• Journal of Powder Materials
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• v.19 no.6
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• pp.451-457
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• 2012

Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.

• Bulletin of the Korean Chemical Society
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• v.7 no.4
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• pp.257-262
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• 1986

Thixotropy is a time-dependent shear-thinning phenomenon. We derived a new thixotropic formula which is based on the generalized viscosity formula of Ree and Eyring, $f={\Sigma}\frac{X_i}{{\alpha}_i}sinh^{-1}$ () (Refer to the text concerning the notation.) The following is postulated: (1) thixotropy occurs when small flow units attached to a large flow unit separate from the latter under stress (2) elastic energy(${\omega}$) is stored on the large flow unit during the flow process, and (3) the stored energy contributes to decrease the activation energy for flow. A new thixotropic formula was derived by using these postulations, $f={\frac}{X_0{\beta}_0}{\alpha_0}{\dot{s}}+{\frac}{X_1{\beta}_1}{{\alpha}_1}{\dot{s}}+{\frac}{X_2}{{\alpha_x}}sinh^{-1}$[$({\beta}_0)_2$ exp $(-C_2{\dot{s}}^2/RT){\cdot}{\dot{s}}$] f is the shear stress, and s is the rate of shear. In case of concentrated solutions where the Newtonian flow units have little contribution to the viscosity of the system, the above equation becomes, $f=\frac{X_2}{\alpha_2}sinh^{-1}$[$({\beta}_0)_2$ exp $(-C_2{\dot{s}}^2/RT){\cdot}{\dot{s}}$]. In order to confirm these formulas, we applied to TiO2(anatase and rutile)-water, printing ink and mayonnaise systems. Good agreements between the experiment and theory were observed.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.39-46
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• 2005

We fabricate and analyze fully depleted optical thyristors (DOTs) using quarter wavelength reflector stacks (QWRS). QWRS are employed as bottom mirrors to enhance the emission efficiency as well as the optical sensitivity. In order to analyze their switching characteristics, S-shape nonlinear current-voltage curves are simulated and the reverse full-depletion voltages (Vneg's) of DOTs are obtained as function of semiconductor parameters by using a finite difference method (FDM). The fabricated DOTs show sufficient nonlinear s-shape I-V characteristics and switching voltage changes of these devices with and without bottom mirrors show 1.82 V and 1.52 V, respectively. Compared to a conventional DOT, this device with the bottom mirrors shows about 20％ and 46% enhancement in switching voltage change and spontaneous emission efficiency, respectively.

• Korean Journal of Human Ecology
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• v.16 no.2
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• pp.407-419
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• 2007

The purpose of this study was to identify the effect of four clothing cues dot pattern size and ground field of color area ratio on dress's wearer image. The experimental materials developed for this study are a set of stimuli and response scales(The 7-point semantic). The stimuli were 30 color pictures manipulated with the combination of dot pattern size, dot pattern on background of color area ratio and neutral dress's using computer simulation. The subjects were 180 female undergraduates living students in Gyeong-nam. The result of this study are as follows: Image factor of the stimulus was composed of 5 different components (visibility, gracefulness, attractiveness, cuteness, womanly). Especially, Neutral color combination independently influenced the every components. In regarding the effect of interaction between each variable, the combination of dot pattern on background of color area ratio, dot pattern size on the combination had cuteness, womanly.

• The Journal of the Korea Contents Association
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• v.12 no.12
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• pp.639-646
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• 2012

To analyzed the shape of Yellow Dots which appeared on the paper printed HP color laser printer, and analyzed the characteristic of Yellow Dots according to time, month, year and same printers. As a result, documents that printed in same printers had an identical Yellow Dots's shapes according to time, month, year. It was presupposed that was not embedded time and date information in HP Color LaserJet printers against Xerox, and printers which have different serial number had similar shapes but it was not identical Yellow Dots. Finally, it was found to be identical patterns in Yellow Dots of HP Color LaserJet printers used analysis. Depending on the results, it could understand HP's pattern. In the future, it will decipher patterns of Yellow Dots which have other informations to include other printer manufacturer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.5
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• pp.73-85
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• 1997

In a drop-on-demand thermal ink-jet printer, the dot size of an ink droplet expelled from a printer depends on the absorption of the paper. This causes severe differences between output images on the different paper materials. In this paper, the color matching algorithm for different papers is proposed. To achieve corresponding color reproduction, dot gain compensatio nbased on saturation was applied to predict color reproduction on a printer. If the dot gain of pigment increases, the white portion of paper decreases while the saturation value increases monotonically. As the results of dot gain compensation, intensity change may appear. Therefore, an intensity compensation without any hue variation is followed to match the colors of different subtrates.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.167-171
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• 2014

While the development of a portable plate panel display, thinning, high color reproduction, high brightness studies have been actively performed. LED, OLED is used as a light source. The research on quantum dot is much accomplished by the material of light source. Such quantum dot is the next generation semiconductor nano fluorescent substance because quantum dot has the high color reproduction and flexible display characteristic. In this study, we presented to method of using the quantum dot for implementation of the plate panel display. Quantum Dot (CdSe/ZnS), having a 100um thickness, is spread in PET barrier film. A Blue LED having a wavelength of 455nm as a light source irradiating light to the optical characteristic of the devices produced and evaluated. Also we presented the possibility for application with the color change film of the LCD.