• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.228.1-228.1
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• 2010

선택적 CO 산화반응(PrOx)을 위한 Ru이 고분산 담지된 $Ru/{\alpha}-Al_2O_3$ 촉매를 증착-침전법(deposition-precipitation)으로 제조하였다. 용액의 pH와 aging 시간에 따른 Ru 입자의 크기 변화와 분산도의 영향을 살펴보았으며 함침법(impregnation)으로 비교 촉매를 제조하였다. 촉매의 특성분석은 BET, TPR, CO-Chemisorption분석을 수행하여 촉매의 비표면적, 환원특성, 분산도를 알 수 있었다. 특성분석결과, 증착-침전법으로 제조한 $Ru/{\alpha}-Al_2O_3$ 촉매가 함침법으로 제조한 촉매에 비해 분산도가 높았으며, pH별 촉매 제조에서는 pH6.5로 제조한 촉매가 22.06%로 가장 높은 분산도를 보였다. 또한, 담체의 비표면적 영향에 따른 Ru 입자의 분산도를 살펴보기 위해 ${\gamma}-Al_2O_3$와 ${\alpha}-Al_2O_3$ 담체를 적용한 결과, 비표면적이 작은 ${\alpha}-Al_2O_3$ 담체 표면에서 Ru 분산도가 ${\gamma}-Al_2O_3$ 담체에 비해 높았다. 이는 기공이 발달하여 비표면적이 넓은 ${\gamma}-Al_2O_3$ 담체는 소량의 Ru을 고분산 담지 시 담체 표면보다는 기공 내에 담지 되는 양이 많아 실제 반응 시 반응에 참여하는 표면 활성 금속양이 적음을 알 수 있다. 특히, 선택적 산화반응과 같이 표면에서 빠른 반응이 일어나는 경우, 기공 내부의 활성금속이 반응에 참여하기 어려워 반응 활성이 낮음을 PrOx 반응실험을 통해 확인할 수 있었다. PrOx test 조건은 GHSV 250000~60000, 온도는 80~200도, 람다값은 2~4로 성능 비교하여 실험 하였다. PrOx의 성능평가 결과 담체를 ${\alpha}-Al_2O_3$를 사용하여 deposition-precipitation방법으로 제조한 pH6.5 촉매에서 $100{\sim}160^{\circ}C$에서 90%의 가장 높은 CO conversion을 가지고 18%의 선택도를 가졌다.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.349-356
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• 2006

We have investigated adsorption and desorption properties of CO adsorption on silica supported Ru/Ni alloys at various Ru/Ni mole content ratio as well as CO partial pressures using Fourier transform infrared spectrometer (FT-IR). For Ru-$SiO_{2}$ sample, four bands were observed at $2080.0cm^{-1}$, $2021.0{\sim}2030.7cm^{-1}$, $1778.9{\sim}1799.3cm^{-1}$, $1623.8cm^{-1}$ on adsorption and three bands were observed at $2138.7cm^{-1}$, $2069.3cm^{-1}$, $1988.3{\sim}2030.7cm^{-1}$ on vacumn desorption. For Ni-$SiO_{2}$ sample, four bands were observed at $2057.7cm^{-1}$, $2019.1{\sim}2040.3cm^{-1}$, $1862.9{\sim}1868.7cm^{-1}$, $1625.7cm^{-1}$ on adsorption and two bands were observed at $2009.5{\sim}2040.3cm^{-1}$, $1828.4{\sim}1868.7cm^{-1}$ on vacumn desorption. These absorption bands correspond with those of the previous reports approximately. For Ru/Ni(9/1, 8/2, 7/3, 6/4, 5/5; mole content ratio)-$SiO_{2}$ samples, three bands were observed at $2001.8{\sim}2057.7cm^{-1}$, $1812.8{\sim}1926.5cm^{-1}$, $1623.8{\sim}1625.7cm^{-1}$ on adsorption and three bands were observed at $2140.6cm^{-1}$, $2073.1cm^{-1}$, $1969.0{\sim}2057.7cm^{-1}$ on vacumn desorption. The spectrum pattern observed for Ru/Ni-$SiO_{2}$ sample at 9/1 Ru/Ni mole content ratio on CO adsorption and on vacumn desorption is almost like the spectrum pattern observed for Ru-$SiO_{2}$ sample. But the spectrum patterns observed for Ru/Ni-$SiO_{2}$ samples under 8/2 Ru/Ni mole content ratio on CO adsorption and vacumn desorption are almost like the pattern observed for $Ni-SiO_{2}$ sample. It may be suggested surfaces of alloy clusters on the Ru/Ni-$SiO_{2}$ samples contain more Ni components than the mole content ratio of the sample considering the above phenomena. With Ru/Ni-$SiO_{2}$ samples the absorption band shifts may be ascribed to variations of surface concentration, strain variation due to atomic size difference, variation of bonding energy and electronic densities, and changes of surface geometries according to surface concentration variation. Studies for CO adsorption on Ru/Ni alloy cluster surface by LEED and Auger spectroscopy, interation between Ru/Ni alloy cluster and $SiO_{2}$, and MO calculation for the system would be needed to look into the phenomena.

• Nuclear Engineering and Technology
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• v.16 no.2
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• pp.58-63
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• 1984

Paper electrophoretic separation of octahedrally bonded (Ruc $l_{6}$ )$^{3-}$ has been carried out by using the specially designed migration apparatus. The supporting electrolyte solutions are as follows: 0.1M-HCl $O_4$, 0.05 M-HCl+0.09M-KCl, 0.1M-HCl, 5$\times$10$^{-3}$ M-NTA, 0.01M-HCl, 0.01M-HCl $O_4$, 0.01M-citric acid, 0.01M-K $H_2$P $O_4$+0.01M-N $a_2$HP $O_4$, 0.05M-borax, 0.025M-N $a_2$C $O_3$+0.025M-NaHC $O_3$, 0.01M-N $a_3$P $O_4$, 0.01M-NaOH and 0.1 M-NaOH. The (Ruc $l_{6}$ )$^{3-}$ appears in 2 to 4 peaks and is found in several chemical species such as (RuCl ($H_2O$)$_{5}$ )$^{2+}$, cis and trans (RuC $l_2$($H_2O$)$_4$)$^{1+}$, (RuC $l_3$($H_2O$)$_3$)$^{0}$ , (RuC $l_4$($H_2O$)$_2$)$^{1-}$, (RuC $l_{5}$ ($H_2O$))$^{2-}$ and (RuC $l_{6}$ )$^{3-}$. The retention value has been found to be highest in the 0.025M-N $a_2$C $O_3$+0.025M-NaHC $O_3$ electrolyte solution.n.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2559-2562
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• 2009

The lattice vibration and crystal structure of alkaline earth metal-substituted $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$ (A = Ca, Sr, and Ba) have been investigated with micro-Raman spectroscopy. The present $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$ materials show not only several weak Raman peaks corresponding to the vibrations of $O_{Cu}$ and $O_{Ru}$ but also strong characteristic phonon lines related to $O_{Sr}$ vibration mode. A comparison between the frequency of $O_{Sr}$ vibration and the bond distances of (Ru$O_{Sr}$) and (Cu‒$O_{Sr}$) in the present ruthenocuprates reveals that the vibration energy of $O_{Sr}$ is mainly dependent on the bond distance of (Ru‒$O_{Sr}$). The peak splitting of the $O_{Sr}$ phonon lines was observed for the unsubstituted $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$, suggesting the existence of two different (Ru‒$O_{Sr}$) bond distances. Such a peak splitting caused by the appearance of low-energy shoulder reflects the presence of internal charge transfer pathway from the $RuO_2$ plane to the superconductive $CuO_2$ one. After the substitution of Sr with Ca or Ba, the low-energy shoulder peak of $O_{Sr}$ vibration becomes suppressed, underscoring the depression of internal charge transfer between the $RuO_2$ and $CuO_2$ planes. The weakened role of $RuO_2$ layer as charge reservoir in the $RuSr_{1.9}A_{0.1}GdCu_{2}O_{8}$8 (A = Ca, Ba) would be responsible for the depression of $T_c$ upon the Ca/Ba substitution.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.152-152
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• 1999

1Gb급 이상 기억소자의 캐패시터 재료로 주목받고 있는 (Ba,Sr)TiO3 [BST] 박막의 전극재료로는 Pt, Ru, Ir과 같은 금속전극과 RuO2, IrO2와 산화물 전도체가 유망한 것으로 알려져 있다. 그런데, DRAM의 집적도가 증가하게 되면, BST같은 고유전율 박막을 유전재료로 사용한다 하더라도, 3차원적인 구조가 불가피하게 때문에 기존의 sputtering 방법으로는 우수한 단차피복성을 얻기 힘들므로, MOCVD법이 필수적이다. 본 연구에서는 기존에 연구되었던 Pt에 비해 식각특성이 우수하고, 비교적 낮은 비저항을 갖는 Ru 박막증착에 대한 연구를 행하였다. 본 연구에서는 수직형의 반응기와 저항 가열 방식의 susceptor로 구성된 저압 유기금속 화학증착기를 사용하여 최대 6inch 직경을 갖는 기판 위에 Ru박막을 증착하였다. Precursor로는 기존에 연구된 적이 없는 bis-(ethyo-$\pi$-cyclopentadienyl)Ru (Ru(C5H4C2H5)2, [Ru(EtCp)2])를 사용하였으며, bubbler의 온도는 85$^{\circ}C$로 하였다. Si, SiO2/Si를 사용하였으며, 증착온도 25$0^{\circ}C$~40$0^{\circ}C$, 증착압력 3Torr의 조건에서 Ru 박막을 증착하였다. Presursor를 운반하는 수송기체로는 Ar을 사용하였으며, carbon과 같은 불순물의 제거를 위해 O2를 첨가하였다. 증착된 박막은 XRD, SEM, 4-point probe등을 통해 구조적, 전기적 특성을 평가하였으며, 열역학 계산을 위해서는 SOLGASMIX-PV프로그램을 사용하였다. Ru 박막의 증착에 있어서 산소의 첨가는 필수적이었으며, Ru 박막의 증착속도는 30$0^{\circ}C$~40$0^{\circ}C$의 온도 영역에서 200$\AA$/min으로 일정하였으며, 첨가된 산소의 양이 적을수록 더 치밀하고 평탄한 표면형상을 보였으며, 또한 더 낮은 전기 전도도를 보였다. 그리고 증착된 박막은 12~15$\mu$$\Omega$cm 정도의 낮은 비저항 값을 나타냈으며 이것은 기존의 sputtering 법에 의해 증착된 Ru 박막의 비저항 값들과 비교될만하다. 한편, 높은 온도, 높은 산소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.

• Applied Chemistry for Engineering
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• v.31 no.2
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• pp.200-207
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• 2020

In this study, the effect of calcination temperature on the production of RuTi catalyst in NH₃-SCO (selective catalytic oxidation) was investigated. The RuTi catalyst was prepared using the wet impregnation method, and calcined at 400~600 ℃ for 4 h in air condition. The catalysts were named RuTi x00 where x00 means the calcination temperature. According to XRD (X-Ray diffraction), TEM (transmission electron microscope), H₂-TPR (H₂-temperature programmed reduction) analyses, RuTi x00 catalysts displayed that the dispersion of active metal decreased via increasing the calcination temperature. The catalysts with low dispersion showed a decrease in the surface adsorption oxygen species (O_β) and NH₃ adsorption amount via XPS, and NH₃-TPD analyses. Therefore, the RuTi 400 catalyst was well dispersed in the active metal on TiO₂ surface, and also, the NH₃ removal efficiency was excellent.

• Analytical Science and Technology
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• v.11 no.5
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• pp.347-352
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• 1998

A study was carried out on the elelctrochemical characteristics of chemically modified electrodes (CMEs) by cyclic voltammetry. Fabrication of CMEs was made by coating with mixed valence (mv) inorganic-metal polymeric films on the glassy carbon electrode surface by potential cycling. Anodic oxidation behavior of methanol and L-ascorbic acid was studied by using CMEs working electrode. Deposition of films such as mv ruthenium oxo/ruthenium cyanide film (mv Ru-O/CN-Ru), mv ruthenium oxo/ferrocyanide film (mv Ru-O/$Fe(CN)_6$), and mv ruthenium oxo/ruthenium cyanide/Rhodium film (mv Ru-O/CN-Ru/Rh) was obtained to coat by scan rate of 50 mV/sec within the specified potential range (-0.5V ~ +1.2V). Film thickness was controlled by the repeat of the potential cycling. Anodic oxidation behavior of methanol was as follow. Calibration graph by using mv Ru-O/CN-Ru film showed linearly from 10 mM to 80 mM MeOH with slope factor of $-7.552{\mu}A/cm^2$. Although slope factor by using mv Ru-O/$Fe(CN)_6$ film was $-5.13{\mu}A/cm^2$, yet linear range of calibration graph could be extended from 10 mM to 100 mM MeOH. Anodic oxidation behavior of L-ascorbic acid was studied by mv Ru-O/CN-Ru film on the glassy carbon electrode and the glassy carbon electrode with Rh film, Glassy carbon electrode modified with Ru polymeric film was showed better sensitivity than the Rh-glassy carbon modified electrode (mv Ru-O/CN-Ru/Rh). Calibration graph was linear from 0.1 mM to 5 mM L-ascorbic acid by using glassy carbon electrode modified with Ru polymeric film. Solpe factor and relative coefficient are $-84.78{\mu}A/mM$ and 0.998, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1127-1134
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• 2000

$RuO_2$ thin films are prepared by RP magnetron reactive sputtering and their characteristics of crystalliBation,microstructure, surface roughness and resistivity are studied with various O2/(Ar+O2)ratios and substrate temperatures. As O2/(Ar+O2) ratio decreases and substrate temperature increases, the preferred growing plane of$RuO_2$ thin films are changed from (110) to (101) plane. With increase of the 021(Ar+O2) ratio from 2075 to 50%, the surface roughness and the resistivity of $RuO_2$ thin films increase from 2.38nm to 7.81nm, and from $103.6 \mu\Omega-cm\; to \; 227 \mu\Omega-cm$, respectively, but the deposition rate decreases from 47nm/min to 17nm/min. On the other hand, as the substrate temperature increases from room temperature to$500^{\circ}C$, resistivity decreases from $210.5 \mu\Omega-cm\; to \; 93.7\mu\Omega-cm$. $RuO_2$ thin film deposited at $300^{\circ}C$ shows a excellent surface roughness of 2.38 m. As the annealing temperature increases in the range between $400^{\circ}C$ and $650^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of 02/(Ar+O2) ratio and $300^{\circ}C$ of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well qualified for bottom electrode for ferroelectric thin films.