• Title/Summary/Keyword: RuO$_2$

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Interaction between RuO2 and Carbon Nanotubes - Photoemission and X-ray Absorption Study

  • Lee, Seung-Youb;Kim, Yoo-Seok;Jeon, Chel-Ho;Ihm, Kyu-Wook;Kang, Tai-Hee;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.567-567
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    • 2012
  • Since the carbon nanotubes (CNTs) have extraordinary material properties, many researchers are trying to make a practical application in various fields [1]. In particular, the high surface area of CNTs was fascinated for nano-template on the catalytic system. $RuO_2$ coated CNTs are useful functional nano-composites in many applications, including super capacitors, fuel cells, biosensors, and field emitters. However, the research of interaction between CNTs and $RuO_2$ was not satisfied with various fields [2]. In this study, we will introduce the change of chemical and electrical state of $RuO_2$/CNTs at different temperatures by synchrotron radiation photoemission spectroscopy (SRPES). The t-MWCNTs used in this experiment were grown on the Ni/TiN/Si substrates by chemical vapor deposition. $RuO_2$ of 4-20 nm in thickness was deposited on the t-MWNTs by sputter. The SRPES measurements were carried out at the 4B1 beamline of the Pohang Accelerator Laboratory in Korea. The result of XPS measurement indicates that the deposited $RuO_2$ on the CNTs was reduced into pure Ru at above $300^{\circ}C$. And we confirmed that the effective work function of $RuO_2$/CNTs was decreased with increasing temperature.

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Effect of lead-free frit and RuO2 on the electrical properties of thick film NTC thermistors for low temperature co-firing (저온 동시 소성용 후막 NTC 서미스터의 전기적 특성에 미치는 무연계 프릿트 및 RuO2의 영향)

  • Koo, Bon Keup
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.5
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    • pp.218-227
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    • 2021
  • A thick film NTC thermistor for low temperature co-firing was manufactured by printing and sintering a paste prepared using NTC powder of Mn1.5Ni0.4Co0.9Cu0.4O4 composition, lead free frit, and RuO2 on a 96 % alumina substrate. The effect of frit and RuO2 on the electrical properties of thick film NTC thermistor was studied. The resistance of the thick film NTC thermistor was higher than that of the bulk phase sintered at the same temperature, but it was found that the negative resistance temperature characteristic appeared more clearly and linearly in the resistance - temperature characteristic. On the other hand, the area resistance decreased as the sintering temperature increased, and the area resistance increased as the amount of frit added increased. The B constant of the thick film NTC thermistor was 3000 K or higher. Among them, it was found that the B constant of the thick film NTC thermistor made of paste with 5 wt% of frit added and sintered at 900℃ showed the highest B constant. Also, it can be seen that the area resistance decreased with the addition of RuO2, and the change in the area resistance decrease of the thick film NTC thermistor obtained by sintering the paste containing 5 wt% of RuO2 at 900℃ is the most obvious.

$RuO_2$ Related Schottky contact for GaN/AlGaN device

  • Jung, Byung-Kwon;Kim, Jung-Kyu;Lee, Jung-Hee;Hahm, Sung-Ho
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.85-90
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    • 2002
  • $RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

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Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 System Glass for AlN Substrate (Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 계 유리가 적용된 질화알루미늄 기판용 RuO2계 친환경 후막저항의 전기적 특성 연구)

  • Kim, Min-Sik;Kim, Hyeong-Jun;Kim, Hyung-Tae;Kim, Dong-Jin;Kim, Young-Do;Ryu, Sung-Soo
    • Journal of the Korean Ceramic Society
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    • v.47 no.5
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    • pp.467-473
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    • 2010
  • The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

Study on the Characteristics of Nitrous Oxide Catalytic Decomposition (아산화질소 촉매 분해 특성 연구)

  • Yong, Sung-Ju;Park, Dae-Il;Kim, Tae-Gyu
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2009.11a
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    • pp.58-61
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    • 2009
  • The characteristics of nitrous oxide catalytic decomposition were studied to utilize the nitrous oxide as a propellant. The Ru and Pt were selected as nitrous oxide decomposition catalysts and loaded in the $Al_2O_3$ support using an impregnation method. The nitrous oxide conversions as a variation of GHSV and reaction temperature were measured in a tubular reactor. At the low GHSV and high temperature, the conversion was increased, and Ru/$Al_2O_3$ catalyst showed better performance than Pt/$Al_2O_3$ catalyst.

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The TiO2 based electrode consisting binary catalysts which is prepared by anodization for water oxidation application (양극산화법을 통해 제조한 IrO2-RuO2 촉매를 포함하는 고성능 수전해 산소발생용 TiO2 나노튜브 전극)

  • Yu, Hyeon-Seok;O, Gi-Seok;Lee, Gi-Baek;Choe, Jin-Seop
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.191.2-191.2
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    • 2016
  • $TiO_2$는 우수한 화학적 및 물리적 안정성 때문에 수전해 장기간 사용에 적합한 전기화학 전극으로 여겨진다. 큰 표면적을 갖는 $TiO_2$를 제조하기 위한 수많은 방법 중 양극산화(anodization)는 비교적 간단하고 저렴한 공정으로 인하여 매우 실용적인 방법으로서 알려져 있다. 특히, 고도로 정렬 된 $TiO_2$ 나노튜브($TiO_2$ NTs) 의 경우에는 분말상과 달리 전극제조를 위해 추가적인 접착제를 필요하지 않다. 그러나, $TiO_2$는 일반적으로 절연 특성을 나타내기 때문에 전극의 활용을 위해서는 본질적으로 촉매의 사용이 불가피하다. 다수의 전기 촉매 중, $IrO_2$$RuO_2$는 수전해 분야에 잘 알려진 산화 촉매이다. 그럼에도 불구하고, 특유의 높은 종횡비 때문에 $TiO_2$ 나노튜브에 전기 촉매를 균일하게 도핑하는 것은 많은 어려움이 따른다. 이를 해결하기 위한 방법으로 $RuO_2$를 도핑하기 위한 단일공정 $TiO_2$ 양극산화 기술이 보고된 바 있다. 본 연구에서는 2원 촉매($IrO_2$$RuO_2$)를 $TiO_2$ 나노튜브에 도핑하기 위한 단일공정 양극산화 기술에 대하여 연구하였다. 전구물질로써 $KRuO_4$($RuO_2$ 전구체)와 IrOx 나노입자(IrOx NPs, $IrO_2$ 전구체)를 사용하였다. 특히, IrOx를 나노 입자는 $IrCl_3$로부터 중간 매체로 합성된다. IrOx는 단일공정 양극산화 중에 $TiO_2$ 나노튜브 상에 도핑 가능한 이온 형태인 $IrO_4$-로 전환될 수 있다. 제조된 시료는 열처리 후 바로 전극으로 사용되었으며 SEM, XPS, TEM, ICP-OES 등으로 정성, 정량 분석을 수행하였다. LSV와 EIS를 통해 전기화학적 성능 평가가 이루어졌으며, LSV를 통해 포집한 기체는 가스 크로마토그래피를 사용하여 정량분석한 후 그 효율을 측정하였다.

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Promotion effect of Ru in Ni-based catalyst for combined $H_{2}O$ and $CO_{2}$ reforming of methane (메탄의 수증기/이산화탄소 복합 개질 반응용 니켈 촉매의 루테늄 증진 효과)

  • Jang, Won-Jin;Seo, Yu-Taek;Roh, Hyun-Seog;Koo, Kee-Young;Seo, Dong-Joo;Seo, Yong-Seog;Rhee, Young-Woo;Yoon, Wang-Lai
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.53-56
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    • 2007
  • 미량의 Ru을 증진제로 첨가하여 니켈 촉매의 반응 활성을 증진시킴으로써, 저온 환원성과 장시간 반응에 대한 안정성을 확보하고자 하였다. Ni의 담지량은 12 wt%로 고정하였으며 이에 Ru을 각각 0.1, 0.3, 0.5 wt%로 변화시켜 2차 담지하였다. 메탄의 수증기/이산화탄소 복합 개질 반응에 있어 니켈 촉매에 Ru을 2차 담지 한 촉매는 800 $^{\circ}C$, GHSV(gas hourly space velocity) 265,000 $h^{-1}$ 하에서 100 %에 가까운 $CH_{4}$ 전환율을 보였으며, GHSV 1,060,000 $h^{-1}$ 일 때에도 10시간 동안 90 %의 $CH_{4}$ 전환율을 기록하였다. 또한 이 중 0.3 wt%의 Ru를 담지한 경우가 1,060,000 $h^{-1}$의 조건하에서도 95 %이상으로 가장 높은 $CH_{4}$ 전환율로 유지되었다. $H_{2}-TPR$ 분석 결과, Ni(12)/$MgAl_{2}O_{4}$ 와 비교해 볼 때 Ru(0.5)/Ni(12)/$MgAl_{2}O_{4}$와 Ru(0.3)/Ni(12)/$MgAl_{2}O_{4}$ 촉매의 경우 150 $^{\circ}C$에서 저온 환원이 가능한 $RuO_{2}$의 존재를 확인할 수 있었다.

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Steam Reforming of Tar Produced from Biomass Gasification Using Ni/Ru-X/Al2O3 (X=K or Mn) Catalyst (Ni/Ru-X/Al2O3 (X=K or Mn) 촉매를 이용한 바이오매스 가스화 타르의 수증기개질)

  • Oh, Gunung;Park, Seo Yoon;Lee, Jae-Goo;Kim, Yong Ku;Ra, Ho Won;Seo, Myung Won;Yoon, Sang Jun
    • Clean Technology
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    • v.22 no.1
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    • pp.53-61
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    • 2016
  • Steam reforming of tar produced from biomass gasification was conducted using several Ni-based catalysts. In labscale, the catalytic steam reforming of toluene which is a major component of biomass tar was studied. A fixed bed reactor was used at various temperatures of 400-800 ℃. Ru (0.6 wt%) and Mn or K (1 wt%) were applied as a promoter in Ni based catalysts. Generally, Ni/Ru-K/Al2O3 catalyst shows higher performance on steam reforming of toluene than Ni/Ru-Mn/Al2O3 catalyst. Used catalysts were analyzed by XRD and TGA to detect sintering and carbon deposition. Base on the lab-scale studies, the monolith and pellet type catalysts were tested in 1 ton/day scale biomass gasification system. Ni/Ru-K/Al2O3 monolith catalyst shows high tar reforming performance at high temperature. In addition, Ni/Ru-Mn/Al2O3 monolith catalyst was showed deactivation with operation time. Reforming performance of Ni/Ru-K/Al2O3 pellet catalyst which showed 66.7% tar conversion at 587 ℃ was compared to regenerated one. Overall, Ni/Ru-K/Al2O3 pellet catalyst shows higher stability and performance than other used catalysts.

Structural and Electrical Properties of SrRuO3 thin Film Grown on SrTiO3 (110) Substrate

  • Kwon, O-Ung;Kwon, Namic;Lee, B.W.;Jung, C.U.
    • Journal of Magnetics
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    • v.18 no.1
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    • pp.39-42
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    • 2013
  • We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

Fabrication of Ti/Ir-Ru electrode by spin coating method for electrochemical removal of copper

  • Kim, Joohyun;Bae, Sungjun
    • Environmental Engineering Research
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    • v.24 no.4
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    • pp.646-653
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    • 2019
  • Recovery of valuable metals in the industrial wastewater and sludge has attracted an attention owing to limited metallic resources in the earth. In this study, we firstly fabricated Ti/Ir-Ru electrodes by spin coating technique for effective recovery of Cu in electrowinning process. Two different Ti/Ir-Ru electrodes were fabricated using 100 and 500 mM of precursors (i.e., Ir-Ru). SEM-EDX and AFM revealed that Ir and Ru were homogenously distributed on the surface of Ti plate by the spin coating, in particular the electrode prepared by 500 mM showed distinct boundary line between Ir-Ru layer and Ti substrate. XRD, XPS, and cyclic voltammetry also revealed that characteristics of IrO2, RuO2, and TiO2 and its electrocatalytic property increased as the concentration of coating precursor increased. Finally, we carried out Cu recovery experiments using two Ti/Ir-Ru as anodes in electrowinning process, showing that both anodes showed a complete removal of Cu (1 and 10 g/L) within 6 h reaction, but much higher kinetic rate constant was obtained by the anode prepared by 500 mM. The findings in this study can provide a fundamental knowledge for surface characteristics of Ti/Ir-Ru electrode prepared by spin coating method and its potential feasibility for effective electrowinning process.