• Proceedings of the Korea Technology Innovation Society Conference
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• 2005.05a
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• pp.95-110
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• 2005

Science & Technology(S&T) is the most important thing to attain competitiveness in the 21st century, Our traditional S&T policies have been focused on hardware infra structure. we should consider software of S&T to enhance effectiveness. S&T should be had a correct understanding method of the creation for S&T culture. It implies that S&T policy in the 21st century should consider nonmaterial factors which include social, human, environmental and culture. Under this background, The purpose of this paper is to seek new S&T policy in the 21st century. Therefor this paper deals with how we can prepare for the future S&T policy and classify the change of S&T policy of Korea and analyze the characteristic of each phase. This paper argues that all actors (for example, S&T personnel, corporate using S&T, general public) should participate in the process of S&T innovation since the 21st century is the generation of the general public S&T. Also this paper presented the expanded S&T policy Right S&T policy could leads to diffuse right S&T culture. Diffusing S&T culture could accomplish expanded S&T policy which was considered phases of culture and welfare.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.508-516
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• 1992

In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.181-181
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• 2007

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.687-693
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• 1992

To improve dielectric, piezoelectric and temperature stability in 0.50Pb(SnS11/2TSbS11/2T)OS13T - 0.35PbTiOS13T - 0.60PbZrOS13T + 0.4[wt%]MnOS12T piezoelectric ceramics which is used for surface acoustic wave devices, CrS12TOS13T was added and the specimens were fabricated by Hot Press method, and their characteristics were measured with CrS12TOS13T addition. From the results, in the specimen added by 0.2[wt%]CrS12TOS13T, dielectric constant and mechanical quality factor were 380 and 2307, respectively, and it was suited for surface acoustic wave device and the temperature coefficient of the resonant frequency in the specimen added by 0.4[wt%]CrS12TOS13T was the least value of 74.96[ppm/$^{\circ}C$].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.1
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• pp.56-62
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• 1992

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.502-507
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• 1992

To improve temperature stability, 0.05Pb(SnS11/2TSbS11/2T)OS13T-0.35PbTiOS13T-0.60PbZrOS13T+0.4[wt%]MnO S12T piezoelectic ceramics were manufactured with the addition of CrS12TOS13T by Hot Press method. And the SAW delay line was fabricated and effects of CrS12TOS13T to the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 specimen added by 0.2[wt%] CrS12TOS13T whose propagation characteriatics of surface acoustic wave were the bast and its frequency characteristics was investigated. Electromechancal coupling factor(kS1sTS02T) was 3.11[%] and its temperature coefficient of the center frequency(CS1foT)was -21.27[ppm/$^{\circ}C$] in C4. The 31[MHz]]SAW IF filter of C4 scarcely had diffraction phenomena and therefore it was proper.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.