• 대한수학회논문집
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• 제26권1호
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• pp.135-149
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• 2011

Using (r, s)-preopen sets [14] and pre-${\omega}_t$-closures [6], a new kind of covering property $P^t_{({\omega}_r,s)}$-closedness is introduced in a bitopological space and several characterizations via filter bases, nets and grills [30] along with various properties of such concept are investigated. Two new types of cluster sets, namely pre-(${\omega}_r$, s)t-${\theta}_f$-cluster sets and (r, s)t-${\theta}_f$-precluster sets of functions and multifunctions between two bitopological spaces are introduced. Several properties of pre-(${\omega}_r$, s)t-${\theta}_f$-cluster sets are investigated and using the degeneracy of such cluster sets, some new characterizations of some separation axioms in topological spaces or in bitopological spaces are obtained. A sufficient condition for $P^t_{({\omega}_r,s)}$-closedness has also been established in terms of pre-(${\omega}_r$, s)t-${\theta}_f$-cluster sets.

• 충청수학회지
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• 제13권1호
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• pp.45-51
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• 2000

We will investigate some properties of integro-delay-differential equations, $$x^{\prime}(t)=A(t)x(t-g_1(t,x_t))+{\int}_{t_0}^{t}B(t,s)x(s-g_2(s,x_s))ds,\;t_0{\geq}0,\\x(t_0)={\phi}$$,

• 충청수학회지
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• 제29권1호
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• pp.1-11
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• 2016

This paper shows that the solutions to nonlinear perturbed functional differential system $$y^{\prime}=f(t,y)+{\int}^t_{t_0}g(s,y(s),Ty(s))ds+h(t,y(t))$$ have the asymptotic property by imposing conditions on the perturbed part ${\int}^t_{t_0}g(s,y(s),Ty(s))ds,h(t,y(t))$ and on the fundamental matrix of the unperturbed system y' = f(t, y).

• 대한전기학회논문지
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• 제41권2호
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• Asian Journal of Innovation and Policy
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• 제10권3호
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• pp.355-379
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• 2021

This study examined the evolution of S&T Basic Acts in Korea from the Science and Technology Promotion Act (1967) through the Special Act on STI (1997) to the Framework Act on Science and Technology (2001) in the following aspects: 1) comprehensive plans, 2) coordination mechanisms for S&T policies, 3) enforcement of R&D programs and performance diffusion, 4) promotion of human resources, 5) and S&T investment and budgeting. Before the Framework Act on S&T was enacted in 2001, critical issues were found in establishing S&T master plans, promotion of R&D programs, comprehensive coordination mechanisms, and R&D budgeting. The three Basic Acts have expanded the scope of regulation over time to cover the entire cycle of the S&T process. They concern a wide range of issues, including creating a basis for scientific and technological development, S&T promotion, disseminating and commercializing research outcomes, and preventing adverse effects from science and technology. The content of the Basic Acts has evolved in response to changes in the political, economic, and social environment of Korean industry during the past five decades.

• 대한전기학회논문지
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• 제41권1호
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• pp.56-62
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• 1992

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

• 충청수학회지
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• 제29권4호
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• pp.585-598
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• 2016

This paper shows that the solutions to the nonlinear perturbed differential system $$y^{\prime}=f(t,y)+{\int_{t_0}^{t}}g(s,y(s),T_1y(s))ds+h(t,y(t),T_2y(t))$$, have bounded properties. To show these properties, we impose conditions on the perturbed part ${\int_{t_0}^{t}}g(s,y(s),T_1y(s))ds,h(t,y(t),T_2y(t))$, and on the fundamental matrix of the unperturbed system y' = f(t, y) using the notion of h-stability.

• 충청수학회지
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• 제30권3호
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• pp.291-304
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• 2017

This paper shows that the solutions to the perturbed differential system $$y^{\prime}=f(t,y)+{{\displaystyle\smashmargin{2}{\int\nolimits_{t_0}}^{t}}g(s,y(s),T_1y(s))ds+h(t,y(t),T_2y(t))$$, have bounded properties by imposing conditions on the perturbed part ${\int}_{t_0}^{t}g(s,y(s),T_1y(s))ds,h(t,y(t),T_2y(t))$, and on the fundamental matrix of the unperturbed system y' = f(t, y) using the notion of h-stability.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제23권2호
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• pp.105-117
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• 2016

This paper shows that the solutions to the nonlinear perturbed differential system $y{\prime}=f(t,y)+\int_{t_0}^{t}g(s,y(s),T_1y(s))ds+h(t,y(t),T_2y(t))$, have the bounded property by imposing conditions on the perturbed part $\int_{t_0}^{t}g(s,y(s),T_1y(s))ds,h(t,y(t),T_2y(t))$, and on the fundamental matrix of the unperturbed system y′ = f(t, y) using the notion of h-stability.

• 대한전기학회논문지
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• 제41권8호
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• pp.858-868
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• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.