• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.286-300
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• 2016

Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.122-126
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• 2013

The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

• The Journal of Korean Academy of Prosthodontics
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• v.36 no.3
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• pp.506-513
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• 1998

This study was designed to compare the smoothness by glazing method with that by polishing method after 48 specimens of Ceramco II block, one of porcelain materials used for PFM, were baked according to the manufacturer's directions. The specimens were roughened with new green stone at 15,000rpm for 30 seconds and sandblasted with $25{\mu}$aluminum oxide for 15 seconds. They were divided into 4 groups at random, and 4 groups were prepared as follows : Group I : specimens were autoglazed and overpolished with polishing system. Group II : specimens were polished with only polishing system. Group III : specimens were glazed after adding glazing liquid, vitachrom 'L'-fluid (vita zahnfabrik co. Germany) to the rough surface Group V : specimens were just autoglazed Using the surface roughness tester, Ra, Rmax. and Rz were estimated 5 times per specimen, and recording process of mean value was repeated 3 times. The results were as follows : 1. The Ra of group I and group II was lower than group III and group IV (p<001). 2. There was lower value of Rz in group I and group II than group III and group IV (p<001). 3. The Rmax of group I (overpolished with polishing system after autoglazing) and group II (polished with only polishing system) was lower than group III (glazed after adding glazing liquid) and group IV (autoglazed) (p<001). 4. There was not a statistically significant difference between group I and II and between group III and IV (p>001). 5. The roughness was increase in order of group I, II, III, IV in SEM

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.1
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• pp.69-74
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• 2015

Cadmium telluride (CdTe) is being developed for thin film of the X-Ray detector recently. But a rough surface of the CdTe should be improved for resolution and signal speed. This paper shows the study on the improvement of surface roughness and removal rate by applying Chemical Mechanical Polishing. The conventional potassium hydroxide (KOH) based colloidal silica slurry could not realize a mirror surface without physical defects, resulting in low material removal rate and many scratches on surface. In order to enhance chemical reaction such as form oxidized layer on the surface of cadmium telluride, we used hydrogen peroxide ($H_2O_2$) as an oxidizer. Consequently, in case of 3 wt% concentration of hydrogen peroxide, the highest MRR (938 nm/min) and the lowest surface roughness ($R_{p-v}=10.69nm$, $R_a=0.8nm$) could be obtained. EDS was also used to confirm the generated oxide of cadmium telluride surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.39-42
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• 2002

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity(WIWNU) were measured as a function of different slurry composition. As a experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt% contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows In the first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saving of high costs of slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.759-764
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• 2003

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of roused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity (WIWNU) wore measured as a function of different slurry composition. As an experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt％ contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows , In tile first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saying of high costs of slurry.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1227-1230
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• 2003

A roughing process is one of the most important and indispensable shoe manufacturing processes of various types of shoes. This basic process to rough the upper of the shoe is studied to improve the productivity and to reduce the processing time. In this study, the CAM system for shoe roughing is developed. The B-spline surface generated by the developed CAM system ignores the small inclinations of the real roughing surface because the developed roughing tool has potential to rough the roughing surface of the shoe properly. The roughing tool roughs the roughing surface using its side along the generated tool paths. The generated NC codes were applied to 5-axis polishing machine for the test. Experimental results show good evaluation result. The upper of the shoe is roughed properly along the roughing path line and the roughing surface was good to cement the outsole of the shoe.

• The Journal of Advanced Prosthodontics
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• v.10 no.4
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• pp.315-320
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• 2018

PURPOSE. Fractures, occlusal adjustments, or marginal corrections after removing excess composite cements result in rough surfaces of all-ceramic FPDs. These have to be polished to prevent damage of the surrounding tissues. The aim of this study was to evaluate the roughness of zirconia, silicate-ceramic, and composite after polish with different systems for intraoral use. MATERIALS AND METHODS. Each set of 50 plates was made of zirconia, silicate-ceramic, and composite. All plates were ground automatically and were divided into 15 groups according to the treatment. Groups Zgrit, Sgrit, and Cgrit received no further treatment. Groups Zlab and Slab received glaze-baking, and group Clab was polished with a polishing device. In the experimental groups Zv, Sv, Cv, Zk, Sk, Ck, Zb, Sb, and Cb, the specimens were polished with ceramic-polishing systems "v", "k", and "b" for intraoral use. Roughness was measured using profilometry. Statistical analysis was performed with ANOVA and $Scheff{\acute{e}}$-procedure with the level of significance set at P=.05. RESULTS. All systems reduced the roughness of zirconia, but the differences from the controls Zgrit and Zlab were not statistically significant (P>.907). Roughness of silicate ceramic was reduced only in group Sv, but it did not differ significantly from both controls (P>.580). Groups Cv, Ck, and Cb had a significantly rougher surface than that of group Clab (P<.003). CONCLUSION. Ceramic materials can be polished with the tested systems. Polishing of interface areas between ceramic and composite material should be performed with polishing systems for zirconia first, followed by systems for veneering materials and for composite materials.