• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.233-240
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• 1997

The Ru-based thick film resistor(TFR) for sintering at 90$0^{\circ}C$ was synthesized to prepare the LCR net-work. These compositions of pyrochlore could be prepared by decreasing the amount of PbO and increasing alumina and silica contents of glass frit. In this study, the sheet resistances of the TFTs. which sint-ered at 90$0^{\circ}C$ after printing on alumina substrate, the sheet resistances of the TFRs on inductor and capa-citor substrate and the interphase between TFR and substrate were observed. And the changes of the sheet resistance were obtained with the contents of RuO2. In case of the TFR sintered at 90$0^{\circ}C$, the sheet resis-tances on alumina substrates were in the range of 103~106$\Omega$/$\square$, but the sheet resistances of TFR on in-ductor and capacitor substrate were not obtained.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.634-638
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• 2001

본 연구에서는 마이크로 내시경용 바이오 센서로 응용하기 위한 Al/PZT/RuO$_2$로 이루어진 마이크로 캔틸레버를 제작하였으며, 공진 특성 및 병원체의 흡착에 따른 공진 특성 그리고 검출 감도(sensitivity)에 미치는 구조적인 영향을 전산모사를 통하여 알아보았다. 길이 100$mu extrm{m}$, 폭 50$\mu\textrm{m}$, 두께 0.3$\mu\textrm{m}$/0.25$\mu\textrm{m}$/0.7$\mu\textrm{m}$ (Al/PZT/RuO$_2$)의 크기의 제작된 마이크로 캔틸레버는 89kHz의 공진주파수를 가지고 있음을 전산모사를 통해 알 수 있었다. 바이오 센서로 응용될 때의 검출 감도는 흡착 질량의 증가에 비례하여 향상되었으며, 5% 이상의 검출 감도를 갖기 위해서는 흡착 질량이 약 5 나노그램 이상이 되어야 함을 확인할 수 있었다. 캔틸레버의 크기를 결정하는 길이, 폭, 두께중 사용 주파수 대역은 길이의 조절을 통하여 결정할 수 있고, 검출 감도의 향상을 위해서는 가능한 한 두께를 얇게 해야 함을 알 수 있었다. 반면에 폭의 변화는 공진주파수나 검출 감도에 거의 영향을 미치지 않았다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.57-60
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• 1998

Lean zirconate titanate (PZT) is an attractive material for the memory device applications. We have investigated Pt and{{{{ { RuO}_{2 } }}}} as a botton electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. The substrate temperature influenced the resistivity of Pt and {{{{ { RuO}_{2 } }}}} a s well as the film crystal structure. XRD examination shows that a preferred(111) orientations for the substrate temperature of 30$0^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of 30$0^{\circ}C$ for the bottom electrode growth. We investigated and anneal temperature effect because Perovskite PZT structure is recommended for the memory device applications and the structural transformation is occurred only after and elevated heat treatment. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Rt and {{{{ { RuO}_{2 } }}}} w as decreased. Surface morphology was observed by AFM as a function of post anneal temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.217-217
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• 2003

초전도체 선재를 제작하기위해 YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) 와 Ni substrates사이의 계면 문제를 해결하기 위한 buffer layer로써 CaRuO$_3$ (CRO) thu film이 제안되었는데, 이런 buffer layer의 조건으로는Ni metal과 YBCO superconductor사이의 화학적 반응이 없어야 하고 metal component가 YBCO로 diffusion되는 것을 막아주어야 하며 substrates의 산화를 막아주어야 한다. 이런 조건을 만족시키는 것 중에서 CRO thin film이 가장 적절하였지만, CRO의 orthorhombic구조의 distortion에 의만 lattice mismatch 문제가 발생하였다. 이러한 문제를 해결하기 위해 이론적인 구조 분석을 통한 CRO의superconductor buffer layer로써의 가능성을 검토해 보는 것이 목적이다.

• Journal of Environmental Science International
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• v.17 no.9
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• pp.1023-1032
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• 2008

The feasibility study of the application of the photoelectrocatalytic and electrolytic/UV decolorization of Rhodamine B (RhB) was investigated in the photoelectrocatalytic and electrolytic/UV process with $TiO_2$ photoelectrode and DSA (dimensionally stable anode) electrode. Three types of $TiO_2$ photoelectrode were used. Thermal oxidation electrode (Th-$TiO_2$) was made by oxidation of titanium metal sheet; sol-gel electrode (5G-$TiO_2$) and powder electrode (P-$TiO_2$) were made by coating and then heating a layer of titania sol-gel and slurry $TiO_2$ on titanium sheet. DSA electrodes were Ti and Ru/Ti electrode. The relative performance for RhB decolorization of each of the photoelecoodes and DSA electrodes is: Ru/Ti > Ti > SG-$TiO_2$ > Th-$TiO_2$. It was observed that photoelectrocatalytic decolorization of RhB is similar to the sum of the photocatalytic and electrolytic decolorization. Therefore the synergetic effect was not showed in pthotoelectrocatalytic reaction. $Na_{2}SO_{4}$ and NaCl showed different decolorization effect between pthotoelectrocatalytic and electrolytic/UV reaction. In the presence of the NaCl, RhB decolorization of Ru/Ti DSA electrode was higher than that of the other photoelectrode and Ti electrode. Optimum current, NaCl dosage and UV lamp power of the electrolytic/UV process (using Ru/Ti electrode) were 0.75 A, 0.5 g/L and 16 W, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.117-117
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• 2008

In MIM capacitor, poly-Si bottom electrode is replaced with metal bottom electrode. Noble metals can be used as bottom electrodes of capacitors because they have high work function and remain conductive in highly oxidizing conditions. In addition, they are chemically very stable. Among novel metals, Ru (ruthenium) has been suggested as an alternative bottom electrode due to its excellent electrical performance, including a low leakage of current and compatibility to high dielectric constant materials. Chemical mechanical planarization (CMP) process has been suggested to planarize and isolate the bottom electrode. Even though there is a great need for development of Ru CMP slurry, few studies have been carried out due to noble properties of Ru against chemicals. In the organic chemistry literature, periodate ion ($IO_4^-$) is a well-known oxidant. It has been reported that sodium periodate ($NaIO_4$) can form $RuO_4$ from hydrated ruthenic oxide ($RuO_2{\cdot}nH_2O$). $NaIO_4$ exist as various species in an aqueous solution as a function of pH. Also, the removal mechanism of Ru depends on solution of pH. In this research, the static etch rate, passivation film thickness and wettability were measured as a function of slurry pH. The electrochemical analysis was investigated as a function of pH. To evaluate the effect of pH on polishing behavior, removal rate was investigated as a function of pH by using patterned and unpatterned wafers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• Journal of the Korean Chemical Society
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• v.49 no.1
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• pp.78-82
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• 2005

• Applied Chemistry for Engineering
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• v.20 no.3
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• pp.296-300
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• 2009

Generation of chlorine dioxide ($ClO_2$) was studied by the un-divided electrochemical cell system using $RuO_2$ anode material. Sodium chlorite ($NaClO_2$) was used as a precursor compound of chlorine dioxide. Effect of various operating parameters such as feed solution flow rate, initial solution pH, $NaClO_2$ and NaCl conc., and applied current density on the produced chlorine dioxide concentration and solution pH were investigated in un-divided electrochemical cell system. Produced chlorine dioxide concentration and solution pH were strongly depends on the initial solution pH and feed solution flow rate. Sodium chloride (NaCl) was not only good electrolyte, it was also used as a raw material of chlorine dioxide with $NaClO_2$. Observed optimum conditions were flow rate of feed solution (90 mL/min), initial pH (2.3), $NaClO_2$ concentration (4.7 mM), NaCl concentration (100 mM), and current density ($5A/dm^2$). Produced chlorine dioxide concentration was around 350 mg/L and solution pH was around 3.