• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• 한국재료학회지
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• 제11권9호
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• pp.769-775
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• 2001

High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.

• 한국재료학회지
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• 제26권3호
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• pp.130-135
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• 2016

To alloy high melting point elements such as boron, ruthenium, and iridium with copper, heat treatment was performed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ at the temperature of $1200^{\circ}C$ in vacuum for 30 minutes. The microstructure analysis of the alloyed sample was confirmed using an optical microscope and FE-SEM. Hardness and trace element analyses were performed using Vickers hardness and WD-XRF, respectively. Diffusion profile analysis was performed using D-SIMS. From the microstructure analysis results, crystal grains were found to have formed with sizes of 2.97 mm. For the copper alloys formed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ the sizes of the crystal grains were 1.24, 1.77, and 2.23 mm, respectively, while these sizes were smaller than pure copper. From the Vickers hardness results, the hardness of the Ir-copper alloy was found to have increased by a maximum of 2.2 times compared to pure copper. From the trace element analysis, the copper alloy was fabricated with the expected composition. From the diffusion profile analysis results, it can be seen that 0.059 wt%, 0.030 wt%, and 0.114 wt% of B, Ru, and Ir, respectively, were alloyed in the copper, and it led to change the hardness. Therefore, we verified that alloying of high melting point elements is possible at the low temperature of $1200^{\circ}C$.

• 센서학회지
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• 제6권4호
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• pp.274-279
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• 1997

$WO_{3}$ 모물질로 하여 NOx 검지센서를 제조하여 전기적 특성과 가스감지특성을 알아 보았다. $SnO_{2}$와 $TiO_{2}$를 포함한 $WO_{3}$ 후막은 동작온도 $400^{\circ}C$에서 순수한 $WO_{3}$ 후막보다 NOx가스에 대한 뛰어난 감도와 가스 흡탈착 특성을 보였다. $TiO_{2}-WO_{3}$ 후막에 Ru와 Au와 같은 귀금속 촉매를 특별히 첨가하여 제작된 센서에서는 NOx 가스에 대한 감도, 회복 속도 및 선택도 등을 더욱 개선되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.210-210
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• 2001

• 마이크로전자및패키징학회지
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• 제25권3호
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• pp.7-12
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• 2018

차세대 초미세 Cu 배선 적용을 위한 원자층증착법(atomic layer deposition, ALD)을 이용하여 증착된 Ru확산 방지층과 Cu 박막 사이의 계면 신뢰성을 평가하기 위해, Ru 공정온도 및 $200^{\circ}C$ 후속 열처리 시간에 따라 4점굽힘시험으로 정량적인 계면접착에너지를 평가하였고, 박리계면을 분석하였다. 225, 270, $310^{\circ}C$ 세 가지 ALD Ru 공정온도에 따른 계면접착에너지는 각각 8.55, 9.37, $8.96J/m^2$로 유사한 값을 보였는데, 이는 증착온도 변화에 따라 Ru 결정립 크기 등 미세조직 및 비저항의 차이가 적어서, 계면 특성도 거의 차이가 없는 것으로 판단된다. $225^{\circ}C$의 공정온도에서 증착된 Ru 박막의 계면접착에너지는 $200^{\circ}C$ 후속 열처리시 250시간까지는 $7.59J/m^2$ 이상으로 유지되었으나, 500시간 후에는 $1.40J/m^2$로 급격히 감소하였다. 박리계면에 대한 X-선 광전자 분광기 분석 결과, 500시간 후 Cu 계면 산화로 인하여 계면접착 에너지가 감소한 것으로 확인되었다. 따라서 ALD Ru 박막은 계면신뢰성이 양호한 차세대 Cu 배선용 확산방지층 후보가 된다고 판단된다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2009년도 춘계학술발표논문집
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• pp.894-897
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• 2009

$\gamma-Al_2O_3$, $TiO_2$, ZrO에 Pt, Pd, Rh, Ru의 귀금속촉매를 분산하였으며, 촉매 분산은 과잉용액함침법으로 제조하였다. 저온에서 높은 산화능을 지닌 최소화된 귀금속의 함침량을 도출하기 위하여 연구를 수행하였다. 귀금속 촉매의 조성에 대한 영향을 도출하기 위하여 Rh, Pt, Pd, Ru에 대하여 조성과 함침량에 대하여 연구를 수행하였다. 충전층 반응기 및 모노리스 반응기를 이용한 촉매산화반응 실험결과 50% 전환온도 및 90% 전환온도를 측정한 결과 최적의 조성은 Pt-Rh /$Al_2O_3$ 촉매로 판명되었다.

• 한국물환경학회지
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• 제23권5호
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• pp.613-619
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• 2007

This study has carried out a performance of dimensionally stable anode for the purpose of disinfection of Legionella pneumophila in water. Three kinds of electrode were prepared by plating and thermal deposition, which were coated by the oxides of Pt, Ru and Ir on Ti metal surface, respectively. The order of disinfection performance for Legionella pneumophila was Ru/Ti > Ir/Ti > Pt/Ti. Free Cl and $ClO_2$ generation of Ir/Ti electrode was higher than that of two electrodes. However, the concentrations of generated $H_2O_2$ and $O_3$ of the Ru/Ti electrode were highest among the three electrodes. The higher NaCl concentration was, the more oxidants was generated and disinfection effect was increased. However, optimum NaCl dosage was 0.0125% due to the regulation on the conductivity and $Cl^-$ concentration for the cooling water quality of air conditioning and refrigeration equipment. With the increase of current, oxidants was more generated and following disinfection effect was increased. The increase of electrode distance reduced oxidants generation due to the low electric power, and their disinfection effect was decreased accordingly.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.215-220
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• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.296-296
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• 2013

Supercapacitor is a capacitor with extraordinarily high energy density, which basically consists of current collector, active material and electrolyte. Ruthenium oxide ($RuO_2$) is one of the most widely studied active materials due to its high specific capacitance and good electrical conductivity. In general, it is known that the coating of $RuO_2$ on nanoarchitectured current collector shows improved performance of energy storage device compared to the coating on the planar current collector. Especially, the surface structure with standing coaxial nanopillars are most desirable since it can provide direct paths for efficient charge transport along the axial paths of each nanopillars and the inter-nanopillar spacing allows easy access of electrolyte ions. However, well-known fabrication methods for metal or metal oxide nanopillars, such as the process using anodize aluminum oxide (AAO) templates, often require long and complicated nanoprocess.In this work, we developed relatively simple method fabricating indium tin oxide (ITO) nanopillars via sputtering. We also electrodeposited $RuO_2$ nanoparticles onto these ITO nanopillars and investigated its physical and electrochemical properties.