• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.44-46
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• 2003

In 1996, Thailand's participation in the Pacific Rim as a part of NASA's Mission to Planet Earth (MTPE) Program, was titled 'AIRSAR Thailand Project'. In this project the Department of Land Development utilized Topographic SAR (TOPSAR) which had multi-frequencies: C band, L band, and P band with multi-polarization: HH, VV, and HV as well as C band VV DEM. Satellite data such as LANDSAT TM was also utilized for optimal use. Results of AIRSAR image processing including data fusion among difference wavelength bands and polarization revealed the quality of AIRSAR that best suit for detection of agricultural land uses. The HH-L band AIRSAR was proven to be useful to distinguish among crop types when combined with appropriate data. The HH, VV, and HV-P band enhanced surface characteristics of swamp forest and wetland. In addition, TOPSAR has its great advantage for identification of salt farms and shrimp ponds.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.89-94
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• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.1
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• pp.80-86
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• 2010

This paper describes the development result of S-band Transmitter of STSAT-3 by satellite research center(SaTReC), KAIST. STSAT-3 has two kinds of communication channels, S- band for Telemetry & Command and X-band for mission payload. S-band Transmiiter(STX) consist of modulator, frequency synthesizer, power amp and DC/DC converter. The modulation scheme of STX is FSK(Frequency Shift Keying). The interface between spacecraft OBC and STX is RS-422. The STX is based on modular design. The RF output power of STX is 1.5W(31.7dBm) and BER of STX is under 1E-5. The Test of STX is completed successfully such as functional Test and environmental(vibration, thermal vacuum) Test.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.170-173
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• 2010

Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

• Advances in nano research
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• v.9 no.2
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• pp.105-112
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• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.6
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• pp.609-614
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• 2009

The TT&C communication subsystem of STSAT-3 is consisted of communication link to send telemetry data of spacecraft to the ground station and receive command data from ground station. The S-band receiver is used to receive command data from ground station, Engineering Qualification Model of S-band receiver has been designed and manufactured. The Designed S-band Receiver uses a single conversion for a simple frequency conversion, including a DC-DC Converter and EMI Filter. Also, Digital demodulation part designed using FPGA and RS-422 data interface. The performance of S-band Receiver in functional and space environments test satisfies the requirements of STSAT-3.

• Journal of the Korean Professional Engineers Association
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• v.34 no.4
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• pp.36-40
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• 2001

Multimedia service via satellite Is supported voice, data, Image and video signals. The representation case model of satellite multimedia are satellite TV. satellite Internet. In the early 1990s, satellite communication and broad casting services successfully expanded form C/Ku band to Ka band. The benefits of operation at Ka-band are greater bandwidth available to accommodate the increased demand for high-speed Information exchange. By the early years of the 21s1 century, millions of households worldwide with dual Ku / Ka-band dishes Satellite multimedia systems receive hundreds of TV channels, originating from around the world, and delivering entertainment, information and education. Many Ku-band satellites have been ordered, but few Ka-band systems are moving into production. So Ka-band systems are characterized that low-cost access to low and high peed, two-way voice, data, and video communications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1255-1260
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• 2009

Microstrip interdigital filter is designed with the width and length of a resonator, the gap distance between resonators and the location of a tap. When designing filters, it is a benefit to design with few design parameters comparing to many design parameters. In this paper we design and implement two microstrip interdigital filters operating in the UWB(Ultra Wide-Band) frequency band, one using a fixed width of a resonator and the other using a different width of resonators. The test results of the implemented filters show that the low-band high filter with a fixed width has the insertion loss of 1.49dB, -10dB band width of 720MHz, -35.7dBattenuation at 4.8GHzand below -13dB of S11. The filter with a different width of resonators has the insertion loss of 1.6dB, -10dBbandwidth of 1.63GHz and below-8dBof S11.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.1265-1266
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• 2010