• Title/Summary/Keyword: RuO$_2$

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Properties of $RuO_2$ Thin Films for Bottom Electrode in Ferroelectric Memory by Using the RF Sputtering (RF Sputtering 법으로 제작한 강유전체 메모리의 하부전극용$RuO_2$ 박막의 특성에 관한 연구)

  • 강성준;정양희
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.5
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    • pp.1127-1134
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    • 2000
  • $RuO_2$ thin films are prepared by RP magnetron reactive sputtering and their characteristics of crystalliBation,microstructure, surface roughness and resistivity are studied with various O2/(Ar+O2)ratios and substrate temperatures. As O2/(Ar+O2) ratio decreases and substrate temperature increases, the preferred growing plane of$RuO_2$ thin films are changed from (110) to (101) plane. With increase of the 021(Ar+O2) ratio from 2075 to 50%, the surface roughness and the resistivity of $RuO_2$ thin films increase from 2.38nm to 7.81nm, and from $103.6 \mu\Omega-cm\; to \; 227 \mu\Omega-cm$, respectively, but the deposition rate decreases from 47nm/min to 17nm/min. On the other hand, as the substrate temperature increases from room temperature to$500^{\circ}C$, resistivity decreases from $210.5 \mu\Omega-cm\; to \; 93.7\mu\Omega-cm$. $RuO_2$ thin film deposited at $300^{\circ}C$ shows a excellent surface roughness of 2.38 m. As the annealing temperature increases in the range between $400^{\circ}C$ and $650^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of 02/(Ar+O2) ratio and $300^{\circ}C$ of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well qualified for bottom electrode for ferroelectric thin films.

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Studies on the Deactivation-resistant Ru Catalyst (Ru 촉매의 비활성화 억제를 위한 연구)

  • Kim, Young-Kil;Yie, Jae-Eui;Cho, Sung-June;Ryoo, Ryong
    • Applied Chemistry for Engineering
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    • v.5 no.5
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    • pp.808-818
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    • 1994
  • Effects of ceria additive on the activity and thermal aging behavior of supported Ru catalysts were investigated using Ru/${\gamma}$-$Al_2O_3$and Ru/$CeO_2$-${\gamma}$-$Al_2O_3$. The catalysts were characterized by $^{129}Xe$-NMR and $H_2$ chemisorption. The cataltic activity for conversion of CO, HC and $NO_x$ was measured using simulated automobile engine exhausts under lean, rich and stoichiometric conditions. For both fresh and aged catalysts, Ru/$CeO_2$-${\gamma}$-$Al_2O_3$ was more active than Ru/${\gamma}$-$Al_2O_3$ for all three pollutants. Results of $^{129}Xe$-NMR and $H_2$ chemisorption indicated that sintering of Ru particles occurred to the same extent for both catalysts during the thermal aging process. After thermal aging at 673K, however, the catalytic activity of the aged Ru/$CeO_2$-${\gamma}$-$Al_2O_3$ was substantially higher than that of the fresh one, while the activity of Ru/${\gamma}$-$Al_2O_3$ decreased after the thermal aging. This finding may suggest new active sites were created during the thermal aging, probably in the vicinity of the interface between Ru and Ce. For more quantitative investigation of the effect of a cation such as Ce on the thermal aging of Ru metal particles, Ru catalysts supported on cation-exchanged Y-zeolites were used as the model catalysts. The results indicated that when Ba, Ca, La, Y or Ce was used for the cation exchange, the exchanged cation did not affect the thermal aging behavior of Ru in Y-zeolite, as evidenced by $^{129}Xe$-NMR and EXAFS.

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Microstructures and Electrical Properties of $RuO_2$Bottom Electrode for Ferroelectric Thin Films

  • Shin, Woong-Chul;Yang, Cheol-Hoon;Jun-SiK Hwang;Yoon, Soon-Gil
    • The Korean Journal of Ceramics
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    • v.3 no.4
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    • pp.263-268
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    • 1997
  • RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

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Magnetic Properties of SrRuO3 Thin Films Having Different Crystal Symmetries

  • Kim, Jin-I;Jung, C.U.
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.57-60
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    • 2008
  • This study examined the effect of various types of epitaxial strain on the magnetic properties of $SrRuO_3$ thin films. Epitaxial $SrTiO_3$ (001), $SrTiO_3$ (110), and $SrTiO_3$ (111) substrates were used to apply different crystal symmetries to the grown films. The films were grown using pulsed laser deposition. The X-ray diffraction patterns of the films grown under optimum conditions showed very clear peaks for the $SrRuO_3$ film and $SrTiO_3$ substrates. The saturated magnetic moment at 5 K after 7 Tesla field cooling was $1.2-1.4\;{\mu}_B$/Ru. The magnetic easy axis for all three types of films was along the surface normal. The magnetic transition temperature for the $SrRuO_3$ film with lower symmetry was slightly larger than the $SrRuO_3$ film with higher symmetry.

Preparation of Highly Dispersed Ru/$\alpha-Al_2O_3$ Catalyst for Preferential CO Oxidation (선택적 CO 산화 반응을 위한 Ru/$\alpha-Al_2O_3$ 촉매 고분산 제조 방법에 관한 연구)

  • Eom, Hyun-Ji;Koo, Kee-Young;Jung, Un-Ho;Rhee, Young-Woo;Yoon, Wang-Lai
    • Transactions of the Korean hydrogen and new energy society
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    • v.21 no.5
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    • pp.390-397
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    • 2010
  • 0.5wt% Ru/$\alpha-Al_2O_3$ catalysts are prepared by deposition-precipitation method for the preferential CO oxidation In order to investigate the effect of pH on the Ru dispersion and particle size, the pH of precursor solution is adjusted to between 5.5 and 9.5. 0.5wt% Ru/$\alpha-Al_2O_3$ catalyst prepared at the pH of 6.5 has high Ru dispersion of 17.9% and small particle size of 7.7nm. In addition, 0.5wt% Ru/$\alpha-Al_2O_3$ catalyst prepared at the pH 6.5 is easily reduced at low temperatures below $150^{\circ}C$ due to high dispersion of $RuO_2$ particle and shows high CO conversion over 90% in the wide temperature range between $100^{\circ}C$ and $160^{\circ}C$. Moreover, the deposition-precipitation is a feasible method to improve the Ru dispersion as compared to the impregnation method. The 0.5wt% Ru/$\alpha-Al_2O_3$ catalyst prepared by deposition-precipitation exhibits higher CO conversion than 0.5wt% Ru/$\alpha-Al_2O_3$ catalysts prepared by impregnation due to higher metal dispersion and better reducibility at low temperature.

Synthesis of Ru Incorporated TiO2 and Application to Oxidation of Benzyl Alcohol with Molecular Oxygen (Ru를 도입한 TiO2의 합성과 산소를 이용한 알코올 산화반응 연구)

  • Kim, Youngyeong;Choi, Myong Yong;Kwon, Ki-Young
    • Applied Chemistry for Engineering
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    • v.25 no.6
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    • pp.645-647
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    • 2014
  • We synthesized $TiO_2$ ($Ru_x/TiO_2$) incorporating $TiO_2$ and Ru via an one-step hydrothermal method. The physical properties were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The prepared samples were applied as a catalyst for the oxidation of benzyl alcohol to benzaldehyde using molecular oxygen ($O_2$). Especially, the catalytic activities increased as the contents of ruthenium in $TiO_2$ increased without the formation of any byproducts.

Study on the Characteristics of Thermal-resistance Catalyst for $N_2O$ Propellant Decomposition ($N_2O$ 추진제 분해 촉매의 고온 내열 특성 연구)

  • Baek, Jin-Oh;Kim, Tae-Gu
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2010.05a
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    • pp.373-376
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    • 2010
  • The characteristics of thermal-resistance catalyst for $N_2O$ propellant decomposition were studied in the present study. Si was added to the $Al_2O_3$ support to stabilize its surface area at high temperature (> $1000^{\circ}C$). Ru was used as a catalyst for $N_2O$ decomposition. The prepared catalysts were characterized using SEM, EDS and XRD analysis, and $N_2O$ conversion was measured as reaction temperatures. The Ru/$Al_2O_3$-Si catalyst showed better performance than Ru/$Al_2O_3$ catalyst.

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Effects of Post-annealing and Temperature/Humidity Conditions on the Interfacial Adhesion Energies of ALD RuAlO Diffusion Barrier Layer for Cu Interconnects (후속열처리 및 고온고습 조건에 따른 Cu 배선 확산 방지층 적용을 위한 ALD RuAlO 박막의 계면접착에너지에 관한 연구)

  • Lee, Hyeonchul;Jeong, Minsu;Bae, Byung-Hyun;Cheon, Taehun;Kim, Soo-Hyun;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.2
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    • pp.49-55
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    • 2016
  • The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

Effect of Cation Substitution on the Lattice Vibration and Crystal Structure of Magnetic RuSr1.9A0.1GdCu2O8 (A = Ca, Sr, and Ba) Superconductors

  • Kim, Tae-Woo;Yang, In-Sang;Hwang, Seong-Ju
    • Bulletin of the Korean Chemical Society
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    • v.30 no.11
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    • pp.2559-2562
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    • 2009
  • The lattice vibration and crystal structure of alkaline earth metal-substituted $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$ (A = Ca, Sr, and Ba) have been investigated with micro-Raman spectroscopy. The present $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$ materials show not only several weak Raman peaks corresponding to the vibrations of $O_{Cu}$ and $O_{Ru}$ but also strong characteristic phonon lines related to $O_{Sr}$ vibration mode. A comparison between the frequency of $O_{Sr}$ vibration and the bond distances of (Ru$O_{Sr}$) and (Cu‒$O_{Sr}$) in the present ruthenocuprates reveals that the vibration energy of $O_{Sr}$ is mainly dependent on the bond distance of (Ru‒$O_{Sr}$). The peak splitting of the $O_{Sr}$ phonon lines was observed for the unsubstituted $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$, suggesting the existence of two different (Ru‒$O_{Sr}$) bond distances. Such a peak splitting caused by the appearance of low-energy shoulder reflects the presence of internal charge transfer pathway from the $RuO_2$ plane to the superconductive $CuO_2$ one. After the substitution of Sr with Ca or Ba, the low-energy shoulder peak of $O_{Sr}$ vibration becomes suppressed, underscoring the depression of internal charge transfer between the $RuO_2$ and $CuO_2$ planes. The weakened role of $RuO_2$ layer as charge reservoir in the $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$8 (A = Ca, Ba) would be responsible for the depression of $T_c$ upon the Ca/Ba substitution.

Template-Assisted Electrochemical Growth of Hydrous Ruthenium Oxide Nanotubes

  • Cho, Sanghyun;Liu, Lichun;Yoo, Sang-Hoon;Jang, Ho-Young;Park, Sungho
    • Bulletin of the Korean Chemical Society
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    • v.34 no.5
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    • pp.1462-1466
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    • 2013
  • We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.