 층의 두께와 도핑 농도를 구하였다.

• 한국생활과학회지
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• 제16권2호
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• pp.407-419
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• 2007

The purpose of this study was to identify the effect of four clothing cues dot pattern size and ground field of color area ratio on dress's wearer image. The experimental materials developed for this study are a set of stimuli and response scales(The 7-point semantic). The stimuli were 30 color pictures manipulated with the combination of dot pattern size, dot pattern on background of color area ratio and neutral dress's using computer simulation. The subjects were 180 female undergraduates living students in Gyeong-nam. The result of this study are as follows: Image factor of the stimulus was composed of 5 different components (visibility, gracefulness, attractiveness, cuteness, womanly). Especially, Neutral color combination independently influenced the every components. In regarding the effect of interaction between each variable, the combination of dot pattern on background of color area ratio, dot pattern size on the combination had cuteness, womanly.

• 한국콘텐츠학회논문지
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• 제12권12호
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• pp.639-646
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• 2012

본 논문에서는 HP 컬러 레이저 프린터 기기의 출력물에 나타나는 Yellow Dots의 형태를 분석하고자, 각각 시간의 경과, 연과 월의 경과 그리고 동일한 기종에 따른 Yellow Dots의 특성을 실험하였다. 그 결과, 동일한 프린터기기의 출력물에서는 시간의 경과, 연과 월의 경과에서 나타나는 Yellow Dots의 형태가 동일한 것을 알 수 있었다. HP 컬러 레이저젯 프린터 기기에는 Xerox사에서 출시된 컬러 레이저젯 프린터기기와는 다르게 시간과 날짜 정보가 임베딩 되지 않았다는 것을 가정 할 수 있었다. 또한 시리얼 넘버가 다른 프린터기기에서는 유사하지만 다른 형태의 Yellow Dots가 나타나는 것을 알 수 있었으며, 이것은 프린터기기 구분에 있어 큰 도움이 된다. 마지막으로 실험에 사용된 모든 HP 컬러 레이저 프린터 기기들의 Yellow Dots를 분석한 결과, 동일한 패턴을 찾을 수 있었으며, 그 결과를 통하여 제조사를 파악 할 수 있었다. 향후 Yellow Dots 패턴을 해독하고 나아가 타 제조사의 Yellow Dots를 검출 및 분석하는 연구가 진행되어져야 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• 전자공학회논문지S
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• 제34S권5호
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• pp.73-85
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• 1997

In a drop-on-demand thermal ink-jet printer, the dot size of an ink droplet expelled from a printer depends on the absorption of the paper. This causes severe differences between output images on the different paper materials. In this paper, the color matching algorithm for different papers is proposed. To achieve corresponding color reproduction, dot gain compensatio nbased on saturation was applied to predict color reproduction on a printer. If the dot gain of pigment increases, the white portion of paper decreases while the saturation value increases monotonically. As the results of dot gain compensation, intensity change may appear. Therefore, an intensity compensation without any hue variation is followed to match the colors of different subtrates.

• 전자공학회논문지
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• 제51권8호
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• pp.167-171
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• 2014

평판 디스플레이(plate panel display)가 휴대용으로 발전하면서 박막화, 고색재현성, 고휘도에 관한 연구가 활발히 이루어지고 있으며, 광원으로써 LED, OLED가 주로 이용되고 있다. 이러한 광원의 소재로 양자점에 관한 연구가 많이 이루어 지고 있는데, 양자점은 고색재현성과 유연디스플레이 구현에 있어서 주목받는 차세대 반도체 나노형광체 이다. 본 연구에서는 평판 디스플레이를 구현함에 있어서 양자점을 이용하는 방법에 관하여 제시하였다. CdSe/ZnS 양자점을 PET베리어 필름에 $100{\mu}m$ 두께로 도포하고 455nm의 파장을 갖는 청색 LED를 광원으로하여 빛을 조사하는 디바이스를 제작하고 광특성을 평가하였으며, LCD의 색변환 필름으로써 양자점의 적용 가능성을 제시하였다.