• Journal of Advanced Marine Engineering and Technology
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• v.37 no.5
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• pp.453-460
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• 2013

The surface roughness and heat transfer enhancement devices are known to increase the performance of a flat plate soar collector. This study includes the experiments on the effect of the several heat transfer enhancement devices inserted in duct to simulate the flat-plate solar collector. Experiment was basically at a constant heat flux on the upper duct wall. Inserted heat transfer enhancement devices are Chamfered rib $10^{\circ}$, Chamfered rib $20^{\circ}$, Rib & Groove and Rib & Dimple. Reynolds number is in the range of 2,300 to 22,000 which corresponds to turbulent regime. With the heat transfer enhancement devices, heat transfer would increase by the secondary flow and the increase of the heat transfer area. Pressure drop also increases with the insertion of the enhancement devices. Rib & Dimple model is the best in heat transfer enhancement, however, Chamfered rib $10^{\circ}$ model is the lowest in the pressure drop. Considering the heat transfer enhancement simultaneously with low pressure drop increase, performance factor was the best for the Chamfered rib $10^{\circ}$.

• The Journal of Engineering Geology
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• v.12 no.2
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• pp.215-234
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• 2002

Groundwater Dam is one of the reliable techniques to get huge amount of groundwater abstraction for municipal, agricultural, drinking, industrial water supply system. It can be a major technique to solve water shortage problems when it based on the sufficient watershed, proper topology, and adequate aquifer distribution and pollution control, Groundwater Dam had initiated its construction by RDC(former KARICO) in early eighties in Korea and 4 of it in total were added more until late eighty. However, this technique has shrunken its application due to gradually decreased yield rate after sever years of construction. After we studied several existing sites precisely, we concluded that the main reason of decreasing yield rate was come form engineering roughness on construction in early nineties. Theoretically, the technique itself seemed to be little detectives however, there were a little application in the fields in Korea. With the recent advance in engineering fields, those defects in construction would be no longer obstacle to construct underground wall and the technique could be a one of major ground water production technique in the future. It is essential to study following items thoroughly before select the appropriate site. The topography and the site of the underground wall, aquifer distribution, the specific technique for wall construction to block groundwater flow effectively and strict quality control during construction are critical. The surface and ground water monitoring data should be collected. Sustainability of the Groundwater Dam with huge groundwater abstraction in long term should be based on the long-term water balance analysis for each site. The water quality, environmental effect analysis and maintenance achedule should be also analyzed and planned in prior. It is suggested that the two consecutive underground wall in the coastal area to prevent seawater intrusion beneath a single wall.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1056-1063
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• 2006

Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1069-1074
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• 2022

In this study, we prepared ITO thin films on the Nb₂O₅/SiO₂ double buffer layer and investigated electrical and optical properties according to the change of SiO₂ buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb₂O₅/SiO₂ double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b^*) of the ITO thin film deposited on the Nb₂O₅(10nm)/SiO₂(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb₂O₅/SiO₂ double buffer layer.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.218-222
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• 2000

W-Ti film properties for X-ray absorber applications have been investigated with Ti composition have been investigated with Ti composition variation. W-Ti films were deposited by DC magnetron sputtering system. As the working pressure increases, film density decreases and film stress changes from compressive to tensile. The transition pressure (where the film stress in zero) and the stress gradient decrease by adding Ti into W-Ti(6.5 at.%) film shows the smallest stress gradient and transition pressure. It also shows high density ($17.7g/\textrm{cm}^3$) similar to that of pure-W ($17.8g/\textrm{cm}^3$) at the transition pressure. All the films show columnar structure, and its size decreases with increasing Ti composition. Surface roughness and thermal stability are improved by Ti-addition, resulting in a better property for X-ray absorber applications.

• Polymer(Korea)
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• v.25 no.3
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• pp.399-405
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• 2001

Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]s were synthesized in 2:1, 1:1, and 1:2 mole ratios, and organic electroluminescent devices were fabricated using the copolymers. The opto-electrical properties of the copolymers were studied by PL, EL spectra, I-V, and V-L curves of the organic electroluminescent devices in conjunction with the energy band diagrams which were obtained from the cyclic voltammogram and the electronic absorption spectra. The LUMO energy level of P(OT/FPT)(1:1) is the lowest as -3.35 eV. In the copolymers P(OT/FPT)(2:1) and P(OT/FPT)(1:1) the ${\lambada}_{max}$ in the PL and EL spectra red-shifted as the mole ratio of fluorophenyl group increased while in P(OT/FPT)(1:2) it showed a blue-shift. This indicates that the backbone chain is twisted due to the steric hinderance of the fluorophenyl group leading to shorter ${\pi}$-conjugation length. P(OT/FPT)(1:1) showed the highest EL intensity and the highest power efficiency among the three copolymers. In P(OT/FPT)(1:2) the roughness of the film surface causes unusually high local leakage current leading to the low efficiency of electroluminescence.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.653-659
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• 2017

In this study, the complex forging process of an outer support ring was developed and the prototype was manufactured. The current process, hot forging and MCT machining, has a disadvantage of excessive material removal rates and longer machining hours. To overcome this disadvantage, a general shape is given through hot forging and the precision is achieved through cold forging. The complex forging process was developed with the minimal machining process. Forging analysis was carried out to design a forging process using the commercial program, Deform-3D. The hot and cold forging processes were set up based on the analyzed result. The mold and prototype were manufactured. Hardness, surface roughness, internal defect, the grain low line of the prototype were evaluated. The results showed no particular problems, and there were no problems in mass production. Using complex forging, the material was reduced by approximately 27 % compared to the process using hot forging and MCT machining. In addition, the production speed was improved 2.15 fold compared to that of hot forging and MCT machining. Through this study, a cost-effective process and mold design technology were established, which is expected to have positive effects on other related automotive parts production.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.33 no.4
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• pp.1665-1673
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• 2013

Recently, the interest and demand on free formed structure providing aesthetic value as well as functionality has been increasing. Formwork has numerous advantages such as high strength, convenience, accuracy and good quality of surface roughness. Nevertheless, it increases construction cost and period to build complex shapes. For these purpose, deposition construction systems such as Contour Crafting and Concrete Printing have been developed with active collaboration between university and industry by applying the rapid prototyping technology to the construction industry in USA and England. Since there has been no related research in Korea, the possibility of spin-off technology and its fusion cannot be expected. In this paper, design elements including mechanical system and control system related to automatic deposition construction system prototype for constructing a free curved structure without mold are described. As for an appropriate material for the system, fiber reinforced mortar was selected by experiments on compressive strength, fluidity, viscosity and setting time. By performing transfer and extrusion experiments, the possibility of the development of deposition construction system was demonstrated. Based on this research results, it is required to keep the automatic deposition construction system improve and extend it into the new application area in construction industry.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.1
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• pp.25-32
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• 2007

We investigated the silicide reaction stability between 10 nm-Col-xNix alloy films and silicon substrates with the existence of 4 nm-thick natural oxide layers. We thermally evaporated 10 nm-Col-xNix alloy films by varying $x=0.1{\sim}0.9$ on naturally oxidized single crystal and 70 nm-thick polycrystalline silicon substrates. The films structures were annealed by rapid thermal annealing (RTA) from $600^{\circ}C$ to $1100^{\circ}C$ for 40 seconds with the purpose of silicidation. After the removal of residual metallic residue with sulfuric acid, the sheet resistance, microstructure, composition, and surface roughness were investigated using a four-point probe, a field emission scanning electron microscope, a field ion bean4 an X-ray diffractometer, and an Auger electron depth profiling spectroscope, respectively, to confirm the silicide reaction. The residual stress of silicon substrate was also analyzed using a micro-Raman spectrometer We report that the silicide reaction does not occur if natural oxides are present. Metallic oxide residues may be present on a polysilicon substrate at high silicidation temperatures. Huge residual stress is possible on a single crystal silicon substrate at high temperature, and these may result in micro-pinholes. Our results imply that the natural oxide layer removal process is of importance to ensure the successful completion of the silicide process with CoNi alloy films.